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  ON Semiconductor Electronic Components Datasheet  


24N06

NTD24N06



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24N06 pdf
NTD24N06
Power MOSFET
60 Volt, 24 Amp
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C, TJ = 150°C
− Continuous @ TA = 25°C, TJ = 175°C
− Continuous @ TA = 100°C, TJ = 175°C
− Single Pulse (tpv10 ms), TJ = 175°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"30
24
27
19
80
62.5
0.42
1.88
1.36
−55 to
+175
Vdc
Vdc
Vdc
Adc
Adc
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 18 A, VDS = 60 Vdc)
EAS 162 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
2.4
80
110
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
32 mW
ID MAX
24 A
N−Channel
D
G
S
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
4
1
Gate
2
Drain
3
Source
4
Drain
1
2
3
DPAK
CASE 369D
(Straight Lead)
STYLE 2
12 3
Gate Drain Source
Y
WW
24N06
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTD24N06/D
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24N06 pdf
NTD24N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 10 Vdc, ID = 12 Adc)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 24 Adc)
(VGS = 10 Vdc, ID = 12 Adc, TJ = 150°C)
Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 12 Adc)
DYNAMIC CHARACTERISTICS
RDS(on)
VDS(on)
gFS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VDD = 30 Vdc, ID = 24 Adc,
VGS = 10 Vdc,
RG = 9.1 W) (Note 3)
(VDS = 48 Vdc, ID = 24 Adc,
VGS = 10 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
QT
Q1
Q2
Forward On−Voltage
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 24 Adc, VGS = 0 Vdc)
(IS = 24 Adc, VGS = 0 Vdc, TJ = 150°C)
(IS = 24 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
VSD
trr
ta
tb
QRR
Min Typ Max Unit
60 71.1
− 70.4
Vdc
− mV/°C
mAdc
− − 1.0
− − 10
±100
nAdc
Vdc
2.0 3.03 4.0
− 7.0 − mV/°C
mW
− 32 42
− 32 −
Vdc
− 0.8 1.15
− 0.8 −
− 0.7 −
− 15 − mhos
846 1200
pF
− 252 350
− 68 95
− 10 20
− 24 50
− 25 50
− 27 60
− 24 48
− 5.0 −
− 11.5 −
ns
nC
0.95 1.15
Vdc
− 1.0 −
− 0.89 −
− 49 −
ns
− 35 −
− 13 −
− 0.096 −
mC
ORDERING INFORMATION
Device
Package
Shipping
NTD24N06
DPAK
75 Units / Rail
NTD24N06G
DPAK
(Pb−Free)
75 Units / Rail
NTD2406−1
DPAK (Straight Lead)
75 Units / Rail
NTD2406−1G
DPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
NTD24N06T4
DPAK
2500 Tape & Reel
NTD24N06T4G
DPAK
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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Part Number 24N06
Description NTD24N06
Maker ON Semiconductor - ON Semiconductor
Total Page 8 Pages
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