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20N50E

MTW20N50E



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20N50E pdf
MTW20N50E
Preferred Device
Power MOSFET
20 Amps, 500 Volts
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp 10 ms)
Drain Current – Continuous
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
500
500
± 20
± 40
20
14.1
60
250
2.0
Operating and Storage Temperature Range TJ, Tstg –55 to
150
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 10 mH, RG = 25 )
Thermal Resistance – Junction to Case
Thermal Resistance – Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RθJC
RθJA
TL
2000
0.50
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
20 AMPERES
500 VOLTS
RDS(on) = 240 m
N–Channel
D
G
1
23
S
4
TO–247AE
CASE 340K
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTW20N50E
LLYWW
1
Gate
3
Source
2
Drain
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTW20N50E
TO–247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 5
1
Publication Order Number:
MTW20N50E/D



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20N50E pdf
MTW20N50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
500
583
– Vdc
– mV/°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
µAdc
– – 10
– – 100
IGSS – – 100 nAdc
VGS(th)
2.0 3.0 4.0 Vdc
– 7.0 – mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 10 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 250 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 )
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
– 0.20 0.24 Ohm
Vdc
– 5.75 6.0
– – 6.0
11 16.2
– mhos
3880 6950
pF
– 452 920
– 96 140
– 29 55 ns
– 90 165
– 97 190
– 84 170
– 100 132 nC
– 20 –
– 44 –
– 36 –
Vdc
0.916
1.1
– 0.81 –
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
– 431 –
– 272 –
– 159 –
– 6.67 –
ns
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
LD – 5.0 – nH
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
LS
– 13 – nH
http://onsemi.com
2



Part Number 20N50E
Description MTW20N50E
Maker ON Semiconductor - ON Semiconductor
Total Page 8 Pages
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