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SANGDEST MICROELECTRONICS
SANGDEST MICROELECTRONICS


203DMQ080

SCHOTTKY RECTIFIER



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203DMQ080 pdf
SANGDEST
MICROELECTRONICS
203DMQ SERIES
Technical Data
Data Sheet N1677, Rev. -
203DMQ080/100 SCHOTTKY RECTIFIER
Applications:
High current switching power supply Plating power supply Free-Wheeling diodes
Reverse battery protection Converters UPS System Welding
Features:
175TJ operation
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Product contain Pb
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/Inches
Please Note: Suffix “R” Denotes For Reversed Polarity
PRM4 (Isolated)
MARKING,MOLDING RESIN
Marking for 203DMQ080/100, 1st row SS YYWWL, 2nd row 203DMQ080/100
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn



No Preview Available !

203DMQ080 pdf
SANGDEST
MICROELECTRONICS
203DMQ SERIES
Technical Data
Data Sheet N1677, Rev. -
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy(peg leg)
Repetitive Avalanche
Current(peg leg)
Symbol
VRWM
Condition
-
IF(AV)
50% duty cycle @TC =110°C,
rectangular wave form
Max.
80 203DMQ080
100 203DMQ100
100 per leg
200 per device
IFSM 8.3 ms, half Sine pulse
EAS TJ=25,IAS=1A,L=30mH
IAR Current decaying linearly to zero
in 1 μsec Frequency limited by
TJ max. VA=1.5×VR typical
2520
15
1
Units
V
A
A
mJ
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Symbol
VF1
VF2
Reverse Current (per leg) *
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Voltage Rate of Change
Insulation Voltage
* Pulse Width < 300µs, Duty Cycle <2%
IR1
IR2
CT
LS
dv/dt
VRMS
Thermal-Mechanical Specifications:
Condition
@ 100A, Pulse, TJ = 25 °C
@ 200A, Pulse, TJ = 25 °C
@ 100A, Pulse, TJ = 125 °C
@ 200A, Pulse, TJ = 125 °C
@VR = rated VR TJ = 25 °C
@VR = rated VR TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
-
Max.
0.86
1.03
0.70
0.84
3
40
2650
7.0
10,000
1000
Units
V
V
mA
mA
pF
nH
V/μs
V
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Maximum Thermal
Resistance Junction to Case
(per package)
Typical Thermal Resistance,
case to Heat Sink
Mounting Torque
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
Condition
-
-
DC operation
Specification
-55 to +175
-55 to +175
0.70
Units
°C
°C
°C/W
RθJC
DC operation
0.35
°C/W
Rθcs Mounting surface, smooth
and greased
0.10
°C/W
Mounting 24(min)
TM
-
Torque
Terminal
35(max)
35(min)
Kg-cm
Torque 46(max)
wt -
79 g
PRM4 Isolated
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn



Part Number 203DMQ080
Description SCHOTTKY RECTIFIER
Maker SANGDEST MICROELECTRONICS - SANGDEST MICROELECTRONICS
Total Page 4 Pages
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