Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Electrical Characteristics (TJ=25°C unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Min Typ Max Units
41 50 mΩ
52 63 mΩ
gFS Forward Transconductance
VSD Diode Forward Voltage
IS Maximum Body-Diode Continuous Current
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=4.2A
Qgd Gate Drain Charge
Turn-On Rise Time
VGS=5V, VDS=10V, RL=2.7Ω,
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev4 : June 2005