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STMicroelectronics Electronic Components Datasheet


2001HI

ST2001HI



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2001HI pdf
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® ST2001HI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s NEW SERIES, ENHANCHED
PERFORMANCE
s FULLY INSULATED PACKAGE FOR EASY
MOUNTING
s HIGH VOLTAGE CAPABILITY
s HIGH SWITCHING SPEED
s TIGTHER hfe CONTROL
s IMPROVED RUGGEDNESS
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOR
TV AND MONITOR
DESCRIPTION
The ST2001HI is manufactured using Diffused
Collector technology for more stable operation
Vs base drive circuit variations resulting in very
low worst case dissipation.
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emit ter Volt age (IB = 0)
VEBO Emitt er-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current (tp < 5 ms)
IB Base Current
Ptot Total Dissipation at Tc = 25 oC
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
November 1999
Value
1500
600
7
10
20
7
55
-65 to 150
150
Uni t
V
V
V
A
A
A
W
oC
oC
1/6



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ST2001HI
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
2.3 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V Tj = 125 oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus )Collector-Emit ter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 7 V
IC = 100 mA
IC = 5 A
L = 25 mH
IB = 1.25 A
VBE(s at)Base-Emitt er
Saturation Voltage
IC = 5 A
IB = 1.25 A
hF EDC Current Gain
IC = 6 A
VCE = 5 V
INDUCTIVE LO AD
IC = 5 A
ts Storage Time
tf Fall Time
LB = 1 µH
f = 64 KHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IBon (END) =1 A
VBB = -2.5 V
Min. Typ.
600
5
2.5
0.3
Max.
1
2
1
1.5
1.2
10
3.5
0.45
Unit
mA
mA
mA
V
V
V
µs
µs
Safe Operating Area
Thermal Impedance
2/6



Part Number 2001HI
Description ST2001HI
Maker ST Microelectronics - ST Microelectronics
Total Page 6 Pages
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