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Toshiba Electronic Components Datasheet



015AZ11

Silicon Epitaxial Planar Type Diode



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015AZ11 pdf
015AZ2.0~015AZ12
TOSHIBA Diode Silicon Epitaxial Planar Type
015AZ2.0~015AZ12
Constant Voltage Regulation Applications
Unit: mm
l Small package
l Nominal voltage tolerance about ±2.5%
(2.0V~12V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Power dissipation
P* 150
Junction temperature
Tj 125
Storage temperature range
Tstg -55~125
* Mounted on a glass epoxy circuit board of 20 × 20mm,
Pad dimension of 4 × 4mm.
Unit
mW
°C
°C
Electrical Characteristics
(See Page 2~3)
JEDEC
JEITA
TOSHIBA
Weight: 1.4 mg
1-1G1A
Marking
Example 1: 015AZ12-×
Example 2: 015AZ12-×
Pin Assignment (top view)
1 2001-10-30



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015AZ11 pdf
015AZ2.0~015AZ12
Electrical Characteristics (Ta = 25°C)
Zener
Voltage
Dynamic
Impedance
Knee Dynamic
Impedance
Reverse
Current
Type No.
* VZ (V)
Min Max
IZ
(mA)
ZZ()
Max
015AZ2.0 **
X
Z
015AZ2.2 **
X
Z
015AZ2.4
X
Z
015AZ2.7
X
Z
015AZ3.0
X
Z
015AZ3.3
X
Z
015AZ3.6
X
Z
015AZ3.9
X
Z
X
015AZ4.3
Y
Z
X
015AZ4.7
Y
Z
X
015AZ5.1
Y
Z
X
015AZ5.6
Y
Z
X
015AZ6.2
Y
Z
X
015AZ6.8
Y
Z
* : Test time: t = 30ms
** : Product by order.
1.85
1.95
2.05
2.16
2.28
2.40
2.50
2.65
2.80
2.95
3.10
3.25
3.40
3.55
3.70
3.87
4.00
4.13
4.25
4.40
4.53
4.66
4.80
4.97
5.14
5.30
5.43
5.61
5.80
6.00
6.19
6.40
6.60
6.82
2.05
2.15
2.26
2.38
2.50
2.60
2.75
2.90
3.05
3.20
3.35
3.50
3.65
3.80
3.97
4.10
4.23
4.35
4.50
4.63
4.76
4.90
5.07
5.24
5.40
5.63
5.81
6.00
6.20
6.39
6.60
6.80
7.02
7.20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100
100
100
110
120
130
130
130
130
120
70
40
30
25
IZ
(mA)
ZZK()
Max
IZ
(mA)
IR (mA)
Max
5
1000
0.5
120
5
1000
0.5
120
5
1000
0.5
120
5
1000
0.5
120
5
1000
0.5
50
5
1000
0.5
20
5
1000
0.5
10
5
1000
0.5
10
5
1000
0.5
5
5
1000
0.5
5
5
1000
0.5
1
5 900 0.5 1
5 500 0.5 1
5 150 0.5 0.5
VR
(V)
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
5.0
2 2001-10-30



Part Number 015AZ11
Description Silicon Epitaxial Planar Type Diode
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 6 Pages
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015AZ11 pdf
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