http://www.Datasheet4U.com


H11F3 Datasheet
PHOTO FET OPTOCOUPLERS

No Preview Available !

H11F3 pdf
Download PDF File

PHOTO FET OPTOCOUPLERS
PACKAGE
H11F1 H11F2 H11F3
SCHEMATIC
66
1
1
ANODE 1
CATHODE 2
3
6
OUTPUT
TERM.
5
4
OUTPUT
TERM.
6
1
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-
detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
100to 300 M
99.9% linearity
15 pF shunt capacitance
100 GI/O isolation resistance
As an analog switch
• Extremely low offset voltage
• 60 Vpk-pk signal capability
• No charge injection or latch-up
• ton, toff 15 µS
• UL recognized (File #E90700)
• VDE recognized (File #E94766)
– Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor –
• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band switching
As an analog switch –
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion
© 2002 Fairchild Semiconductor Corporation
Page 1 of 9
6/24/02


H11F3 Datasheet
PHOTO FET OPTOCOUPLERS

No Preview Available !

H11F3 pdf
Download PDF File

PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Absolute Maximum Ratings (TA = 25°C unless otherwise specied)
Parameter
Symbol
Device
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (10 µs pulse, 1% duty cycle)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation @ 25°C
Derate linearly from 25°C
Breakdown Voltage (either polarity)
Continuous Detector Current (either polarity)
TSTG
TOPR
TSOL
IF
VR
IF(pk)
PD
PD
BV4-6
I4-6
All
All
All
All
All
All
All
All
H11F1, H11F2
H11F3
All
Value
Units
-55 to +150
-55 to +100
260 for 10 sec
°C
°C
°C
60 mA
5V
1A
100 mW
1.33 mW/°C
300
4.0
±30
±15
±100
mW
mW/°C
V
V
mA
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specied.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
Capacitance
OUTPUT DETECTOR
Breakdown Voltage
Either Polarity
Off-State Dark Current
Off-State Resistance
Capacitance
Test Conditions
IF = 16 mA
VR = 5 V
V = 0 V, f = 1.0 MHz
I4-6 = 10µA, IF = 0
V4-6 = 15 V, IF = 0
V4-6 = 15 V, IF = 0, TA = 100°C
V4-6 = 15 V, IF = 0
V4-6 = 15 V, IF = 0, f = 1MHz
Symbol
Device
VF
IR
CJ
BV4-6
I4-6
R4-6
C4-6
All
All
All
H11F1, H11F2
H11F3
All
All
All
All
Min Typ* Max Unit
1.3 1.75 V
10 µA
50 pF
30
V
15
50 nA
50 µA
300 M
15 pF
© 2002 Fairchild Semiconductor Corporation
Page 2 of 9
6/24/02


H11F3 Datasheet
PHOTO FET OPTOCOUPLERS

No Preview Available !

H11F3 pdf
Download PDF File

PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
ISOLATION CHARACTERISTICS
Parameter
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 min.
VI-O = 500 VDC
VI-O = 0, f = 1.0 MHz
Symbol
VISO
RISO
CISO
Min
5300
1011
Typ*
Max Units
Vac (rms)
2 pF
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specied.)
DC Characteristics
Test Conditions
Symbol
Device
On-State Resistance
IF = 16 mA, I4-6 = 100 µA
R4-6
On-State Resistance
Resistance, non-linearity
and assymetry
IF = 16 mA, I6-4 = 100 µA
IF = 16mA, I4-6 = 25 µA RMS,
f = 1kHz
R6-4
H11F1
H11F2
H11F3
H11F1
H11F2
H11F3
All
AC Characteristics
Turn-On Time
Turn-Off Time
Test Conditions
RL = 50, IF = 16mA, V4-6 = 5V
RL = 50, IF = 16mA, V4-6 = 5V
Symbol
ton
toff
Device
All
All
Min Typ* Max Units
200
330
470
200
330
470
0.1 %
Min Typ* Max Units
25 µS
25 µS
© 2002 Fairchild Semiconductor Corporation
Page 3 of 9
6/24/02


H11F3 Datasheet
PHOTO FET OPTOCOUPLERS

No Preview Available !

H11F3 pdf
Download PDF File

PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Figure 1. Resistance vs. Input Current
10
1
Normalized to:
IF = 16 mA
I46 = 5 µA RMS
0.1
1
10
IF - INPUT CURRENT - mA
100
Figure 3. LED Forward Voltage vs. Forward Current
2.0
1.8
1.6
Figure 2. Output Characteristics
800
600
400
200
0
-200
-400
-600
-800
IF = 2mA
IF = 6mA
IF = 10mA
IF = 14mA
IF = 18mA
IF = 18mA
IF = 14mA
IF = 10mA
IF = 6mA
IF = 2mA
-0.2 -0.1 0.0 0.1 0.2
V46 - OUTPUT VOLTAGE (V)
Figure 4. Off-state Current vs. Ambient Temperature
10000
1000
NORMALIZED TO:
V46 = 15V
IF = 0mA
TA = 25°C
1.4 TA = -55°C
TA = 25°C
1.2
1.0
0.8
0.1
3
2
TA = 100°C
1 10
IF - LED FORWARD CURRENT - mA
100
Figure 5. Resistance vs. Temperature
NORMALIZED TO
IF = 16mA
I4-6 = 25µA RMS
TA = 25˚C
100
10
1
0 20 40 60 80 100
TA - AMBIENT TEMPERATURE (°C)
Figure 6. Region of Linear Resistance
100
80
MAXIMUM
60 RMS
VOLTAGE
40
100
80
60
40
Observed
Range
1K
1
0.8
0.6
MDeedviaicne
20
10
8
6 MAXIMUM
RMS
4 CURRENT
2
20
10
8
6
4
2
0.4
-50
-25 0 25 50 75
TA - AMBIENT TEMPERATURE - °C
100
1
100 1000 10K 100K
r(on) RESISTANCE -
© 2002 Fairchild Semiconductor Corporation
Page 4 of 9
6/24/02


H11F3 Datasheet
PHOTO FET OPTOCOUPLERS

No Preview Available !

H11F3 pdf
Download PDF File

PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Figure 7. Resistive non-linearity vs. D.C. Bias
5
4
3
2
I4-6 = 10 µA RMS
r(on) = 200
1
0
1 50 100 150 200 250 300 350
V4-6 - D.C. BIAS VOLTAGE - mA
© 2002 Fairchild Semiconductor Corporation
Page 5 of 9
6/24/02



Buy Electronic Components

H11F3 datasheets pdf
Total : 9 Pages
Download Full PDF File