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PSMN3R4-30PL Datasheet
MOSFET

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PSMN3R4-30PL
N-channel 30 V 3.4 mlogic level MOSFET
Rev. 01 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Min Typ Max Unit
- - 30 V
[1] - - 100 A
Ptot
total power
Tmb = 25 °C; see Figure 2 - - 114 W
dissipation
Tj junction temperature
Static characteristics
-55 -
175 °C
RDSon
drain-source on-state VGS = 4.5 V; ID = 10 A;
resistance
Tj = 25 °C; see Figure 13
VGS = 10 V; ID = 10 A;
Tj = 25 °C; see Figure 13
Dynamic characteristics
-
[2] -
3.5 4.1 m
2.8 3.4 m
QGD
QG(tot)
gate-drain charge VGS = 4.5 V; ID = 25 A;
- 8 - nC
total gate charge
VDS = 15 V; see Figure 14;
-
31 -
nC
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; - - 200 mJ
drain-source
ID = 100 A; Vsup 30 V;
avalanche energy RGS = 50 ; unclamped

PSMN3R4-30PL datasheets pdf
Total : 15 Pages
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