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40EPS08PBF Datasheet
Input Rectifier Diode

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40EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 40 A
Base
cathode
2
TO-247AC modified
1
Cathode
3
Anode
PRODUCT SUMMARY
VF at 40 A
IFSM
VRRM
1.1 V
475 A
800/1200 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Sinusoidal waveform
Range
VF 40 A, TJ = 25 °C
TJ
DESCRIPTION/FEATURES
The 40EPS..PbF rectifier High Voltage Series has
been optimized for very low forward voltage drop, Pb-free
with moderate leakage. The glass passivation Available
technology
used
has
reliable
operation
up
to
RoHS*
COMPLIANT
150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
Switches and output rectifiers which are available in identical
package outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free.
VALUES
40
800/1200
475
1.1
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
40EPS08PbF
40EPS12PbF
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
IRRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
IF(AV)
IFSM
TC = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t 10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t t = 0.1 to 10 ms, no voltage reapplied
VALUES
40
400
475
800
1131
11 310
UNITS
A
A2s
A2s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94343
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1


40EPS08PBF Datasheet
Input Rectifier Diode

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40EPS..PbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
Threshold voltage
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
20 A, TJ = 25 °C
40 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.0
1.1
7.16
0.74
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storrage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC modified (JEDEC)
VALUES
- 40 to 150
UNITS
°C
0.6
40 °C/W
0.2
6g
0.21 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
40EPS08
40EPS12
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94343
Revision: 06-Jun-08


40EPS08PBF Datasheet
Input Rectifier Diode

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40EPS08PBF pdf
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40EPS..PbF High Voltage Series
Input Rectifier Diode, 40 A Vishay High Power Products
150
145
140
135
130
125
120
115
110
105
100
95
0
40EPS.. Series
RthJC (DC) = 0.6 K/W
Ø
Conduction angle
30° 60°
90°
120°
180°
5 10 15 20 25 30 35 40 45
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
40EPS.. Series
RthJC (DC) = 0.6 K/W
140
130 Ø
Conduction period
120
110
100
0
30°
60°
90°
120°
180°
DC
10 20 30 40 50 60
70
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
60
55
50
45
40
35
30
25
20
15
10
5
0
0
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
40EPS.. Series
TJ = 150 °C
5 10 15 20 25 30 35 40
VFM - Forward Voltage Drop (V)
Fig. 3 - Forward Power Loss Characteristics
80
DC
70 180°
120°
60 90°
60°
50 30°
RMS limit
40
30 Ø
Conduction period
20
40EPS.. Series
10 TJ = 150°C
0
0 10 20 30 40 50 60 70
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
1000
100
TJ = 25 °C
10 TJ = 150 °C
40EPS.. Series
1
0 0.5 1.0 1.5 2.0 2.5 3.0
Instantaneous Forward Voltage (V)
Fig. 5 - Forward Voltage Drop Chacteristics
500
Maximum non-repetitive surge current
450 versus pulse train duration.
Initial TJ = 150 °C
400 No voltage reapplied
Rated VRRM reapplied
350
300
250
200
150 40EPS.. Series
100
0.01
0.1
1.0
Pulse Train Duration (S)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94343
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3


40EPS08PBF Datasheet
Input Rectifier Diode

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40EPS..PbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 40 A
1
0.1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value:
(DC operation)
40EPS.. Series
0.01
0.001
0.01 0.1
Square Wave Pulse Duration (s)
Fig. 7 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
1
Device code 40 E P S 12 PbF
1 2 3 456
1 - Current rating (40 = 40 A)
2 - Circuit configuration:
E = Single diode
3 - Package:
P = TO-247AC modified
4 - Type of silicon:
S = Standard recovery rectifier
08 = 800 V
5 - Voltage rating
12 = 1200 V
6 - None = Standard production
PbF = Lead (Pb)-free
Dimensions
Part marking information
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95253
http://www.vishay.com/doc?95255
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94343
Revision: 06-Jun-08


40EPS08PBF Datasheet
Input Rectifier Diode

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40EPS08PBF pdf
Download PDF File

www.vishay.com
DIMENSIONS in millimeters and inches
B
(2) R/2
Q
2xR
(2)
(3)
E
N
S
D
12
3
(5) L1
CL
2 x b2
3xb
2x e
b4
0.10 M C A M
See view B
A
A2
A
D
A
C
A1
Outline Dimensions
Vishay Semiconductors
A
(6) ΦP
Ø KM DBM
D2
(Datum B)
ΦP1
Thermal pad
D1 (4)
4
(4)
E1
View A - A
Planting
(b1, b3, b5)
Base metal
(c) c1
D DE E
CC
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.65 5.31 0.183 0.209
D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102
E
15.29 15.87 0.602 0.625
3
A2 1.50 2.49 0.059 0.098
E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055
e
5.46 BSC
0.215 BSC
b1 0.99 1.35 0.039 0.053
K 2.54
0.010
b2 1.65 2.39 0.065 0.094
L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094
L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135
N 7.62 BSC
0.3
b5 2.59 3.38 0.102 0.133
P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034
P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030
Q 5.31 5.69 0.209 0.224
D
19.71 20.70 0.776 0.815
3
R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 -
4
S
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
1 Document Number: 95253
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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