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K15H50C Datasheet
TK15H50C

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TK15H50C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK15H50C
Switching Regulator Applications
Unit: mm
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Low drainsource ON resistance : RDS (ON) = 0. 33 (typ.)
High forward transfer admittance : |Yfs| = 8.5 S (typ.)
Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, I45D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
15
60
150
765
15
15
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
JEITA
TOSHIBA
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.78 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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1 2006-11-06

K15H50C datasheets pdf
Total : 6 Pages
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