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ZXTP25015DFH Datasheet
PNP medium power transistor

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ZXTP25015DFH
15V, SOT23, PNP medium power transistor
Summary
BVCEO > -15V
BVECO > -3V
IC(cont) = -4A
RCE(sat) = 33m
VCE(sat) < -55mV @ 1A
PD = 1.25W
Complementary part number ZXTN25015DFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
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Features
• High power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 15V forward blocking voltage
• 3V reverse blocking voltage
Applications
• MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• High side driver
• Load disconnect switch
Ordering information
Device
ZXTP25015DFHTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Device marking
1A7
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
1
C
B
E
E
C
B
Pinout - top view
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ZXTP25015DFH Datasheet
PNP medium power transistor

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ZXTP25015DFH pdf
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ZXTP25015DFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current(b)
Base current
Peak pulse current
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(b)
Linear derating factor
Power dissipation at Tamb =25°C(d)
Linear derating factor
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEO
VECO
VEBO
IC
IB
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
-15
-15
-3
-7
-4
Unit
V
V
V
V
A
-1 A
-10 A
0.73 W
5.84 mW/°C
1.05 W
8.4 mW/°C
1.25 W
9.6 mW/°C
1.81 W
14.5
-55 to 150
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
RJA
RJA
RJA
RJA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
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ZXTP25015DFH Datasheet
PNP medium power transistor

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Characteristics
ZXTP25015DFH
Issue 1 - June 2006
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ZXTP25015DFH Datasheet
PNP medium power transistor

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ZXTP25015DFH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
Symbol
BVCBO
BVCEO
BVEBO
BVECO
ICBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
IEBO
VCE(sat)
Base-emitter saturation
voltage
VBE(sat)
Base-emitter turn-on voltage VBE(on)
Static forward current transfer hFE
ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
fT
COBO
td
tr
ts
tf
Min.
-15
-15
-7
-3
300
200
90
Typ. Max. Unit Conditions
-35 V IC = -100A
-30 V IC = -10mA (*)
-8.4 V IE = -100A
-8.2 V IE = -100A(*)
<-1 -50 nA VCB = -12V
-20 A VCB = -12V, Tamb= 100°C
<-1 -50 nA VEB = -5.6V
-45 -55 mV IC = -1A, IB = -100mA(*)
-110 -150 mV IC = -1A, IB = -10mA(*)
-130 -175 mV IC = -2A, IB = -40mA(*)
-160 -210 mV IC = -4A, IB = -200mA(*)
-165 -220 mV IC = -5A, IB = -500mA(*)
-930 -1050 mV IC = -4A, IB = -200mA(*)
-810
450
315
145
30
295
25
33.8
43.5
196
51.7
-900
900
30
mV
MHz
IC = -4A, VCE = -2V(*)
IC = -10mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -4A, VCE = -2V(*)
IC = -10A, VCE = -2V(*)
IC = -50mA, VCE = -10V
f = 100MHz
pF VCB = -10V, f = 1MHz(*)
ns VCC = -15V.
ns IC = -750mA,
ns IB1 = IB2= -15mA
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
4
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ZXTP25015DFH Datasheet
PNP medium power transistor

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ZXTP25015DFH pdf
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Typical characteristics
ZXTP25015DFH
Issue 1 - June 2006
© Zetex Semiconductors plc 2006
5
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ZXTP25015DFH datasheets pdf
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