128 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM
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128K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
• High-speed access times: 55, 70, 100 ns
• CMOS low power operation
--60mW (typical)* operating
--3µW (typical)* CMOS standby
• TTL compatible interface levels
• Single 2.7V-3.6V Vcc power supply
• Fully static operation: no clock or refresh re-
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP-2 and 48-pin
• CE2 pin only for 48-pin TF-BGA.
* Typical values are measured at VCC=3.0V, TA=25°C
The ICSI IC62LV12816DL and IC62LV12816DLL are low-
power,2,097,152 bit static RAMs organized as 131,072 words
by 16 bits. They are fabricated using ICSI's high-performance
CMOS technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When CE1 is HIGH or when CE2 is low (deselected) or both LB
and UB are HIGH, the device assumes a standby mode at
which the power dissipation can be reduced by using CMOS
Easy memory expansion is provided by using Chip Enable
Output and Enable inputs, CE1, CE2 and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower Byte
The IC62LV12816DL and IC62LV12816DLL are packaged in
the JEDEC standare 44-pin TSOP-2 and 48-pin 6*8mm TF-
FUNCTIONAL BLOCK DIAGRAM
128K x 16
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2 Integrated Circuit Solution Inc.