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STB60NE03L-10 Datasheet
N-CHANNEL Power MOSFET

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STB60NE03L-10
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE” POWER MOSFET
TYPE
VDSS
RDS(o n)
ID
ST B60NE03L-10 30 V < 0.010 60 A
s TYPICAL RDS(on) = 0.007
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( )
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
December 1997
Value
Uni t
30 V
30 V
± 15
V
60 A
42 A
240 A
120 W
0.8 W/oC
7 V/ ns
-65 to 175
oC
175 oC
(1) ISD 60 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
1/8

STB60NE03L-10 Datasheet
N-CHANNEL Power MOSFET

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STB60NE03L-10
THERMAL DATA
Rt hj-ca se
Rth j -a m b
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.25
62.5
0.5
300
oC/ W
oC/W
oC/ W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 20 V)
Max Valu e
60
600
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
30
Typ .
Max.
Unit
V
1 µA
10 µA
± 100 nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 30 A
Resistance
VGS = 5V ID = 30 A
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
1
Typ .
1.7
Max.
2.5
Unit
V
0.007 0.01
0.015
60
A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =30 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
25
Typ .
Max.
Unit
S
4000
1000
320
5400
1350
450
pF
pF
pF
2/8

STB60NE03L-10 Datasheet
N-CHANNEL Power MOSFET

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STB60NE03L-10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 15 V
ID = 30 A
RG =4.7
VGS = 5 V
(see test circuit, figure 3)
VDD = 24 V ID = 60 A VGS = 5 V
Min.
Typ .
35
240
Max.
50
320
Unit
ns
ns
62 85 nC
20 nC
31 nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V ID = 60 A
RG =4.7 VGS = 5 V
(see test circuit, figure 5)
Min.
Typ .
60
80
150
Max.
80
110
200
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 60 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 60 A
di/dt = 100 A/µs
VDD = 24 V Tj = 150 oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ .
Max.
60
240
Unit
A
A
70
0.13
4
1.5
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8


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