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MGY20N120D Datasheet
Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
Industry Standard High Power TO–264 Package (TO–3PBL)
High Speed Eoff: 160 mJ per Amp typical at 125°C
High Short Circuit Capability – 10 ms minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
Robust RBSOA
C
G
E
Order this document
by MGY20N120D/D
MGY20N120D
Motorola Preferred Device
IGBT & DIODE IN TO–264
20 A @ 90°C
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
C
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
1200
1200
±20
28
20
56
174
1.39
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 )
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
0.7 °C/W
1.1
35
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1

MGY20N120D Datasheet
Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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MGY20N120D pdf
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MGY20N120D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Gate Charge
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc)
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125°C)
(IEC = 20 Adc)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
Symbol
BVCES
ICES
IGES
VCE(on)
VGE(th)
gfe
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
QT
Q1
Q2
VFEC
Min Typ Max Unit
1200
870
Vdc
— mV/°C
µAdc
— — 100
— — 2500
— — 250 nAdc
Vdc
— 3.00 3.54
— 2.36 —
— 2.90 4.99
Vdc
4.0 6.0 8.0
— 10 — mV/°C
— 12 — Mhos
— 1876 —
— 208 —
— 31 —
pF
— 88 — ns
— 103 —
— 190 —
— 284 —
1.65 3.75
mJ
— 2.42 7.68
— 4.07 11.43
— 83 — ns
— 107 —
— 216 —
— 494 —
— 3.19 —
mJ
— 4.26 —
— 7.45 —
— 63 — nC
— 20 —
— 27 —
Vdc
— 2.92 3.59
— 1.73 —
— 3.67 4.57
(continued)
2 Motorola TMOS Power MOSFET Transistor Device Data

MGY20N120D Datasheet
Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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MGY20N120D pdf
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MGY20N120D
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
Reverse Recovery Stored Charge
Reverse Recovery Time
(IF = 20 Adc, VR = 720 Vdc,
dIF/dt = 150 A/µs)
(IF = 20 Adc, VR = 720 Vdc,
dIF/dt = 150 A/µs, TJ = 125°C)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25from package to emitter bond pad)
trr
ta
tb
QRR
trr
ta
tb
QRR
LE
— 114 —
— 74 —
— 40 —
— 0.68 —
— 224 —
— 149 —
— 75 —
— 2.40 —
— 13 —
ns
µC
ns
µC
nH
TYPICAL ELECTRICAL CHARACTERISTICS
60
TJ = 25°C
50
40
30
20
10
VGE = 20 V
17.5 V
15 V
12.5 V
10 V
60
TJ = 125°C
50
40
30
20
10
VGE = 20 V
17.5 V
15 V
12.5 V
10 V
0
02 4 68
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
0
02 4 6
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics, TJ = 125°C
8
60
VCE = 10 V
250 µs PULSE WIDTH
40
TJ = 125°C
4
VGE = 15 V
250 µs PULSE WIDTH
3
IC = 20 A
15 A
10 A
20 2
25°C
0
5 6 7 8 9 10 11 12 13 14 15
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
1
– 50 0
50 100 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
Motorola TMOS Power MOSFET Transistor Device Data
3


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