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MGY20N120D Datasheet
Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
Industry Standard High Power TO–264 Package (TO–3PBL)
High Speed Eoff: 160 mJ per Amp typical at 125°C
High Short Circuit Capability – 10 ms minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
Robust RBSOA
C
G
E
Order this document
by MGY20N120D/D
MGY20N120D
Motorola Preferred Device
IGBT & DIODE IN TO–264
20 A @ 90°C
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
C
E
CASE 340G–02, Style 5
TO–264
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
1200
1200
±20
28
20
56
174
1.39
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 )
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
0.7 °C/W
1.1
35
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1

MGY20N120D datasheets pdf
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