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P0306SC08C Datasheet
Fast Turn-off Thyristor

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Date:- 03 August 2012
Data Sheet Issue:- K1
Fast Turn-off Thyristor
Type P0306SC08#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
400-800
400-800
400-800
500-900
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VFGM
IFGM
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power (100µs pulse width)
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=80% VDRM, IFG=1A, tr1µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
306
195
355
355
4700
5170
110×103
134×103
500
1000
12
18
5
1.5
60
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
A
V
W
W
V
°C
°C
Data Sheet. Type P0306C08# Issue K1
Page 1 of 12
August 2012


P0306SC08C Datasheet
Fast Turn-off Thyristor

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Characteristics
Fast turn-off thyristor type P0306SC08#
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH Holding current
Qrr Recovered charge
Qra Recovered charge, 50% Chord
tq Turn-off time (note 2)
RthJC
F
Wt
Thermal resistance, junction to case
Mounting torque
Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
15
10
-
24.5
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 1.8 ITM=715A
- 1.4
- 0.67
- - VD=80% VDRM
- 30 Rated VDRM
- 30 Rated VRRM
- 3.0 Tj=25°C
- 200 Tj=25°C
VD=6V, IT=1A
- 600 Tj=25°C
--
ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V
25 -
-
30
ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
-
15
ITM=300A, tp=500µs, di/dt=50A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
- 0.12 Double side cooled
- 27
280 -
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µC
µC
µs
K/W
Nm
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type P0306C08# Issue K1
Page 2 of 12
August 2012


P0306SC08C Datasheet
Fast Turn-off Thyristor

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Fast turn-off thyristor type P0306SC08#
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
08
VDRM VDSM VRRM
V
800
VRSM
V
900
VD VR
DC V
540
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f max =
1
tpulse + tq + tv
Data Sheet. Type P0306C08# Issue K1
Page 3 of 12
August 2012


P0306SC08C Datasheet
Fast Turn-off Thyristor

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Fast turn-off thyristor type P0306SC08#
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
( )WAV = EP f and TSINK (max.) = 125 WAV Rth(J Hs)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 100µs integration time.
100 µs
i.e. Qrr = irr .dt
0
(iii)
K Factor = t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
( )TCASE (new) = TCASE (original ) E k + f Rth(J Hs )
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Type P0306C08# Issue K1
Page 4 of 12
August 2012


P0306SC08C Datasheet
Fast Turn-off Thyristor

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Fast turn-off thyristor type P0306SC08#
The total dissipation is now given by:
W(TOT) = W(original) + E f
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
( )TCASE(new) = TCASE(original ) E Rth f
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
12.3 Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 Vr
CS
di
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 20V, 20with a short-circuit current rise time of not more than
1µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Type P0306C08# Issue K1
Page 5 of 12
August 2012


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