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AD648 Datasheet
Low Power BiFET Op Amp

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a
Dual Precision,
Low Power BiFET Op Amp
FEATURES
DC Performance
400 A max Quiescent Current
10 pA max Bias Current, Warmed Up (AD648B)
1 V max Offset Voltage (AD648B)
10 V/؇C max Drift (AD648B)
2 V p-p Noise, 0.1 Hz to 10 Hz
AC Performance
1.8 V/s Slew Rate
1 MHz Unity Gain Bandwidth
Available in Plastic Mini-DIP, CERDIP, and Plastic SOIC
Packages
MIL-STD-883B Parts Available
Surface Mount (SOIC) Package Available in Tape and
Reel in Accordance with EIA-481A Standard
Single Version: AD548
AD648
CONNECTION DIAGRAM
Plastic Mini-Dip (N) Package,
Plastic SOIC (R) Package
and
CERDIP (Q) Package
PRODUCT DESCRIPTION
The AD648 is a matched pair of low power, precision mono-
lithic operational amplifiers. It offers both low bias current
(10 pA max, warmed up) and low quiescent current (400 µA
max) and is fabricated with ion-implanted FET and laser wafer
trimming technologies. Input bias current is guaranteed over the
AD648’s entire common-mode voltage range.
The economical J grade has a maximum guaranteed offset
voltage of less than 2 mV and an offset voltage drift of less than
20 µV/°C. This level of dc precision is achieved using Analog’s
laser wafer drift trimming process. The combination of low
quiescent current and low offset voltage drift minimizes changes
in input offset voltage due to self-heating effects. Five grades are
offered over the commercial, industrial and military temperature
ranges.
The AD648 is recommended for any dual supply op amp
application requiring low power and excellent dc and ac per-
formance. In applications such as battery-powered, precision
instrument front ends and CMOS DAC buffers, the AD648’s
excellent combination of low input offset voltage and drift, low
bias current, and low 1/f noise reduces output errors. High
common-mode rejection (82 dB, min on the “B” grade) and
high open-loop gain ensures better than 12-bit linearity in high
impedance, buffer applications.
The AD648 is pinned out in a standard dual op amp configura-
tion and is available in seven performance grades. The AD648J
and AD648K are rated over the commercial temperature range
of 0°C to 70°C. The AD648 and AD648B are rated over the
industrial temperature range of –40°C to +85°C. The AD648S
and AD648T are rated over the military temperature range of
–55°C to +125°C and the AD648T* grade is available pro-
cessed to MIL-STD-883B, Rev. C.
The AD648 is available in an 8-lead plastic mini-DIP,
CERDIP, and SOIC.
*Not for new design, obsolete April 2002.
PRODUCT HIGHLIGHTS
1. A combination of low supply current, excellent dc and ac
performance and low drift makes the AD648 the ideal op
amp for high performance, low power applications.
2. The AD648 is pin compatible with industry standard dual
op amps such as the LF442, TL062, and AD642, enabling
designers to improve performance while achieving a reduc-
tion in power dissipation of up to 85%.
3. Guaranteed low input offset voltage (2 mV max) and drift
(20 µV/°C max) for the AD648J are achieved using Analog
Devices’ laser drift trimming technology.
4. Analog Devices specifies each device in the warmed-up
condition, insuring that the device will meet its published
specifications in actual use.
5. Matching characteristics are excellent for all grades. The
input offset voltage matching between amplifiers in the
AD648J is within 2 mV.
6. Crosstalk between amplifiers is less than –120 dB at 1 kHz.
REV. E
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002


AD648 Datasheet
Low Power BiFET Op Amp

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AD648* Product Page Quick Links
Last Content Update: 11/01/2016
Comparable Parts
View a parametric search of comparable parts
Evaluation Kits
• EVAL-OPAMP-2 Evaluation Board
Documentation
Application Notes
• AN-357: Operational Integrators
• AN-649: Using the Analog Devices Active Filter Design
Tool
Data Sheet
• AD648: Dual Precision, Low Power BiFET Op Amp Data
Sheet
Reference Materials
Tutorials
• MT-092: Electrostatic Discharge (ESD)
Design Resources
• AD648 Material Declaration
• PCN-PDN Information
• Quality And Reliability
• Symbols and Footprints
Discussions
View all AD648 EngineerZone Discussions
Sample and Buy
Visit the product page to see pricing options
Technical Support
Submit a technical question or find your regional support
number
* This page was dynamically generated by Analog Devices, Inc. and inserted into this data sheet. Note: Dynamic changes to
the content on this page does not constitute a change to the revision number of the product data sheet. This content may be
frequently modified.


AD648 Datasheet
Low Power BiFET Op Amp

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AD648–SPECIFICATIONS (@ + 25؇C and VS = ؎15 V dc, unless otherwise noted.)
Model
INPUT OFFSET VOLTAGE1
Initial Offset
TMIN to TMAX
vs. Temperature
vs. Supply
vs. Supply, TMIN to TMAX
Long-Term Offset Stability
INPUT BIAS CURREN
Either Input,2 VCM = 0
Either Input2 at TMAX, VCM = 0
Max Input Bias Current Over
Common-Mode Voltage Range
Offset Current, VCM = 0
Offset Current at TMAX
MATCHING CHARACTERISTICS3
Input Offset Voltage
Input Offset Voltage TMIN to TMAX
Input Offset Voltage vs. Temperature
Input Bias Current
Crosstalk
INPUT IMPEDANCE
Differential
Common Mode
INPUT VOLTAGE RANGE
Differential4
Common Mode
Common-Mode Rejection
VCM = ± 10 V
TMIN to TMAX
VCM = ± 11 V
TMIN to TMAX
INPUT VOLTAGE NOISE
Voltage 0.1 Hz to 10 Hz
f = 10 Hz
f = 100 Hz
f = 1 kHz
f = 10 kHz
INPUT CURRENT NOISE
f = 1 kHz
FREQUENCY RESPONSE
Unity Gain, Small Signal
Full Power Response
Slew Rate, Unity Gain
Settling Time to ± 0.01%
OPEN-LOOP GAIN
VO = ± 10 V, RL 10 k
TMIN to TMAX, RL 10 k
VO = ± 10 V, RL 5 k
TMIN to TMAX, RL 5 k
AD648J/A/S
Min Typ Max
Min
0.75
80
76/76/76
15
2.0
3.0/3.0/3.0
20
86
80
5 20
0.45/1.3/20
30
5 10
0.25/0.7/10
1.0
8
–120
1 × 101 2ʈ3
3 × 1012ʈ3
2.0
3.0/3.0/3.0
10
± 11
76
76/76/76
70
70/70/70
± 20
± 12
± 11
82
82
76
76
2
80
40
30
30
1.8
0.8 1.0
30
1.0 1.8
8
0.8
1.0
300
300/300/300
150
150/150/150
1000
700
500
300
300
300
150
150
AD648K/B/T
Typ Max
0.3 1.0
1.5/1.5/2.0
10
15
3
2
0.5
5
–120
1 × 1012ʈ3
3 × 1012ʈ3
± 20
± 12
10
0.25/0.65/10
15
5
0.15/0.35/5
1.0
1.5/1.5/2.0
5
2
80
40
30
30
1.8
1.0
30
1.8
8
1000
700
500
300
Unit
mV
µV/°C
dB
dB
µV/month
pA
nA
pA
pA
nA
mV
mV
µV/°C
pA
dB
ʈpF
ʈpF
V
V
dB
dB
dB
dB
µV p-p
nV/Hz
nV/Hz
nV/Hz
nV/Hz
fA/Hz
MHz
kHz
V/µs
µs
V/mV
V/mV
V/mV
V/mV
–2– REV. E


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AD648
SPECIFICATIONS (Continued)
Model
OUTPUT CHARACTERISTICS
Voltage @ RL 10 k,
TMIN to TMAX
Voltage @ RL 5 k,
TMIN to TMAX
Short Circuit Current
POWER SUPPLY
Rated Performance
Operating Range
Quiescent Current (Both Amplifiers)
TEMPERATURE RANGE
Operating, Rated Performance
Commercial (0°C to 70°C)
Industrial (–40°C to +85°C)
Military (–55°C to +125°C)
PACKAGE OPTIONS
SOIC (R-8)
Plastic (N-8)
CERDIP (Q-8)
Tape and Reel
AD648J/A/S
Min Typ Max
AD648K/B/T
Min Typ Max
± 12/± 12/± 12
± 11/± 11/± 11
15
± 15
± 4.5
340
± 13
± 12
± 18
400
± 12
± 11
15
± 15
± 4.5
340
± 13
± 12
± 18
400
AD648J
AD648A
AD648S
AD648K
AD648B
AD648T
AD648JR
AD648KR
AD648JN
AD648KN
AD648AQ5, AD648SQ5
AD648BQ5, AD648TQ/883B5
AD648JR-REEL, AD648JR-REEL7 AD648KR-REEL, AD648KR-REEL7
Unit
V
V
mA
V
V
µA
NOTES
1Input Offset Voltage specifications are guaranteed after five minutes of operation at T A = 25°C.
2Bias Current specifications are guaranteed maximum at either input after five minutes of operation at T A = 25°C. For higher temperature, the current doubles
every 10°C.
3Matching is defined as the difference between parameters of the two amplifiers.
4Defined as voltages between inputs, such that neither exceeds ± 10 V from ground.
5Not for new design. Obsolete April 2002.
Specifications subject to change without notice.
REV. E
–3–


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Low Power BiFET Op Amp

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AD648
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .± 18 V
Internal Power Dissipation2 . . . . . . . . . . . . . . . . . . . . 500 mW
Input Voltage3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . +VS and –VS
Storage Temperature Range (Q, H) . . . . . . . –65°C to +150°C
Storage Temperature Range (N, R) . . . . . . . . –65°C to +125°C
Operating Temperature Range
AD648J/K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
AD648A/B . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
AD648S/T . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
NOTES
1Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2Thermal Characteristics:
8-Pin Plastic Package: θJA = 165°C/Watt
8-Pin CERDIP Package: θJC = 22°C/Watt; θJA = 110°C/Watt
8-Pin SOIC Package: θJC = 42°C/Wat; θJA = 160°C/Watt
3For supply voltages less than ± 18 V, the absolute maximum input voltage is equal
to the supply voltage.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD648 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4– REV. E


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