N-channel self protected enhancement mode IntelliFET MOSFET

ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage On-state resistance Nominal load current (VIN = 5V) Clamping energy VDS = 60V 500m 1.4A 550mJ Description Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch, with status indication and programmable current limit. S D Status IN Rprog www.DataSheet4U.com Top view Note: Rprog must be connected between the Status and IN pins Features • • • • • Current limit programmable via external resistor Status pin (analog status indication) Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart • • • • • Over-current protection Input Protection (ESD) Load dump protection (actively protects load) Logic Level Input High continuous current rating Ordering information Device ZXMS6003GTA Part mark ZXMS6003 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 Issue 2 - March 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMS6003G Functional block diagram Status / current limit D Over voltage protection IN Over current protection Logic Over temperature protection Human body ESD protection S Applications and information • • • • • • Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. C compatible power switch for 12V and 24V DC applications. Automotive rated. Replaces electromechanical relays and discrete circuits. Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS, in order not to compromise the load current during normal operation. The design max. DC operating current is therefore determined by the thermal capability of the package/ board combination, rather than by the protection circuitry. Note: This does not compromise the product's ability to self-protect during short-circuit load conditions. The current limit is programmable via an external resistor Rprog connected between Status and IN pins. Status pin voltage reflects the gate drive being applied internally to the power MOSFET. With VIN = 5V and Rprog = 24k : Status voltage ~ 5V indicates normal operation. Status voltage ~ (2-3)V indicates that the device is in current-limiting mode. Status voltage < 1V indicates that the device is in thermal shutdown. • • Issue 2 - March 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXMS6003G Issue 2 - March 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXMS6003G Absolute maximum ratings Parameter Continuous drain-source voltage Drain-source voltage for short circuit protection VIN=5V(a) Drain-source voltage for short circuit protection VIN=10V(a) Continuous input voltage Peak input voltage Operating temperature range Storage temperature range Power dissipation @ Tamb =25°C(a) Continuous drain current @ VIN=10V; Tamb=25°C(b) Continuous drain current @ VIN=5V; Tamb=25°C(b) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Unclamped single pulse inductive energy Load dump protection Electrostatic discharge (human body model) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VDS VDS(SC) VDS(SC) VIN VIN Tj, Tstg PD ID ID IS IS EAS VLoadDump VESD Limit 60 36 20 -0.2 ... +10 -0.2 ... +20 -40 to +150 -55 to +150 2.5 1.6 1.4 3 8 550 80 4000 E 40/150/56 Unit V V V V V °C °C W A A A A mJ V V Thermal resistance Parameter Junction to ambient Junction to ambient Symbol R JA R JA Limit 50 28 Unit °C/W °C/W NOTES: (a) For ID(LIM) < 1.2A (see safe operating area curve). (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. (c) For a device surface mounted on FR4 board and measured at t<=10s. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXMS6003G Characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXMS6003G Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Static Characteristics Drain-source clamp voltage Off state drain current Off state drain current Input threshold voltage (*) Input current Input current Input current Static drain-source on-state resistance Static drain-source on-state resistance Current limit (†) Current limit(†) Dynamic characteristics Turn-on time (VIN to 90% ID) ton 3.0 10 s Rprog=20k, RL=22 , VIN=0 to 10V, VDD=12V Rprog=20k, RL=22 , VIN=10V to 0V, VDD=12V Rprog=20k, RL=22 , VIN=0 to 10V, VDD=12V Rprog=20k, RL=22 , VIN=10V to 0V, VDD=12V VDS(AZ) IDSS IDSS VIN(th) IIN IIN IIN RDS(on) RDS(on) ID(LIM) ID(LIM) 0.2 0.7 1 60 70 0.1 3 2.1 0.7 1.5 4 520 385 0.3 0.9 1.2 2.7 7 675 500 0.4 1.2 75 3 15 V A A V mA mA mA m m A A ID=10mA VDS=12V, VIN=0V VDS=32V, VIN=0V VDS=VGS, ID=1mA VIN=+5V VIN=+7V VIN=+10V VIN=5V, ID=0.2A VIN=10V, ID=0.5A VIN=5V, Vds=10V Rprog=20k VIN=10V, Vds=10V, Rprog=20k Symbol Min Typ Max Unit Conditions Turn-off time (VIN to 90% ID) toff 13 20 s Slew rate on (70 to 50% VDD) -dVDS/dton 8 20 V/ s Slew rate off (50 to 70% VDD) DVDS/dton 3.2 10 V/ s NOTES: (*) Protection features may operate outside spec for VIN<4.5V (†) The drain current is limited to a reduced value when Vds exceeds a safe level. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com ZXMS6003G Electrical characteristics (at Tamb = 25°C unless otherwise stated) (cont.) Parameter Protection functions(‡) Required input voltage for VPROT over temperature protection Thermal overload trip temperature Thermal hysteresis Unclamped single pulse inductive energy Tj=25°C Unclamped single pulse inductive energy Tj=150°C Status flag Normal operation Current limit operating VSTATUS VSTATUS 4.95 2.5 0.2 8.0 3.0 0.35 1 1 V V V V V V VIN = 5V VIN = 5V VIN = 5V VIN = 10V VIN = 10V VIN = 10V EAS 550 TJT 4.5 150 175 1 V °C °C mJ ID(ISO)=0.7A, VDD=32V ID(ISO)=0.7A, VDD=32V Symbol Min Typ Max Unit Conditions EAS 200 mJ Thermal shutdown activated VSTATUS Normal operation Current limit operation VSTATUS VSTATUS Thermal shutdown activated VSTATUS Inverse diode Source drain voltage VSD 1 V VIN=0V, -ID=1.4A NOTES: (‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. Issue 2 - March 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXMS6003G Typical characteristics Issue 2 - March 2007 © Zetex Semiconductors plc 2007 8 www.zetex.com ZXMS6003G Package outline - SOT223 DIM A A1 b b2 C D Millimeters Min 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 - Inches Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 DIM e e1 E E1 L - Millimeters Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 - Inches Min Max 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 2 - March 2007 © Zetex Semiconductors plc 2007 9 www.zetex.com ZXMS6003G Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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