200V SOT23 P-channel enhancement mode MOSFET

ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS -200 RDS(on) ( ) 28 @ VGS= -10V ID (mA) -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits. Features • • www.DataSheet4U.com D G High voltage Low on-resistance Fast switching speed Low gate drive Low threshold SOT23 FLAT package • • • • S Applications • Active clamping of primary side MOSFETs in 48 volt DC-DC converters S D Ordering information Device ZXMP2120FFTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 G Top view Device marking 1C4 Issue 1 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMP2120FF Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS= 10V; Tamb=25°C(a) Pulsed drain current(c) Pulsed source current (body diode)(c) Power dissipation at Tamb=25°C(a) Linear derating factor Power dissapation at Tamb=25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD Symbol VDSS VGS ID IDM ISM PD Limit -200 ± 20 -137 -0.8 -0.8 1 8 1.5 12.3 -55 to +150 Unit V V mA A A W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Symbol R JA R JA Limit 125 81 Unit °C/W °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 pcb measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Issue 1 - January 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXMP2120FF Thermal characteristics Issue 1 - January 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXMP2120FF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Static Drain-source breakdown voltage V(BR)DSS -200 -10 -100 Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (*) On-state drain current(*) IGSS VGS(th) RDS(on) ID(on) -300 50 -1.5 20 -3.5 28 mA mS V A A nA V ID= 1mA, VGS=0V VDS= -200V, VGS=0V VDS= -160V, VGS=0V, T=125C(‡) VGS=±20V, VDS=0V ID= 250 A, VDS=VGS VGS= -10V, ID= -150mA VDS= -25V, VGS=-10V VDS= -25V, ID= -150mA VDS= -25V, VGS=0V f=1MHz Symbol Min. Max. Unit Conditions Zero gate voltage drain current IDSS Forward transconductance(*) (‡) gfs Dynamic(‡) Input capacitance Output capacitance Reverse transfer capacitance Switching (†) (‡) Turn-on-delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf Ciss Coss Crss 100 25 7 pF pF pF 7 15 12 15 ns ns ns ns VDD= -25V, VGS= -10V ID= -150mA RSOURCE ≈ 50 NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 1 - January 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXMP2120FF Typical charateristics ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VGS= -10V - 8V -7V -6V -0.4 -0.4 VGS= -10V - 8V - 7V -6V -0.6 -0.3 - 5V -0.2 -4.5V -0.1 -4V -3.5V 0 0 -2 -4 -6 -8 -10 -5V -0.2 -4.5V - 4V 0 0 -20 -40 -60 -80 -3.5V -100 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) -20 VDS-Drain Source Voltage (Volts) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 -2 -4 -6 -8 ID= -300mA VDS= -25V -0.6 -0.4 -10V -0.2 -200mA -100mA -50mA -10 0 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) Transfer Characteristics 100 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 a ist es eR rc ou -S in a Dr eR nc n) (o DS 50 ID= -300mA -200mA -I00mA -50mA VGS=-10V ID=-0.1A VGS=VDS ID=-1mA Gate Thresh old Voltage VGS(th) 10 -1 -10 -20 20 40 60 80 100 120 140 160 180 VGS-Gate Source Voltage (Volts) T-Temperature (°C) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature Issue 1 - January 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXMP2120FF Typical characteristics 200 200 VDS=-25V gfs-Transconductance (mS) 160 140 120 100 80 60 40 20 0 0 -0.2 -0.4 gfs-Transconductance (mS) 180 180 160 140 120 100 80 60 40 20 0 0 -2 -4 -6 -8 -10 VDS=-25V -0.6 -0.8 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 0 ID=- 0.4A -2 -4 -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS= -50V -100V -180V 100 C-Capacitance (pF) 80 Ciss 60 40 20 Coss Crss 0 -10 -20 -30 -40 -50 VDS-Drain Source Voltage (Volts) Q -C ha rge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage Issue 1 - January 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com ZXMP2120FF Typical characteristics Current regulator QG 12V 0.2 F 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG RD VDS VCC 10% VGS tr t(on) td(off) tr t(on) td(on) Pulse width 1 S Duty factor 0.1% Switching time waveforms Switching time test circuit Issue 1 - January 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXMP2120FF Intentionally left blank Issue 1 - January 2007 © Zetex Semiconductors plc 2007 8 www.zetex.com ZXMP2120FF Package outline - SOT23F D b b L1 L c e1 e E1 E E2 b R A A1 Dim. A A1 b c D e e1 Millimeters Min. 0.80 0.00 0.35 0.10 2.80 1.80 Max. 1.00 0.10 0.45 0.20 3.00 2.00 Inches Min. 0.0315 0.00 0.0153 0.0043 0.1102 0.0709 Max. 0.0394 0.0043 0.0161 0.0079 0.1181 0.0787 Dim. E E1 E2 L L1 R O Millimeters Min. 2.30 1.50 1.10 0.48 0.30 0.05 0° Max. 2.50 1.70 1.26 0.68 0.50 0.15 12° Inches Max. 0.0906 0.0590 0.0433 0.0189 0.0153 0.0019 0° Max. 0.0984 0.0669 0.0496 0.0268 0.0161 0.0059 12° 0.95 ref 0.0374 ref Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - January 2007 © Zetex Semiconductors plc 2007 9 www.zetex.com ZXMP2120FF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. 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