N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=50Ω ZVN0535A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE 350 90 600 ± 20 UNIT V mA mA V mW °C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) 100 70 10 4 7 7 16 10 3-353 150 50 350 1 3 20 10 400 MAX. UNIT CONDITIONS. V V nA µA µA ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=350 V, VGS=0 VDS=280 V, VGS=0V, T=125°C(2) VDS=25 V, VGS=10V VGS=10V,ID=100mA VDS=25V,ID=100mA mA Ω Forward Transconductance(1)(2gfs ) Input Capacitance (2) Common Source Output Capacitance (2) Ciss Coss mS pF pF pF ns ns ns ns VDS=25 V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) td(on) tr td(off) tf VDD ≈ 25V, ID=100mA ( 1 ZVN0535A TYPICAL CHARACTERISTICS ID(On) On-State Drain Current (mA) 800 700 600 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 3V 4V VGS= 10V 8V 6V 5V 400 VGS= 10V 6V 5V 4V ID(On)Drain Current (mA) 300 200 100 3V 0 0 4 8 12 16 20 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics VDS-Drain Source Voltage (Volts) 20 500 ID(On) Drain Current (mA) 16 ID= 250mA 400 VDS= 25V 12 300 8 200 4 100mA 50mA 2 4 6 8 10 100 0 0 1 2 3 4 5 6 7 8 9 10 0 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics Transfer Characteristics 100 250 gfs-Transconductance (mS) C-Capacitance (pF) 80 60 Ciss 40 20 0 0 10 20 30 40 50 Coss Crss 200 150 100 50 0 0 100 200 VDS= 25V 300 400 500 VDS-Drain Source Voltage (Volts) ID(on)- Drain Current (mA) Capacitance v drain-source voltage Transconductance v drain current 3-354 ZVN0535A TYPICAL CHARACTERISTICS VDS=100V 200V 360V gfs-Forward Transconductance (mS) 250 VDS=25V 10 VGS-Gate Source Voltage (Volts) 200 150 8 ID=500mA 6 100 4 2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 50 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) Q-Charge (nC) Transconductance v gate-source voltage RDS(ON) -Drain Source Resistance (Ω) Gate charge v gate-source voltage Normalised RDS(on) and VGS(th) 100 90 80 70 60 50 40 30 20 ID= 250mA 100mA 50mA 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 e rc ou -S in a Dr e nc ta is es R RD ) on S( VGS=10V ID=0.1A VGS=VDS ID=1mA Gate T hre shold V oltage V GS(th ) 10 1 2 3 4 5 6 7 8 9 10 20 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS-Gate Source Voltage (Volts) Tj-Junction Temperature (C°) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature 3-355