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Zetex Semiconductors
Zetex Semiconductors

ZTX750 Datasheet

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS


ZTX750 Datasheet Preview


PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot= 1 Watt
ZTX750
ZTX751
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL ZTX750 ZTX751
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptot
-60 -80
-45 -60
-5
-6
-2
1
5.7
V
V
V
A
A
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
ZTX750
ZTX751
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
V(BR)CBO -60
V(BR)CEO -45
V(BR)EBO -5
ICBO
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
-80
-60
-5
-0.1
-10
-0.1
-0.15 -0.3
-0.28 -0.5
-0.9 -1.25
V
V
V
µA
-0.1 µA
µA
-10 µA
-0.1 µA
-0.15 -0.3 V
-0.28 -0.5 V
-0.9 -1.25 V
IC=-100µA
IC=-10mA
IE=-100µA
VCB=-45V
VCB=-60V
VCB=-45V,Tamb=100°C
VCB=-60V,Tamb=100°C
VEB=-4V
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-1A, IB=-100mA
3-257
Page 1

ZTX750
ZTX751
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
ZTX750
ZTX751
SYMBOL
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
fT 100 140
100 140
MHz IC=-100mA, VCE=-5V
f=100MHz
Switching Times ton
40
40 ns
toff 450
450 ns
Output
Capacitance
Cobo
30 30 pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
VCB=10V f=1MHz
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
175
116
70
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
UNIT
°C/W
°C/W
°C/W
2.5
2.0
1.5
1.0
0.5
AmbieCnat steemtemppeerraattuurree
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
200
100
D=1 (D.C.)
t1 D=t1/tP
tP
D=0.5
0
0.0001
D=0.2
D=0.1
Single Pulse
0.001 0.01 0.1
1 10
Pulse Width (seconds)
100
Maximum transient thermal impedance
3-258
Page 2

ZTX750
ZTX751
TYPICAL CHARACTERISTICS
0.6
0.5
0.4
IC/IB=10
0.3
0.2
0.1
0
0.0001 0.001 0.01 0.1
1
IC - Collector Current (Amps)
VCE(sat) v IC
10
td
tr
tf ts
ns ns
140 700
120 600
100 500
80 400
60 300
40 200
20 100
00
IB1=IB2=IC/10
ts
td
tf
tr
0.1 1
IC - Collector Current (Amps)
Switching Speeds
225
175
VCE=2V
125
75
0
0.01
0.1
1
IC - Collector Current (Amps)
hFE v IC
1.2
1.0
VCE=2V
0.8
0.6
0.4
0.0001 0.001 0.01 0.1
1
IC - Collector Current (Amps)
VBE(on) v IC
1.4
1.2
1.0 IC/IB=10
0.8
0.6
10
0.0001 0.001 0.01 0.1
1
IC - Collector Current (Amps)
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
10
10
1
D.C.
1s
100ms
10ms
0.1 1.0ms
100µs
10
0.01
0.1
1
ZTX750
ZTX751
10
100
VCE - Collector Voltage (Volts)
Safe Operating Area
3-259
Page 3
Part Number ZTX750
Manufactur Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
Total Page 3 Pages
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