Silicon Diode

www.DataSheet4U.com YG811S04R SCHOTTKY BARRIER DIODE (40V / 5A TO-22OF15) Outline Drawings 10.5±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 3.7±0.2 1.2±0.2 13Min 0.7±0.2 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 0.6±0.2 2.7±0.2 5.08±0.4 Applications High speed power switching. JEDEC EIAJ SC-67 Connection Diagram 1 3 Maximum Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions Rating 40 Unit V V V A A °C °C tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=122°C Square wave Sine wave 10ms 48 1500 5 120 -40 to +150 -40 to +150 Electrical Characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=5.0A VR=VRRM Junction to case Max. 0.55 5.0 5.0 Unit V mA °C/W Mechanical Characteristics Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 N·m g www.DataSheet4U.com (40V / 5A TO-22OF15) Characteristics Forward Characteristic (typ.) 100 YG811S04R Reverse Characteristic (typ.) 10 2 Tj=150°C 10 1 Tj=125°C Tj=100°C Forward Current (A) 10 Tj=150°C Tj=125°C Tj=100°C Tj=25°C IR Reverse Current (mA) 10 0 10 -1 1 IF Tj=25°C 10 -2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -3 0 10 20 30 40 50 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 7.0 6.5 6.0 5.5 Reverse Power Dissipation 12 Io 360° λ VR DC WF Forward Power Dissipation (W) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Per 1element Square wave Square wave Sine wave Square wave λ =60° λ =120° λ =180° λ =180° PR Reverse Power Dissipation (W) 360° 10 α 8 6 α =180° DC 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Io Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) 160 Junction Capacitance Characteristic (typ.) 150 140 Tc Case Temperature (°C) 130 Sine wave 120 Square wave λ =180° λ =180° Cj Junction Capacitance (pF) DC 1000 Square wave 110 λ =120° 100 360° λ Io VR=30V Square wave λ =60° 90 80 0 1 2 3 4 5 6 7 8 100 1 10 100 Io Average Output Current (A) λ :Conduction angle of forward current for each rectifier element VR Reverse Voltage (V) Io:Output current of center-tap full wave connection www.DataSheet4U.com (40V / 5A TO-22OF15) YG811S04R Surge Capability 1000 Peak Half - Wave Current I FSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 2 Transient Thermal Impedance (°C/W) 10 1 10 0 10 -1 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec.)