Schottky barrier diode

Part  Number YA846C04
Manufacturer Fuji Electric
Semiconductor DataSheet

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www.DataSheet4U.com YA846C04 (30A) Schottky barrier diode Major characteristics Characteristics YA846C04 Units Condition VRRM VF IO 45 0.4 30 V V A Tj=125°C, typ 10+0.5 0 (45V / 30A ) Outline drawings, mm Ø3.6±0.2 2.7±0.1 4.5±0.2 0 14 -0.5 1.2 3.7±0.2 15±0.2 6.4±0.2 0.4 0.8 2.54 5.08 2.7 Features Low VF Optimized for 3.3V 5V output application Center tap connection Applications High frequency operation DC-DC converters AC adapter Package : TO-220 Connection diagram 1 2 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Average output current Non-repetitive surge current Operating junction temperature Storage temperature Symbol VRSM VRRM Io IFSM Tj Tstg Square wave, duty=1/2 Tc=98°C Sine wave 10ms, 1shot Conditions tw=500ns, duty=1/40 Rating 45 45 30 * 200 +150 -40 to +150 Unit V V A A °C °C * Average output current at centertap full wave connection Electrical characteristics (Tc=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Symbol VF IR Conditions IFM=12.5A VR=VRRM Max. 0.55 5.0 Unit V mA Electrical characteristics (Tc=25°C Unless otherwise specified ) Item Thermal resistance Symbol Rth(j-c) Condition Junction to case Max. 2.0 Unit °C/W (45V / 30A ) Characteristics Forward Characteristic (typ.) 100 2 YA846C04 (30A) Reverse Characteristic (typ.) Tj=150°C 10 Tj=125°C Tj=100°C (A) (mA) Tj=150°C Tj=125°C Tj=100°C Tj=25°C 10 10 1 Forward Current Reverse Current 10 0 Tj= 25°C 10 -1 1 IF IR 0.1 0.0 10 -2 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -3 0 10 20 30 40 50 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 22 20 Io Reverse Power Dissipation 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 360° DC (W) 18 16 14 12 10 8 6 4 2 λ 360° (W) VR α Forward Power Dissipation Square wave λ=60° Square wave λ=120° Sine wave λ=180° Square wave λ=180° DC Reverse Power Dissipation α=180° WF Per 1element 0 0 2 4 6 8 10 12 14 16 PR 5 10 15 20 25 30 35 40 45 50 Io Average Forward Current (A) VR Reverse Voltage (V) Current Derating (Io-Tc) 160 150 140 130 360° λ Io Junction Capacitance Characteristic(typ.) 10000 (°C) 120 110 100 90 DC Case Temperature Junction Capacitance Cj (pF) 1000 100 10 100 45 VR=30V Sine wave λ=180° Square wave λ=180° Square wave λ=120° 80 70 60 50 0 5 10 15 20 25 Square wave λ=60° 30 35 40 Tc Io Average Output Current (A) VR Reverse Voltage (V) λ :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (45V / 30A ) Surge Capability 1000 YA846C04 (30A) Peak Half - Wave Current I FSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 1 (°C/W) Transient Thermal Impedance 10 0 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec)




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