GaAs MMIC Transmitter

19.0-26.0 GHz GaAs MMIC Transmitter June 2005 - Rev 21-Jun-05 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout U1003 Mimix Broadband’s 19.0-26.0 GHz GaAs MMIC transmitter has a +20.0 dBm output third order intercept and 15.0 dB image rejection across the band. This device is an image reject subharmonic anti-parallel diode mixer followed by a balanced two stage output amplifier and includes an integrated LO buffer amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.0 VDC 320, 165 mA +0.5 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss RF (S22) Small Signal Conversion Gain IF/RF (S21) LO Input Drive (PLO) Image Rejection Isolation 2xLO to RF Output Third Order Intercept (OIP3) Drain Bias Voltage (Vd1) Drain Bias Voltage (Vd2) Gate Bias Voltage (Vg1,2) Supply Current (Id1) (Vd1=4.0V, Vg=-0.1V Typical) Supply Current (Id2) (Vd2=4.0V, Vg=-0.1V Typical) Units GHz GHz GHz GHz dB dB dBm dBc dB dBm VDC VDC VDC mA mA Min. 19.0 19.0 8.0 DC -1.2 Typ. 14.0 10.0 +2.0 15.0 -12.0 TBD +4.0 +4.0 -0.1 230 116 Max. 26.0 26.0 14.5 3.0 +4.5 +4.5 +0.3 280 140 Page 1 of 7 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 19.0-26.0 GHz GaAs MMIC Transmitter June 2005 - Rev 21-Jun-05 U1003 Transmitter Measurements XU1003: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, USB LO = + 2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices 20 0 XU1003: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, USB LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices 18 -5 16 -10 Image Rejection (dBc) 14 Conversion Gain (dB) -15 12 10 -20 8 -25 6 -30 4 -35 2 0 19 20 21 22 23 24 25 26 -40 19 20 21 22 23 24 25 26 RF Frequency (GHz) Max Median Mean -3sigma Max RF Frequency (GHz) Median Mean -3sigma XU1003: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, LSB LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices 20 0 XU1003: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, LSB LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices 18 -5 16 -10 Image Rejection (dBc) 19 20 21 22 23 24 25 26 14 Conversion Gain (dB) -15 12 10 -20 8 -25 6 -30 4 -35 2 0 -40 19 20 21 22 23 24 25 26 RF Frequency (GHz) Max Median Mean -3sigma RF Frequency (GHz) Max Median Mean -3sigma XU1003: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices 0 0 XU1003: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices -2 -5 -4 -10 -6 2xLO to RF Isolation (dB) 19 20 21 22 23 24 25 26 RF Return Loss (dB) -15 -8 -10 -20 -12 -25 -14 -30 -16 -35 -18 -20 -40 17 18 19 20 21 22 23 24 25 26 27 28 RF Frequency (GHz) Max Median Mean -3sigma Max 2xLO Frequency (GHz) Median Mean -3sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 7 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 19.0-26.0 GHz GaAs MMIC Transmitter June 2005 - Rev 21-Jun-05 U1003 1.678 (0.066) 2 Mechanical Drawing 1.945 (0.077) 1.608 (0.063) 1 2.478 (0.098) 3 3.278 (0.129) 4 5 1.487 (0.059) 0.0 0.0 10 9 8 7 6 1.678 (0.066) 2.478 (0.098) 3.077 3.278 (0.121) (0.129) 3.677 3.970 (0.145) (0.156) (Note: Engineering designator is 22TX0523) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.787 mg. Bond Pad #1 (RF Out) Bond Pad #2 (Vd1) Bond Pad #3 (IF1) Bond Pad #4 (Vd2) Bond Pad #5 (LO) Bond Pad #6 (Vg2b) Bond Pad #7 (Vg2) Bond Pad #8 (Vg2a) Bond Pad #9 (IF2) Bond Pad #10 (Vg1) Bias Arrangement Vd1 IF1 2 3 4 Bypass Capacitors - See App Note [2] Vd2 Vd2 Vd1 LO IF1 RF 1 5 RF LO XU1003 10 9 8 7 6 Vg1 IF2 Vg2 IF2 Vg1 Vg2 Page 3 of 7 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 19.0-26.0 GHz GaAs MMIC Transmitter June 2005 - Rev 21-Jun-05 U1003 App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=230mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Tables (TBD) These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius Rth MTTF Hours FITs C/W C/W C/W E+ E+ E+ E+ E+ E+ Bias Conditions: Vd1=4.0V, Vd2=4.0V, Id1=230 mA, Id2=116 mA Typical Application XU1003 Sideband Reject XB1004 XP1013 IF IN 2 GHz RF Out 21.2-23.6 GHz LO(+2.0dBm) 9.6-10.8 GHz (USB Operation) 11.6-12.8 GHz (LSB Operation) Mimix Broadband MMIC-based 19.0-26.0 GHz Transmitter Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 26 GHz) Mimix Broadband's 19.0-26.0 GHz XU1003 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation schemes up to 16 QAM. The transmitter can be used in upper and lower sideband applications from 19.0-26.0 GHz. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 7 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 19.0-26.0 GHz GaAs MMIC Transmitter June 2005 - Rev 21-Jun-05 U1003 App Note [3] USB/LSB Selection - LSB USB For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. IF2 IF1 For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0º) and coupled port (90º) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. An alternate method of Selection of USB or LSB: USB LSB In Phase Combiner In Phase Combiner -90o -90 o IF2 IF1 IF2 IF1 Mimix Broadband, Inc., 10795 Rockley Rd., H