GaAs MMIC Transmitter

18.0-25.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept (OIP3) 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s 18.0-25.0 GHz GaAs MMIC transmitter has a +20.0 dBm output third order intercept and 15.0 dB image rejection across the band. This device is an image reject subharmonic anti-parallel diode mixer followed by a balanced two stage output amplifier and includes an integrated LO buffer amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Chip Device Layout U1002 General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +4.5 VDC 320, 165 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table3 MTTF Table 3 (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss RF (S22) Small Signal Conversion Gain IF/RF (S21) 2 LO Input Drive (PLO) Image Rejection 2 Isolation LO/RF @ LOx1/LOx2 Output Third Order Intercept (OIP3) 1,2 Drain Bias Voltage (Vd1) Drain Bias Voltage (Vd2) Gate Bias Voltage (Vg1,2) Supply Current (Id1) (Vd1=3.5V, Vg=-0.3V Typical) Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical) (1) Measured using constant current. (2) Measured using LO Input drive level of +2.0 dBm. Units GHz GHz GHz GHz dB dB dBm dBc dB dBm VDC VDC VDC mA mA Min. 18.0 18.0 7.5 DC -1.2 - Typ. 16.0 10.0 +2.0 15.0 10.0 +20.0 +3.5 +4.0 -0.3 230 116 Max. 25.0 21.0 11.5 3.0 +4.5 +4.5 +0.1 280 140 Page 1 of 8 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18.0-25.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1002 Transmitter Measurements XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, USB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~120 Devices 15 14 15 14 Conversion Gain (dB) XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, LSB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~120 Devices Conversion Gain (dB) 13 12 11 10 9 8 7 6 5 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 13 12 11 10 9 8 7 6 5 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 RF Frequency (GHz) Max Median Mean -3sigma Max RF Frequency (GHz) Median Mean -3sigma XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, USB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~120 Devices 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 16.0 0 -5 Image Rejection (dBc) XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, LSB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~120 Devices Image Rejection (dBc) -10 -15 -20 -25 -30 -35 -40 -45 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 RF Frequency (GHz) Max Median Mean -3sigma Max RF Frequency (GHz) Median Mean -3sigma XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, USB/LSB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~130 Devices 0 -5 2xLO/RF Isolation (dB) XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, USB/LSB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~130 Devices 0 -10 -20 -30 -40 -50 RF Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 16.0 -60 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 RF Frequency (GHz) Max Median Mean -3sigma Max 2xLO Frequency (GHz) Median Mean -3sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 8 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18.0-25.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1002 Transmitter Measurements (cont.) XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, USB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~1240 Devices 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 17.0 XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, LSB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~1240 Devices 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 17.0 Conversion Gain (dB) Conversion Gain (dB) 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 RF Frequency (GHz) Max Median Mean -3sigma RF Frequency (GHz) Max Median Mean -3sigma XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, USB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~1240 Devices 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 17.0 0 Image Rejection (dBc) Image Rejection (dBc) XU1002 Vd1=3.5 V, Vd2=4.0 V, Id1=230 mA, Id2=116 mA, LSB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~1240 Devices -5 -10 -15 -20 -25 -30 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 RF Frequency (GHz) Max Median Mean -3sigma Max RF Frequency (GHz) Median Mean -3sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 8 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18.0-25.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1002 1.678 (0.066) 2 Mechanical Drawing 1.945 (0.077) 1.608 (0.063) 1 2.478 (0.098) 3 3.278 (0.129) 4 5 1.487 (0.059) 0.0 0.0 10 9 8 7 6 1.678 (0.066) 2.478 (0.098) 3.077 3.278 (0.121) (0.129) 3.677 3.972 (0.145) (0.156) (Note: Engineering designator is 22TX0280) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.013 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.787 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (IF1) Bond Pad #4 (Vd2) Bond Pad #5 (LO) Bond Pad #6 (Vg2b) Bond Pad #7 (Vg2) Bond Pad #8 (Vg2a) Bond Pad #7 (IF2) Bond Pad #8 (Vg1) Bias Arrangement Vd1 IF1 2 3 4 Bypass Capacitors - See App Note [2] Vd2 Vd2 Vd1 RF 5 IF1 RF 1 LO LO 10 9 8 7 6 IF2 Vg1 Vg2 IF2 Vg1 Vg2 Page 4 of 8 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18.0-25.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1002 App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd1=3.5V, Id1=230mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Tables (TBD) These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg C