GaAs MMIC Transmitter

33.0-40.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1001 Chip Device Layout Features Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010 U1001 General Description Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF isolation. The device has a pair of sub-harmonic mixers configured to form an image reject mixer which requires an LO at 15.5-21.5 GHz. This is followed by a two stage LNA. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of the subharmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 70 mA +0.3 VDC +10 dBm -65 to +165 OC -55 to MTTF Table4 MTTF Table4 (4) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss RF (S22) Small Signal Conversion Gain IF/RF (S21) (USB/LSB) 3 LO Input Drive (PLO) Image Rejection (USB/LSB) 3 Isolation LO/RF @ LOX2 Input Power for 1 dB Compression (P1dB) 1,2 Drain Bias Voltage (Vd) Gate Bias Voltage (Vg) Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical) Units GHz GHz GHz GHz dB dB dBm dBc dB dBm VDC VDC mA Min. 34.0 33.0 15.5 DC 3.0/3.0 8.0/5.0 -1.0 Typ. 12.0 8.0/8.0 +12.0 12.0/12.0 30.0 +3.0 +3.0 -0.5 30 Max. 40.0 40.0 21.5 3.0 +5.5 0.0 60 (1) Optional power bias Vd=5.5V, Id=60mA will typically yield improved P1dB. (2) Measured using constant current. (3) Min/Max limits over 33.0-39.5 GHz. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 8 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 33.0-40.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1001 Transmitter Measurements XU1001 Vd=3.0 V, Id=30 mA, USB LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices 14 Conversion Gain (dB) XU1001 Vd=3.0 V, Id=30 mA, LSB LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices 14 Conversion Gain (dB) 12 10 8 6 4 2 0 35 36 37 38 RF Frequency (GHz) +3sigma Median Mean -3sigma 39 40 41 12 10 8 6 4 2 0 35 36 37 38 RF Frequency (GHz) Max Median Mean -3sigma 39 40 41 XU1001 Vd=3.0 V, Id=30 mA, USB LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 35 36 37 38 RF Frequency (GHz) Max Median Mean -3sigma 39 40 41 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 35 Image Rejection (dBc) Image Rejection (dBc) XU1001 Vd=3.0 V, Id=30 mA, LSB LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices 36 37 38 RF Frequency (GHz) 39 40 41 +3sigma Max Median Mean -3sigma XU1001 Vd=3.0 V Id=30 mA LO/RF Isolation (dB) 50 40 30 20 10 0 36.00 36.50 37.00 37.50 38.00 38.50 39.00 39.50 40.00 Frequency (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 8 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 33.0-40.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1001 Transmitter Measurements (cont.) XU1001 Vd=3.0 V, Id=30 mA, USB LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 30.5 XU1001 Vd=3.0 V, Id=30 mA, LSB LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 30.5 Conversion Gain (dB) 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 Conversion Gain (dB) 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 RF Frequency (GHz) Max Median Mean -3sigma RF Frequency (GHz) Max Median Mean -3sigma XU1001 Vd=3.0 V, Id=30 mA, USB LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices 0 Image Rejection (dBc) Image Rejection (dBc) XU1001 Vd=3.0 V, Id=30 mA, LSB LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices 0 -5 -5 -10 -10 -15 -15 -20 -20 -25 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 -25 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 RF Frequency (GHz) Max Median Mean -3sigma Max RF Frequency (GHz) Median Mean -3sigma XU1001 Vd=3.0 V, Id=30 mA, USB/LSB LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices 0 -5 RF Return Loss (dB) -10 -15 -20 -25 -30 -35 30.5 31.5 32.5 33.5 34.5 35.5 36.5 37.5 38.5 39.5 40.5 RF Frequency (GHz) Max Median Mean Min Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 8 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 33.0-40.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1001 0.541 (0.021) 2 Mechanical Drawing 2.500 (0.098) 1.143 (0.045) 3 U1001 1.285 (0.051) 1 4 0.312 (0.012) 0.0 0.0 6 5 0.541 (0.021) 1.143 (0.045) 2.900 (0.114) (Note: Engineering designator is 38TRX_01B2) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.491 mg. Bond Pad #1 (RF Out) Bond Pad #2 (IF2) Bond Pad #3 (IF1) Bond Pad #4 (LO) Bond Pad #5 (Vg) Bond Pad #6 (Vd) Bypass Capacitors - See App Note [2] Bias Arrangement IF2 2 IF1 3 IF2 IF1 U1001 RF 1 RF LO 4 6 5 LO Vd Vg Vd Vg Page 4 of 8 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 33.0-40.0 GHz GaAs MMIC Transmitter May 2005 - Rev 13-May-05 U1001 App Note [1] Biasing - As shown in the bonding diagram, this device is operated with both stages in parallel. Nominal bias is Vd=3V, Id=30mA. Power bias may be as high as Vd=5.5V, Id=60mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. Note: RF and IF ports are AC coupled (DC blocks on chip). LO port is DC coupled (no DC block on chip.) MTTF Tables These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 84 deg Celsius 104 deg Celsius 124 deg Celsius Rth MTTF Hours FITs 318.0° C/W - 7.63E+11 4.79E+10 3.95E+09 1.31E-03 2.09E-02 2.53E-01 Bias Conditions: Vd=3.0V, Id=30 mA Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 159 deg Celsius 179 deg Celsius 199 deg Celsius Rth MTTF Hours FITs 314.8° C/W - 1.39E+08 2.09E+07 3.67E+06 7.18E+00 4.79E+01 2.72E+02 Bias Conditions: Vd=5.5V, Id=60 mA Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 8 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing fr