NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.17Ω (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Package
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP151A11B0MR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.12Ω ( Vgs = 10V ) : Rds (on) = 0.17Ω ( Vgs = 4.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 4.5V High density mounting : SOT-23
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PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Tch Tstg 150 -55 ~ 150 SYMBOL Vdss Vgss Id Idp Idr Pd RATINGS 30 + 20 1 4 1 0.5
Ta=25 OC UNITS V V A A A W
O
C C
O
( note ) : When implemented on a ceramic PCB
802
DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = 30V , Vgs = 0V Vgs = ± 20V , Vds = 0V Id = 1mA , Vds = 10V Id = 0.5A , Vgs = 10V Id = 0.5A , Vgs = 4.5V Id = 0.5A , Vds = 10V If = 1A , Vgs = 0V 1.0 0.09 0.13 2.4 0.8 1.1 MIN TYP MAX 10
± 10
Ta=25°C UNITS µA µA V Ω Ω S V
3.0 0.12 0.17
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 150 90 30 MAX
Ta=25°C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 0.5A Vdd = 10V CONDITIONS MIN TYP 10 15 25 45 MAX
Ta=25°C UNITS ns ns ns ns
Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a ceramic PCB MIN TYP 250 MAX UNITS °C / W
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803
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
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DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
804
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
SWITCHING TIME vs. DRAIN CURRENT
≤
GATE-SOURCE VOLTAGE vs. GATE CHARGE
REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
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805
