For general amplification

www.DataSheet4U.com Composite Transistors XN0B301 (XN1B301) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 2 3 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 1 ■ Basic Part Number • 2SB0709A (2SB709A) + 2SD0601A (2SD601A) 10˚ 1.1+0.2 –0.1 0.65±0.15 0.30+0.10 –0.05 Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Rating −60 −50 −7 −100 −200 60 50 7 100 200 300 150 −55 to +150 Unit V V V mA mA V Tr2 1: Collector (Tr1) 2: Collector (Tr2) 3: Emitter (Tr2) EIAJ: SC-74A Marking Symbol: 4Q Internal Connection 3 4 5 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 4: Base (Tr2) Emitter (Tr1) 5: Base (Tr1) Mini5-G1 Package 1.1+0.3 –0.1 Tr1 V V mA mA mW °C °C 2 1 Note) The part number in the parenthesis shows conventional part number. Publication date: December 2003 SJJ00117CED 0.4±0.2 5˚ 1 XN0B301 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 VCE = −10 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCB = −10 V, IE = 1 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 160 − 0.3 80 2.7 Min −60 −50 −7 − 0.1 −100 460 − 0.5 Typ Max Unit V V V µA µA  V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = −2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 160 0.1 150 3.5 Min 60 50 7 0.1 100 460 0.3 Typ Max Unit V V V µA µA  V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT  Ta 500 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00117CED XN0B301 Characteristics charts of Tr1 IC  VCE −120 Ta = 25°C −160 −140 VCE = −10 V Ta = 25°C IC  I B −4.0 −3.5 −3.0 −2.5 −2.0 −1.5 −1.0 IB  VBE VCE = −10 V Ta = 25°C −100 Collector current IC (mA) Collector current IC (mA) −80 IB = −300 µA −250 µA −200 µA −150 µA −100 −80 −60 −40 −20 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −60 −40 −100 µA −50 µA −20 0 Base current IB (mA) −120 − 0.5 0 − 0.2 − 0.4 − 0.6 − 0.8 0 −2 −4 −6 −8 −10 −12 0 0 Collector-emitter voltage VCE (V) Base current IB (mA) Base-emitter voltage VBE (V) IC  VBE Collector-emitter saturation voltage VCE(sat) (V) −120 VCE = −10 V 25°C VCE(sat)  IC −10 IC / IB = 10 600 hFE  IC VCE = −10 V Forward current transfer ratio hFE −100 500 Ta = 75°C 400 25°C 300 −25°C Collector current IC (mA) −1 Ta = 75°C 25°C −25°C −80 Ta = 75°C −25°C −60 −10−1 −40 200 −10−2 −20 100 0 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −10−3 −1 −10 −102 −103 0 −10−1 −1 −10 −102 −103 Base-emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25°C 1 0 −10 −20 −30 −40 Collector-base voltage VCB (V) SJJ00117CED 3 XN0B301 Characteristics charts of Tr2 IC  VCE 50 Ta = 25°C IB = 160 µA 140 µA 160 140 VCE = 10 V Ta = 25°C IC  I B 10 VCE = 10 V Ta = 25°C IB  VBE Collector current IC (mA) 40 30 100 µA 80 µA 100 80 60 40 Base current IB (mA) 0 0.2 0.4 0.6 0.8 1.0 1.2 120 µA Collector current IC (mA) 8 120 6 20 60 µA 40 µA 4 10 20 µA 0 20 0 2 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage VCE (V) Base current IB (mA) Base-emitter voltage VBE (V) IC  VBE VCE = 10 V 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 10 hFE  IC 400 VCE = 10 V Ta = 75°C 25°C 240 −25°C 120 Forward current transfer ratio hFE 100 Collector current IC (mA) 320 1 80 Ta = 75°C −25°C 60 10−1 25°C Ta = 75°C −25°C 160 40 10−2 20 80 0 0 0.2 0.4 0.6 0.8 1.0 10−3 1 10 102 103 0 1 10 102 103 Base-emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25°C 1 0 10 20 30 40 Collector-base voltage VCB (V) 4 SJJ00117CED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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