GaAs MMIC Distributed Amplifier

10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD Features Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout XD1004-BD Mimix Broadband’s 10.0-40.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or www.DataSheet4U.com eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications. General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 175 mA +17 dBm -65 to +165 OC 2 -55 to MTTF Table 2 MTTF Table (2) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression Point (P1dB)1 Drain Bias Voltage (Vd) Supply Current (Id) (Vd=5.0V) (1) Measured using constant current. Units GHz dB dB dB dB dB dB dBm VDC mA Min. 10.0 - Typ. 7.0 12.0 17.0 +/-2.5 30.0 5.0 TBD +5.0 115 Max. 40.0 +5.5 145 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD Distributed Amplifier Measurements XD1004-BD Vd=See Legend, Id=See Legend 22 20 18 16 Gain (dB) XD1004-BD Vd=See Legend, Id=See Legend 0 -10 -20 -30 -40 -50 -60 -70 -80 14 12 10 8 6 4 2 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Frequency (GHz) Vd=3.0V, Id=100 mA Vd=4.0V, Id=120 mA Vd=5.0V, Id=115 mA Reverse Isolation (dB) 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Frequency (GHz) Vd=3.0V, Id=100 mA Vd=4.0V, Id=120 mA Vd=5.0V, Id=115 mA XD1004-BD Vd=See Legend, Id=See Legend 0 -5 -10 -15 -20 -25 -30 -35 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Frequency (GHz) Vd=3.0V, Id=100 mA Vd=4.0V, Id=120 mA Vd=5.0V, Id=115 mA Output Return Loss (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 XD1004-BD Vd=See Legend, Id=See Legend Input Return Loss (dB) 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Frequency (GHz) Vd=3.0V, Id=100 mA Vd=4.0V, Id=120 mA Vd=5.0V, Id=115 mA XD1004-BD Vd=5.0, Id=115 mA 10 10 XD1004-BD Vd=See Legend, Id=See Legend 9 8 9 8 7 Noise Figure (dB) Noise Figure (dB) 7 6 5 4 3 2 6 5 4 3 2 1 1 0 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 0 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Vd=3.0V, Id=100 mA Vd=4.0V, Id=120 mA Vd=5.0V, Id=115 mA Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD S-Parameters Typcial S-Parameter Data for XD1004-BD Vd=5.0 V Id=115 mA Frequency (GHz) 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 S11 (Mag) 0.266 0.327 0.377 0.424 0.433 0.412 0.409 0.408 0.425 0.443 0.429 0.393 0.351 0.302 0.223 0.109 0.082 0.177 0.308 0.414 0.488 0.545 0.563 0.551 0.514 0.473 0.430 0.371 0.324 0.268 0.156 0.111 0.478 0.733 0.784 0.807 0.819 0.818 0.814 0.786 0.760 S11 (Ang) -84.45 -91.33 -101.79 -115.11 -126.57 -135.70 -139.41 -144.24 -148.34 -158.58 -168.79 -178.03 174.97 165.61 159.38 167.48 -136.03 -104.33 -108.68 -122.58 -134.12 -149.53 -160.84 -170.23 -179.06 175.85 171.06 163.46 159.72 149.53 127.96 -1.01 -67.43 -116.92 -134.69 -147.18 -158.53 -165.72 -173.65 175.95 165.30 S21 (Mag) 2.817 3.905 5.149 6.898 8.344 9.429 10.013 9.785 9.206 8.446 7.880 7.447 7.231 7.260 7.405 7.721 7.961 8.048 8.049 7.843 7.618 7.229 6.955 6.762 6.558 6.405 6.263 6.137 6.172 6.316 6.684 6.681 6.830 4.453 2.919 1.993 1.406 1.022 0.808 0.657 0.665 S21 (Ang) 79.53 52.25 25.97 -6.89 -34.99 -64.24 -92.80 -120.19 -143.62 -169.45 172.65 156.62 141.98 126.80 111.79 91.59 73.39 54.71 35.90 16.71 -2.03 -24.45 -41.89 -59.40 -76.39 -93.81 -111.51 -134.09 -152.84 -172.87 163.95 134.93 98.74 49.92 24.62 4.19 -13.99 -29.20 -42.51 -60.82 -75.14 S12 (Mag) 0.0028 0.0029 0.0041 0.0054 0.0052 0.0036 0.0040 0.0027 0.0002 0.0024 0.0017 0.0019 0.0016 0.0029 0.0053 0.0082 0.0129 0.0169 0.0204 0.0216 0.0250 0.0282 0.0289 0.0302 0.0314 0.0327 0.0332 0.0336 0.0297 0.0267 0.0194 0.0087 0.0160 0.0280 0.0329 0.0385 0.0396 0.0364 0.0368 0.0399 0.0353 S12 (Ang) -71.28 -91.04 -105.02 -143.98 -164.64 167.86 162.52 128.36 108.13 -117.53 -170.59 131.67 -20.62 -73.56 -69.71 -83.98 -96.11 -112.12 -129.34 -137.60 -148.72 -160.89 -170.71 -176.93 175.02 168.19 159.36 145.03 132.80 118.95 98.26 27.65 -109.83 -154.33 -165.52 -178.14 163.90 161.74 160.26 150.91 138.11 S22 (Mag) 0.329 0.270 0.255 0.287 0.332 0.374 0.415 0.406 0.392 0.362 0.317 0.275 0.242 0.212 0.176 0.141 0.114 0.095 0.109 0.128 0.141 0.156 0.155 0.141 0.118 0.092 0.073 0.064 0.064 0.090 0.146 0.263 0.405 0.449 0.450 0.454 0.437 0.419 0.430 0.455 0.451 S22 (Ang) 75.78 55.13 34.10 3.96 -21.03 -46.40 -71.95 -94.54 -112.14 -132.18 -145.22 -156.40 -163.29 -171.23 -174.25 -174.45 -172.92 -163.22 -145.40 -147.14 -150.12 -159.55 -170.40 179.45 170.74 165.96 160.02 158.77 152.46 132.61 98.18 58.18 14.95 -29.19 -49.46 -64.80 -76.65 -83.59 -83.85 -95.96 -98.88 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD Mechanical Drawing 1.250 (0.049) XD1004-BD 1.070 (0.042) 1 2 1.102 (0.043) 0.0 0.0 3 1.000 0.820 (0.039) (0.032) (Note: Engineering designator is 22DSBA0423) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 0.775 mg. Bond Pad #1 (RF In) Bond Pad #2 (RF Out) Bond Pad #3 (Vd) Bias Arrangement XD1004-BD RF In 1 2 RF Out Bypass Capacitors - See App Note [2] 3 Vd Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. Bias is nominally Vd=5V, Id=115 mA. App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Graphs 1.00E+09 These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. XD1004-BD Vd=5.0 V Id=115 mA 1.00E+04 XD1004-BD Vd=5.0 V Id=115 mA 1.00E+08 1.00E+03 MTTF (hours) 1.00E+07 FITS 1.00E+02 1.00E+06 1.00E+01 1.00E+05 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) 1.00E+00 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) XD1004-BD Vd=5.0 V Id=115 mA 114 113 112 111 110 109 108 107 106 105 104 103 102 101 100 99 98 97 96 95 94 93 92 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) 200 190 180 170 XD1004-BD Vd=5.0 V Id=115 mA Rth (deg C/W) Tch (deg C) 160 150 140 130 120 110 100 55 65 75 85 95 105 115 125 Backplate Temperature (deg C) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Governm