GaAs MMIC Distributed Amplifier

0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout General Description Mimix Broadband’s 0.05-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 9.0 dB with a noise figure of 5.0 dB across the band. The device also includes 15.0 dB gain control and a +9.0 dBm P1dB compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect www.DataSheet4U.com and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +10.0 VDC 150 mA +0.3 VDC +18 dBm -65 to +165 OC -55 to MTTF Table 2 MTTF Table 2 (2) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (ΔS21) Gain Control Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB)1 Drain Bias Voltage (Vd) Gain Control Bias (Vg1) Gate Bias Voltage (Vg2) Supply Current (Id) (Vd=8.5V, Vg1=0.0V, Vg2=1.0V Typical) (1) Measured using constant current. Units GHz dB dB dB dB dB dB dB dBm VDC VDC VDC mA Min. 0.05 -2.0 - Typ. 14.0 14.0 9.0 +/-1.5 15.0 40.0 5.0 +9.0 +8.5 0.0 +1.0 120 Max. 50.0 +9.0 0.1 140 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Distributed Amplifier Measurements XD1002 Vd=8.5 V Id=120 mA ~70 Devices 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 0.05 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Max Median Mean Min Max 0 -10 Reverse Isolation (dB) XD1002 Vd=8.5 V Id=120 mA ~70 Devices -20 -30 -40 -50 -60 -70 -80 0.05 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Median Mean Min Gain (dB) XD1002 Vd=8.5 V Id=120 mA ~70 Devices 0 Output Return Loss (dB) XD1002 Vd=8.5 V Id=120 mA ~70 Devices 0 -5 -10 -15 -20 -25 -30 -35 Input Return Loss (dB) -5 -10 -15 -20 -25 -30 -35 -40 -45 0.05 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Max Median Mean -3sigma 0.05 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Max Median Mean Min XD1002 Vd=8.5 V Id=120 mA ~30 Devices 13 Output Power P1dB (dBm) 12 11 10 9 8 7 6 5 4 3 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Max Median Mean Min Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Distributed Amplifier Measurements (cont.) Sparams 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 0 5 10 12 11 10 Noise Figure & Gain from 3 samples; Vd=8.5V, Id=120mA, Vg1=0V, Vg2=1V S21 9 Noise Figure & Gain (dB) 8 7 6 5 4 3 S11 S22 2 15 20 25 30 35 40 45 Frequency (GHz) 50 55 60 65 70 1 0 18 20 22 24 26 28 30 Frequency (GHz) 32 34 36 38 40 42 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Mechanical Drawing 1.300 (0.051) 0.295 (0.012) 0.695 (0.027) 2 3 4 1.005 (0.040) 0.295 (0.012) 0.0 1 5 0.0 1.360 (0.054) (Note: Engineering designator is 25LN6DA0522) 1.950 (0.077) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.417 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vg2) Bond Pad #3 (Vd) Bond Pad #4 (RF Out) Bond Pad #5 (Vg1) Bias Arrangement Vg2 Vd Bypass Capacitors - See App Note [2] Vg2 Vd 2 3 4 RF Out RF Out RF In RF In 1 5 Vg1 Vg1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 App Note [1] Biasing - As shown in the bonding diagram, this device is operated with a single drain and gate voltage and it also includes a separate gain control voltage. Maximum gain bias is nominally Vd=8.5V, Vg1=0.0V, Vg2=1.0V, and Id=120mA. Gain can be adjusted by changing Vg1. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is 0.0V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Each DC pad (Vd and Vg1,2) need to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Table (TBD) These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius Rth MTTF Hours FITs C/W C/W C/W E+ E+ E+ E+ E+ E+ Bias Conditions: Vd=8.5V, Id=120 mA Device Schematic Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failur