GaAs MMIC Distributed Amplifier

18.0-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 01-May-05 D1001 Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout General Description Mimix Broadband’s 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect www.DataSheet4U.com and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 220 mA +0.3 VDC +15 dBm -65 to +165 OC -55 to MTTF Table 2 MTTF Table 2 (2) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (∆S21) Gain Control Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB) 1 Output Third Order Intercept Point (OIP3) 1 Drain Bias Voltage (Vd) Gain Control Bias (Vg) Supply Current (Id) (Vd=5.0V, Vg=0.0 Typical) (1) Measured using constant current. Units GHz dB dB dB dB dB dB dB dBm dBm VDC VDC mA Min. 18.0 -2.0 - Typ. 10.0 11.0 17.0 +/-1.0 30.0 40.0 5.0 +15.0 +24.0 +5.0 0.0 160 Max. 50.0 +5.5 +.01 190 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18.0-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 01-May-05 D1001 Distributed Amplifier Measurements XD1001 Vd=5.0 V Id=150 mA ~140 Devices 22 21 20 Gain (dB) Reverse Isolation (dB) XD1001 Vd=5.0 V Id=150 mA ~140 Devices 0 -10 -20 -30 -40 -50 -60 19 18 17 16 15 14 13 12 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0 -70 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0 Frequency (GHz) Max Median Mean -3sigma Max Frequency (GHz) Median Mean -3sigma XD1001 Vd=5.0 V Id=150 mA ~140 Devices 0 Output Return Loss (dB) XD1001 Vd=5.0 V Id=150 mA ~140 Devices 0 -5 -10 -15 -20 -25 -30 -35 18.0 Input Return Loss (dB) -5 -10 -15 -20 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0 Frequency (GHz) Max Median Mean -3sigma Max Frequency (GHz) Median Mean -3sigma XD1001 Vd=5.0 V Id=150 mA ~35 Devices 6.0 5.5 Output Power P1dB (dBm) XD1001 Vd=5.0 V Id=150 mA ~35 Devices 20 19 18 17 16 15 14 13 12 11 Noise Figure (dB) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 Frequency (GHz) Max Median Mean Min 10 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0 Frequency (GHz) Max Median Mean -3sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18.0-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 01-May-05 D1001 Distributed Amplifier Measurements (cont.) 30DA0445_0-75GHz_Sparameters 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 0 5 10 WP340 0445 Attenuation vs Vg for 36 to 41 GHz 36.013 37.012 38.011 39.01 40.009 41.008 40 38 36 34 32 30 S21 S22 S11 Attenuation (dB) 28 26 24 22 20 18 16 14 12 10 8 6 15 20 25 30 35 40 45 Frequency (GHz) 50 55 60 65 70 75 4 2 0 -2 -1.8 -1.6 -1.4 -1.2 -1 Vg (V) -0.8 -0.6 -0.4 -0.2 0 0.2 0445_5samples: OIP3 avg (dBm) vs. freq (GHz) Pin = -15dBm per Tone, Vg = -0.3 to 0V, Vd = 5V 30 25 , Vg1 (V)=-0.3, DeviceCoord=R1C1 , Vg1 (V)=-0.3, DeviceCoord=R1C4 , Vg1 (V)=-0.3, DeviceCoord=R2C2 , Vg1 (V)=-0.3, DeviceCoord=R3C3 20 , Vg1 (V)=-0.3, DeviceCoord=R4C1 , Vg1 (V)=-0.2, DeviceCoord=R1C1 OIP3 avg (dBm) , Vg1 (V)=-0.2, DeviceCoord=R1C4 , Vg1 (V)=-0.2, DeviceCoord=R2C2 , Vg1 (V)=-0.2, DeviceCoord=R3C3 , Vg1 (V)=-0.2, DeviceCoord=R4C1 15 , Vg1 (V)=-0.1, DeviceCoord=R1C1 , Vg1 (V)=-0.1, DeviceCoord=R1C4 , Vg1 (V)=-0.1, DeviceCoord=R2C2 , Vg1 (V)=-0.1, DeviceCoord=R3C3 , Vg1 (V)=-0.1, DeviceCoord=R4C1 10 , Vg1 (V)=0, DeviceCoord=R1C1 , Vg1 (V)=0, DeviceCoord=R1C4 , Vg1 (V)=0, DeviceCoord=R2C2 , Vg1 (V)=0, DeviceCoord=R3C3 , Vg1 (V)=0, DeviceCoord=R4C1 5 0 18 20 22 24 26 28 freq (GHz) 30 32 34 36 38 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18.0-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 01-May-05 D1001 Mechanical Drawing 1.300 (0.051) 0.396 (0.016) 2 3 0.922 (0.036) 0.379 (0.015) 0.0 1 4 0.0 1.555 (0.061) (Note: Engineering designator is 30DA0445) 1.950 (0.077) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.572 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vd) Bond Pad #3 (RF Out) Bond Pad #4 (Vg) Bypass Capacitors - See App Note [2] Vd Bias Arrangement 2 Vd 3 RF Out RF Out RF In RF In 1 4 Vg Vg Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18.0-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 01-May-05 D1001 App Note [1] Biasing - As shown in the bonding diagram, this device is operated with a single drain and a gain control voltage. Maximum gain bias is nominally Vd=5.0V, Vg=0V, Id=160mA. Gain can be adjusted by changing Vg. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is 0.0V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Table (TBD) These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius Rth MTTF Hours FITs C/W C/W C/W E+ E+ E+ E+ E+ E+ Bias Conditions: Vd=5.0V, Id=160 mA Device Schematic Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 18.0-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 01-May-05 D1001 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do n