Surface Mount P-Channel Enhancement Mode MOSFET

www.DataSheet4U.com WT4433AM Surface Mount P-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT -6 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE D 1 3 S S G 8 7 D 2 D 6 S D 4 5 Features: *Super high dense cell design for low RDS(ON) R DS(ON) <35 mΩ @VGS = -10V R DS(ON) <55 m Ω@VGS = -4.5V *Rugged and Reliable *SO-8 Package 1 SO-8 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -30 Unite V V A A A W C/W C ±20 -6 -30 -1.7 2.5 50 -55 to 150 Device Marking WT4433AM=STM4433A http://www.weitron.com.tw WEITRON 1/6 29-Jun-05 www.DataSheet4U.com WT4433AM Electrical Characteristics Static (2) Characteristic (TA =25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ -1.9 - Max -3.0 + -100 -1 35 55 Unit V V nA uA Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current + VDS=0V, VGS=-20V Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-10V, ID=-5.8A VGS=-4.5V, ID=-2.0A On-State Drain Current VDS=-5V, VGS=-10V Forward Transconductance VDS=-15V, ID=-5.8A -30 -1 - -20 RDS (on) ID(on) gfs 21 40 mΩ 8.5 - A S - Dynamic (3) Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ Ciss Coss Crss - 920 270 170 PF Switching (3) Turn-On Delay Time VD=-15V, V GEN =-10V, ID=-1A, R GEN =6 Ω Rise Time VD=-15V, V GEN =-10V, ID=-1A, R GEN =6 Ω Turn-Off Time VD=-15V, V GEN =-10V, ID=-1A, R GEN =6 Ω Fall Time VD=-15V, V GEN =-10V, ID=-1A, R GEN =6 Ω Total Gate Charge VDS=-15V, VGS=-10V, ID=-5.8A VDS=-15V, VGS=-4.5V, ID=-5.8A Gate-Source Charge VDS=-15V, VGS=-10V, ID=-5.8A Gate-Drain Charge VDS=-15V, VGS=-10V, ID=-5.8A Drain-Source Diode Forward Voltage VGS=0V, IS=-1.7A td(on) tr td(off ) tf Qg - 8.6 35.3 36.9 36.3 - nS nS nS nS - - 17.5 9.4 2.9 4.8 -0.77 nc nc nc V Qgs Qgd -1.2 VSD Note: 1. Surface Mounted on FR4 Board t ≤ 10sec. 2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%. 3. Guaranteed by Design, not Subject to Production Testing. http://www.weitron.com.tw WEITRON 2/6 29-Jun-05 www.DataSheet4U.com WT4433AM 20 16 12 8 4 -VGS=2V -VGS=4.5V -VGS=10V -VGS=4V -VGS=3.5V WEITRON 25 20 15 10 125 C 5 0 25 C -55 C 0.0 0.8 1.6 2.4 3.2 4.0 4.8 -ID ,DRAIN CURRENT(A) -VGS=3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , DRAIN CURRENT(A) -VDS , DRAIN-TO-SOURCE VOLTAGE(V) -VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.1. Output Characteristics 1500 1250 1000 750 250 0 R DS(ON) , ON-RESISTANCE(Ω) (Normalived) C ,CAPACITANCE( PF) FIG.2 Transfer Characteristics 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -55 VGS = -10V ID= -5.8A Ciss Coss Crss 0 5 10 15 20 25 30 -25 0 25 50 75 100 125 -VDS , DRAIN-TO-SOURCE VOLTAGE(V) FIG.3 Capacitance 1.3 1.2 1.1 1.0 0.8 0.6 0.4 -50 -25 BVDSS ,NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE(V) GATE-SOURCE THRESHOLD VOLTAGE(V) FIG.4 On-Resistance Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj , DRAIN CURRENT(˚C) VDS =VGS ID = -250uA ID = -250uA Vth ,NORMALIZED 0 25 50 75 100 125 150 T j ,JUNCTION TEMPERATURE( C) T j ,JUNCTION TEMPERATURE( C) FIG.5 Gate Threshold Variation with Temperature FIG.6 Breakdown Voltage Variation with Temperature http://www.weitron.com.tw WEITRON 3/6 29-Jun-05 www.DataSheet4U.com WT4433AM 12 -IS ,SOURCE-DRAIN CURRENT(A) 15 gFS ,TRANSCONDUCTANCE(S) 20.0 10.0 WEITRON 9 6 3 VDS = -15V 0 0 5 10 15 20 1 0.4 0.6 0.7 0.9 1.1 1.3 -IDS ,DRAIN-SOURCE CURRENT(A) -VSD ,BODY DIODE FORWARD VOLTAGE(V) FIG.7 Transconductance Variation with Drain Current -VGS ,GATE TO SOURCE VOLTAGE(V) 10 -ID , DRAIN CURRENT(A) 8 6 4 2 0 FIG.8 Body Diode Forward Voltage Variation with Source Current 50 VDS = -15V ID = -5.8A RDS(ON)Limit 10 10ms 100ms 1 1s DC 0.1 0.03 0.1 VGS= -10V Single Pulse TA=25 C 1 10 30 50 0 3 6 9 12 15 18 21 24 Q g ,TOTAL GATE CHARGE(nC) -VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge -VDD FIG.10 Maximum Safe Operating Area ton toff tr 90% V IN D VGS R GEN G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVERTED 90% S V IN 50% 10% 50% INVERTED PULSE WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms http://www.weitron.com.tw WEITRON 4/6 29-Jun-05 www.DataSheet4U.com WT4433AM 2 r(t) ,NORMALIZED TRANSIENT 1 THERMAL RESISTANCE Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 1. R θjA (t)=r (t) * Rθ j A 2. Rθ jA=See Datasheet 3. TJM-TA = PDM* R θJA(t) 4. Duty Cycle, D=t1/t2 10 100 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE http://www.weitron.com.tw WEITRON 5/6 29-Jun-05 www.DataSheet4U.com WT4433AM SO-8 Package Outline Dimensions Unit:mm 1 L θ E1 D 7 (4X) A C 7(4X) 2A A1 e B eB SYMBOLS MILLIMETERS MAX MIN A A1 B C D E1 eB e L θ 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 8 0 http://www.weitron.com.tw WEITRON 6/6 29-Jun-05