Surface Mount N-Channel Enhancement Mode MOSFET

www.DataSheet4U.com WT4410M Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 10 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE D 1 3 S S 8 7 D 2 D 6 S Features: *Super high dense cell design for low RDS(ON) R DS(ON) <11 mΩ @VGS =10V R DS(ON) <15 m Ω@VGS =4.5V *Rugged and Reliable *SO-8 Package D Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 30 Unite V V A A A W C/W C G 4 5 1 SO-8 + -20 10 30 2.3 2.5 50 -55 to 150 Device Marking WT4410M=SDM4410 http://www.weitron.com.tw WEITRON 1/6 01-Jul-05 www.DataSheet4U.com WT4410M Electrical Characteristics Static (2) Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ 1.5 - Max 3 + -100 1 13.5 20 Unit V V nA uA mΩ Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=250 uA Gate-Source Leakage Current + VDS=0V, VGS=-16V Zero Gate Voltage Drain Current VDS=24V, VGS=0V Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=5A On-State Drain Current VDS=10V, VGS=10A Forward Transconductance VDS=10V, ID=20A 30 1 - 40 rDS (on) 11 15 ID(on) gfs 18 - A S - Dynamic (3) Input Capacitance VDS=15V, VGS=0V, f=1MHZ Output Capacitance VDS=15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHZ Ciss Coss Crss - 1375 670 200 PF Switching (3) Turn-On Delay Time VGS =10V,VDD =15V, I D =-1A, R GEN=6Ω Rise Time VGS =10V,VDD =15V, I D =-1A, R GEN=6Ω Turn-Off Time VGS =10V,VDD =15V, I D =-1A, R GEN=6Ω Fall Time VGS =10V,VDD =15V, I D =-1A, R GEN=6Ω Total Gate Charge VDS=10V, ID=10A, VGS =10V VDS=10V, ID=10A, V GS =4.5V Gate-Source Charge VDS=10V, ID=10A, V GS =10V Gate-Drain Charge VDS=10V, ID=10A, V GS =10V Drain-Source Diode Forward Voltage VGS=0V, IS=2.3A td(on) tr td(off ) tf Qg - 30 32 132 30 - nS nS nS nS nc - 50 24 40 20 8.2 5.3 0.76 Qgs Qgd 1.1 nc nc V VSD Note: 1. Surface Mounted on FR4 Board t < 10sec. _ < 300us, Duty Cycle < 2%. _ _ 2. Pulse Test : PW 3. Guaranteed by Design, not Subject to Production Testing. WEITRON http://www.weitron.com.tw 2/6 01-Jul-05 www.DataSheet4U.com WT4410M 25 VGS =10,9,8,7,6,5,4V ID , DRAIN CURRENT(A) ID ,DRAIN CURRENT(A) WE IT R ON 25 20 15 10 5 -55 C 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Tj =125 C 20 15 10 5 0 25 C VGS =3V 0 0.5 1 1.5 2 2.5 3 VDS , DRAIN-TO-SOURCE VOLTAGE(V) VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.1. Output Characteristics 1500 1200 900 600 300 0 0 5 10 15 20 Ciss Coss Crss 25 30 R DS(ON) , ON-RESISTANCE(Ω) C ,CAPACITANCE( P F) FIG.2 Transfer Characteristics 0.030 0.025 0.020 0.015 0.010 0.005 0 0 5 10 15 -55 C Tj =125 C 25 C VGS =10V 20 VDS , DRAIN-TO-SOURCE VOLTAGE(V) FIG.3 Capacitance 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 BVDSS ,NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE(V) GATE-SOURCE THRESHOLD VOLTAGE(V) FIG.4 On-Resistance Variation with Drain Current and Temperature 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID , DRAIN CURRENT(A) VDS =VGS ID =250uA ID =-250uA Vth ,NORMALIZED T j ,JUNCTION TEMPERATURE( C) T j ,JUNCTION TEMPERATURE( C) FIG.5 Gate Threshold Variation with Temperature FIG.6 Breakdown Voltage Variation with Temperature http://www.weitron.com.tw WEITRON 3/6 01-Jul-05 www.DataSheet4U.com WT4410M 20 15 10 5 VDS =15V 0 0 5 10 15 20 IS ,SOURCE-DRAIN CURRENT(A) WE IT R ON 40.0 25 gFS ,TRANSCONDUCTANCE(S) 10.0 1 0.4 0.6 0.8 1.0 1.2 1.4 IDS ,DRAIN-SOURCE CURRENT(A) V SD ,BODY DIODE FORWARD VOLTAGE(V) FIG.7 Transconductance Variation with Drain Current VGS ,GATE TO SOURCE VOLTAGE(V) FIG.8 Body Diode Forward Voltage Variation with Source Current 40 ID , DRAIN CURRENT(A) 10 8 6 4 2 0 VDS =10V ID =40A (O 10 RDS L N) im it 10m 100 ms s 1 1 DC 1s 0.1 0.03 0.1 VDS=10V Single Pulse TC =25 C 1 10 30 50 0 5 10 15 20 25 30 35 40 Q g ,TOTAL GATE CHARGE(nC) VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge V DD FIG.10 Maximum Safe Operating Area ton toff tr 90% V IN D VG S R GE N G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% PULS E WIDTH FIG.11 Switching Test Circuit FIG.12 Switching Waveforms http://www.weitron.com.tw WEITRON 4/6 01-Jul-05 www.DataSheet4U.com WT4410M WE IT R ON 10 r(t) ,NORMALIZED TRANSIENT THERMAL RESISTANCE Duty Cycle=0.5 1 0.2 0.1 P DM t1 t2 0.1 0.05 0.02 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 1. R θjA (t)=r (t) * Rθ j A 2. Rθ jA=See Datasheet 3. TjM-TA = PDM* Rθ jA(t) 4. Duty Cycle, D=t1/t 2 10 100 1000 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE http://www.weitron.com.tw WEITRON 5/6 01-Jul-05 www.DataSheet4U.com WT4410M SO-8 Package Outline Dimensions Unit:mm 1 L θ E1 D 7 (4X) A C 7(4X) 2A A1 e B eB SYMBOLS MILLIMETERS MAX MIN A A1 B C D E1 eB e L θ 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 8 0 http://www.weitron.com.tw WEITRON 6/6 01-Jul-05