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Part Number |
VSC830 |
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Manufacturer |
Vitesse Semiconductor |
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Semiconductor DataSheet |
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DataSheet View |
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www.DataSheet4U.com
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC830
Features
• Dual 2x2 Crosspoint Switch • 2.7Gb/s NRZ Data Bandwidth, 2.7GHz Signal Bandwidth • PECL/TTL-Compatible Control Inputs • PECL-Compatible High-Speed I/O
2.7Gb/s Asynchronous Dual 2x2 Crosspoint Switch
• 50Ω Source Terminated Output Driver and Programmable Input Terminations • Single 3.3V Supply, 1W Typical Dissipation • Power-Down Capability for Unused Outputs • Compact 44-Pin PQFP, 10x10mm Package
General Description
The VSC830 is a monolithic dual 2x2 asynchronous crosspoint switch, designed for critical signal path control and buffering applications, such as loop-back, protection switching, and multi-channel backplane driver/receivers. Signal path delay is tightly matched between each output channel to eliminate the need for delay path compensation when switching between signal sources. The crosspoint function is based on a multiplexer tree architecture. Each 2x2 switch can be considered as a pair of 2:1 multiplexers that share the same inputs. The signal path through each switch is fully differential and delay matched. The signal path is unregistered, so there are no restrictions on the phase, frequency, or signal pattern at each input. Unused outputs can be independently powered off, thereby eliminating power on unused sections (see Design Guide section in this data sheet). The switch control inputs can be configured to be compatible with PECL or TTL levels. The high-speed input and output levels are nominally PECL compatible and capable of interfacing with a wide range of termination schemes.
VSC830 Symbol Diagram
S1,S2 A1 A2 S1,S2 A1 A2 Y1 Y2 Y1 Y2
G52192-0, Rev 4.0 05/23/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 1
VITESSE
SEMICONDUCTOR CORPORATION
2.7Gb/s Asynchronous Dual 2x2 Crosspoint Switch
Data Sheet
VSC830
Functional Block Diagram
PEMODE S1A A1A+ A1ATERM_ENABLE_A
SL
VCC VCCP1A
0
Y1A Y1AN VEE1A VCCP2A
1
S2A
SL
A2A+ A2A-
0
Y2A Y2AN VEE2A
1
S1B A1B+ A1BSL
VCCP1B
0
Y1B Y1BN VEE1B VCCP2B
SL
1
TERM_ENABLE_B S2B
0
A2B+ A2B-
Y2B Y2BN VEE2B
1
Page 2
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com
G52192-0, Rev 4.0 05/23/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC830
Functional Description
2.7Gb/s Asynchronous Dual 2x2 Crosspoint Switch
Select As shown in Figure 1, each output can be treated as a 2:1 multiplexer, with the A1 and A2 inputs common to both multiplexers. The select input S1 independently controls the state of the multiplexer that drives output Y1, and select input S2 independently controls the output of Y2. Figure 1: Select Functional Block Diagram
S1 S2
A1 A2
Y1 Y2
Table 1 specifies the function of the select inputs.
Table 1: Select Function S1
0 1 0 1
S2
0 0 1 1
Y1
A1 A2 A1 A2
Y2
A1 A1 A2 A2
MODE The interface level of the select pins, S1 and S2, can be programmed to either TTL or PECL levels by shorting the MODE pin to either VCC or VEE. Note that the MODE pin must be tied to either VCC or VEE. The function of MODE is specified in Table 2. Table 2: MODE Function MODE
VEE VCC
S1, S2
TTL PECL
G52192-0, Rev 4.0 05/23/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 3
VITESSE
SEMICONDUCTOR CORPORATION
2.7Gb/s Asynchronous Dual 2x2 Crosspoint Switch
Data Sheet
VSC830
Power-Down Power to each output stage is provided through VCC, VCCP, and VEE. VCC is common to all outputs. To power off unused outputs, tie the respective VEE and VCCP pin to VCC, as shown in Figure 2. Figure 2: Power-Down Mode Example
VCC
VCCP1A
VCCP2A
VCCP1B
VCCP2B
VEE1A “ON”
VEE2A “ON”
VEE1B “OFF”
VEE2B “OFF”
Minimum power configuration requires output channel 1A active, so power must be applied to VCCP1A and VEE1A at all times.
Programmable input termination Across each differential input (from the + input to the - input) of the VSC830 is a switched 100Ω termination resistor. Using the TERM_ENABLE pin, the termination can be optionally disabled. To enable the input termination, connect the respective TERM_ENABLE pin to VCC. To disable the internal termination, connect TERM_ENABLE to VEE. If unconnected, the TERM_ENABLE pin will self-bias to VEE and disable the internal termination. Independent termination controls are provided for the “A” and “B” switches.
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© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com
G52192-0, Rev 4.0 05/23/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC830
AC Characteristics
Table 3: AC Timing Symbol
FRATE FBW TSKW TCON tR, tF tjP Signal path data rate Signal path bandwidth (-3dB) Channel to channel delay skew Switch configuration setup time(1) High-speed output rise/fall times, 20% to 80% Signal path added jitter, peak-peak(1)
23 (2)
2.7Gb/s Asynchronous Dual 2x2 Crosspoint Switch
Parameter
Min
Typ
Max
2.7 2.7
Units
Gb/s GHz ps ns ps ps
50 1 150 40
NOTES: (1) Tested on a sample basis only, with 2 -1 PRBS data, input signal rise/fall time < 150ps. Value stated in table is added to measurement system jitter. (2) Input signal rise/fall time < 150ps, measured using an alternating 1, 0 pattern.
DC Characteristics (All characteristics are over the specified operating conditions)
Table 4: Power Supply
Symbol
ICC PD PT
Parameter
Total VCC(P) supply current Power dissipation per output (Y1A±, Y2A±, Y1B±, Y2B±) Total chip power (all outputs powered on)
Min
Typ
Max
350 300 1.2
Units
mA mW W
Conditions
NOTE: Specified with outputs terminated, 100Ω between true and complement, VCC = 3.45V.
Table 5: Select Input Levels—TTL Mode
Symbol
VIH VIL IIH IIL
Parameter
Input HIGH voltage (TTL) Input LOW voltage (TTL) Input HIGH current (TTL) Input LOW current (TTL)
Min
2.0
Typ
Max
0.8 500 -500
Units
V V µA µA
Conditions
VIN = 2.4V VIN = 0.5V
Table 6: Select Input Levels—PECL Mode
Symbol
VIH VIL IIH IIL
Parameter
Input HIGH voltage (PECL) Input LOW voltage (PECL) Input HIGH current (PECL) Input LOW current (PECL)
Min
VCC1.0
Typ
Max
Units
V
Conditions
VCC1.6 500 -500
V µA µA VIN = 2.5V VIN = 1.5V
Table 7: Control Inputs
Symbol
RPEMODE
Parameter
PEMODE pin impedance
Min
Typ
3100
Max
Units
Ω
Conditions
G52192-0, Rev 4.0 05/23/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com
Page 5
VITESSE
SEMICONDUCTOR CORPORATION
2.7Gb/s Asynchronous Dual 2x2 Crosspoint Switch
Table 8: “A” Input Levels (Differential PECL)
Data Sheet
VSC830
Min
200 VCC1.7
Symbol
VID VICM
Parameter
Input differential voltage Input common-mode voltage
Typ
Max
1000 VCC0.9
Units
mV V
Conditions
See Note 1
NOTE: (1) Peak-to-peak swing of each side of the differential input.
Table 9: “Y” Output Levels (Differential PECL)
Symbol
VOD1 VOD2 VOCM
Parameter
Output differential voltage (Data) Output differential voltage (Clock) Output common-mode voltage
Min
400 400 VCC1.6
Typ
700 550
Max
1000 850 VCC1.0
Units
mV mV V
Conditions
See Note 1 See Note 2
NOTES: (1) Peak-peak swing of each side of the differential output. 223-1 PRBS data. (2) Peak-to-peak swing of each side of the differential output. Alternating 1, 0 pattern.
Absolute Maximum Ratings
Power Supply Voltage (VCC) Potential to GND ..............................................................................-0.5V to +4.0V TTL Input Voltage Applied ................................................................................................... -0.5V to VCC +0.5V ECL Input Voltage Applied .................................................................................................... -0.5V to VCC +0.5V Output Current (IOUT) .................................................................................................................................... 50mA Case Temperature Under Bias (TC) .............................................................................................-55oC to + 125oC Storage Temperature (TSTG)........................................................................................................-65oC to + 150oC
NOTE: (1) Caution: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing permanent damage. Functionality at or exceeding the values listed is not implied. Exposure to these values for extended periods may affect device reliability.
Operating Conditions
Supply voltage (VEE) .......................................................................................................................................... 0V Supply voltage (VCC) ............................................................................................................................ +3.3V ±5% Supply voltage (VCCP) .......................................................................................................................... +3.3V ±5% Operating Range(1) (T) ..................................................................................................................... 0oC to +85oC
NOTE: (1) Lower limit of specification is ambient temperature and upper limit is case temperature.
ESD Ratings
Proper ESD procedures should be used when handling this product. The VSC830 is rated to the following ESD voltages based on the human body model: 1. All pins are rated at or above 1500V.
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© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Cama |