CoolMOS Power MOSFET

www.DataSheet4U.com VHM40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base K 12 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ Ω 1) L4 L6 L9 P 18 R 18 K 13 K10 T 18 V 18 X 18 Pin arangement see outlines F10 Preliminary data sheet NTC MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ±20 38 25 6 1.8 1 V V A A V/ns J mJ Features ● ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 70 mΩ 3.5 60 5.5 V Applications ● ● ● ● ● RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 3 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 50 A 220 55 125 30 95 100 10 0.9 Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating 25 µA µA 100 nA nC nC nC ns ns ns ns 1.1 V VGS= 10 V; VDS = 380 V; ID = 25 A; RG = 1.8 Ω (reverse conduction) IF = 20 A; VGS = 0 V per MOSFET 0.45 K/W Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated 1) CoolMOS is a trademark of Infineon Technologies AG. IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 1-2 238 VHM40-06P1 Reverse diodes (FRED) Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 18.5 12.0 A A Dimensions in mm (1 mm = 0.0394") Symbol VF IRM t rr RthJC RthJH Conditions IF = 15 A; TVJ = 25°C TVJ = 125°C Characteristic Values min. typ. max. 2.58 1.8 7 70 7 ns 3.5 K/W K/W 2.64 V V A IF = 10 A; diF/dt = 400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 µm) Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kΩ K Module Symbol TVJ Tstg VISOL Md a IISOL ≤ 1 mA; 50/60 Hz; t = 1 s mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 °C °C V~ Nm lb.in. m/s2 Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 2-2 238