Flow PIM 2

V23990-P767-A-PM taget datasheet flow PIM 2 Features ● 3~rectifier,BRC,Inverter, NTC ● Very Compact housing, easy to route ● IGBT4/ EmCon4 technology for low saturation losses and improved EMC behavior 1200V/35A flowPIM2 housing Target Applications ● Motor Drives ● Power Generation Schematic www.DataSheet4U.com Types ● V23990-P767-A-PM Maximum Ratings Parameter Symbol Condition Value Unit Input Rectifier Diode Repetitive peak reverse voltage Forward current per diode Surge forward current I2t-value Power dissipation per Diode Maximum junction temperature VRRM IFAV IFSM tp=10ms I2t Ptot Tjmax Tj=Tjmax Th=80°C Tc=80°C Tj=25°C 800 58 A2s W °C DC current Th=80°C Tc=80°C 1600 40 V A A 400 150 Transistor Inverter Collector-emitter break down voltage DC collector current Repetitive peak collector current Power dissipation per IGBT Gate-emitter peak voltage Short circuit ratings* Maximum junction temperature VCE IC Icpuls Ptot VGE tSC VCC Tjmax Tj≤150°C VCC Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C 1200 39 V A A W V µs V °C 105 112 ±20 10 800 175 * It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits copyright Tyco Electronics 1 Revision: 1 V23990-P767-A-PM taget datasheet Maximum Ratings Parameter Symbol Condition Value Unit Diode Inverter Peak Repetitive Reverse Voltage DC forward current Repetitive peak forward current Power dissipation per Diode www.DataSheet4U.com Maximum junction temperature VRRM IF IFRM Ptot Tjmax Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C 1200 40 V A A W °C 70 83 175 Transistor BRC Collector-emitter break down voltage DC collector current Repetitive peak collector current Power dissipation per IGBT Gate-emitter peak voltage Short circuit ratings* Maximum junction temperature VCE IC Icpuls Ptot VGE tSC VCC Tjmax Tj≤150°C VCC Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Th=80°C Tc=80°C 1200 34 V A A W V µs V °C 75 109 ±20 10 800 175 * It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits BRC inverse diode Peak Repetitive Reverse Voltage DC forward current Repetitive peak forward current Power dissipation per Diode Maximum junction temperature VRRM IF IFRM Ptot Tjmax Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Th=80°C Tc=80°C 1200 40 V A A W °C 400 37 175 copyright Tyco Electronics 2 Revision: 1 V23990-P767-A-PM taget datasheet Maximum Ratings Parameter Symbol Condition Value Unit Diode BRC Peak Repetitive Reverse Voltage DC forward current Repetitive peak forward current Power dissipation per Diode www.DataSheet4U.com Maximum junction temperature VRRM IF IFRM Ptot Tjmax Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Th=80°C Tc=80°C 1200 30 V A A W °C 50 62 175 Thermal properties Storage temperature Operation temperature Tstg Top -40…+125 -40…+150 °C °C Insulation properties Insulation voltage Creepage distance Clearance Vis t=1min 4000 min 12,7 min 12,7 Vdc mm mm copyright Tyco Electronics 3 Revision: 1 V23990-P767-A-PM taget datasheet Characteristic Values Parameter Symbol VGE(V) or VGS(V) Conditions Vr(V) or VCE(V) or VDS(V) IC(A) or IF(A) T(°C) or ID(A) Min Value Typ Max Unit Input Rectifier Bridge Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) Reverse leakage current Thermal resistance chip to heatsink per chip VF Vto rt Ir RthJH RthJC Thermal grease thickness≤50um λ = 0,61 W/mK 1600 25 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=145°C 1 0,9 1,21 1,1 0,83 0,0066 0,05 1,1 1,20 K/W V V Ohm mA www.DataSheet4U.com Thermal resistance chip to case per chip Transistor Inverter Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off Gate-emitter leakage current Integrated Gate resistor Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy loss per pulse Turn-off energy loss per pulse Input capacitance Output capacitance Reverse transfer capacitance Gate charge Thermal resistance chip to heatsink per chip Thermal resistance chip to case per chip VGE(th) VCE(sat) ICES IGES Rgint td(on) tr td(off) tf Eon Eoff Cies Coss Crss QGate RthJH RthJC Thermal grease thickness≤50um λ = 0,61 W/mK ±15 Tj=25°C f=1MHz 0 25 Tj=25°C Rg=tbd Ω Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=VGE 15 0 20 1200 0 0,0012 35 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 5 1,6 5,8 1,85 6,5 2,1 0,005 120 V V mA nA Ohm ns ns ns ns mWs mWs nF nF nF nC K/W K/W tbd tbd tbd tbd tbd tbd 1,95 0,155 0,115 tbd 0,77 Diode Inverter Diode forward voltage Reverse leakage current Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak rate of fall of reverse recovery current Reverse recovery energy Thermal resistance chip to heatsink per chip Thermal resistance chip to case per chip VF Irm IRRM trr Qrr di(rec)max /dt Erec RthJH RthJC Thermal grease thickness≤50um λ = 0,61 W/mK Tj=25°C Tj=125°C tbd 35 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1,35 1,7 2,05 7,7 V mA A ns mC A/ms mWs K/W K/W tbd tbd tbd tbd tbd 1,07 copyright Tyco Electronics 4 Revision: 1 V23990-P767-A-PM taget datasheet Characteristic Values Parameter Symbol VGE(V) or VGS(V) Conditions Vr(V) or VCE(V) or VDS(V) IC(A) or IF(A) T(°C) or ID(A) Min Value Typ Max Unit Transistor BRC Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off Gate-emitter leakage current Integrated Gate resistor VGE(th) VCE(sat) ICES IGES Rgint td(on) tr td(off) tf Eon Eoff Cies Coss Crss QGate RthJH RthJC Thermal grease thickness≤50um λ = 0,61 W/mK 15 Tj=25°C f=1MHz 0 25 Tj=25°C R=tbdΩ Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=VGE 15 0 20 1200 0 0,00085 25 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 5 1,6 5,8 1,85 6,5 2,1 0,0024 120 V V mA nA Ohm ns ns ns ns mWs mWs nF nF nF nC K/W K/W www.DataSheet4U.com Rise time Turn-on delay time tbd tbd tbd tbd tbd tbd 1,43 0,115 0,085 tbd 0,87 Turn-off delay time Fall time Turn-on energy loss per pulse Turn-off energy loss per pulse Input capacitance Output capacitance Reverse transfer capacitance Gate charge Thermal resistance chip to heatsink per chip Thermal resistance chip to case per chip BRC inverse diode Diode forward voltage Reverse leakage current Thermal resistance chip to heatsink per chip Thermal resistance chip to case per chip VF Ir RthJH RthJC Thermal foil thickness=76um Kunze foil KU-ALF5 600 10 Tj=25°C Tj=125°C Tj=25°C Tj=125°C tbd tbd tbd 1,87 V uA K/W K/W Diode BRC Diode forward voltage Reverse leakage current Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of reverse recovery current Reverse recovery energy Thermal resistance chip to heatsink per chip Thermal resistance chip to case per chip VF Ir IRRM trr Qrr di(rec)max /dt Erec RthJH RthJC Thermal foil thickness=76um Tj=25°C Tj=125°C Rgon=tbd Ω Rgon=tbd Ω Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C tbd tbd tbd tbd tbd tbd tbd tbd tbd 1,53 25 Tj=25°C Tj=125°C 1,35 1,7 2,05 V mA A ns mC A/ms mWs K/W K/W NTC Thermistor Rated resistance Deviation of R100 Power dissipation given Epcos-Type B-value R25 DR/R P B(25/100) Tol. ±3% Tol. ±5% R100=1503Ω Tj=25°C Tc=100°C Tj=25°C Tj=25°C 20,9 22 2,9 210 3980 23,1 kOhm %/K mW K copyright Tyco Electronics 5 Revision: 1 V23990-P769-A-PM target datasheet Package Outline and Pinout Outline www.DataSheet4U.com Pinout copyright Tyco Electronics 6 Revision: 1 V23990-P767-A-PM taget datasheet PRODUCT STATUS DEFINITIONS Datasheet Status Product Status Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. This datasheet contains preliminary data, and supplementary data may be published at a later date. Tyco Electronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. This datasheet contains final specifications. Tyco Electronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Target www.DataSheet4U.com Formative or In Design Preliminary First Production Final Full Production DISCLAIMER Tyco Electronics reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Tyco Electronics does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Tyco Electronics products are not authorised for use as critical components in life support devices or systems without the express written approval of Tyco Electronics. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause