ADJUSTABLE PRECISION SHUNT REGULATORS

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1093 ADJUSTABLE PRECISION SHUNT REGULATORS DESCRIPTION The µPC1093 are adjustable precision shunt regulators with guaranteed thermal stability. The output voltage can be set to any value between reference voltage (2.495 V) and 36 V by two external resistors. These ICs can apply to error amplifier of switching regulators. FEATURES • High Accuracy • Low Temperature Coefficient • Adjustable Output Voltage by two External Resistors • Low Dynamic Impedance VREF = 2.495 V ± 2 % ∆VREF/∆T ≤ 100 ppm/°C VREF ≤ VO ≤ 36 V | ZKA | = 0.1 ΩTYP. ORDERING INFORMATION Part Number Package 3-pin plastic SIP (TO-92) 8-pin plastic SOP (225 mil) Power mini mold (SOT-89) 5-pin plastic mini mold (SC-74A) µPC1093J µPC1093G µPC1093T µPC1093TA The information in this document is subject to change without notice. Document No. G10634EJ5V0DS00 (5th edition) (Previous No. IC-1791) Date Published September 1998 N CP(K) Printed in Japan The mark shows major revised points. © 1986 µPC1093 EQUIVALENT CIRCUIT K R5 R6 Q6 Q12 Q13 Q14 Q15 Q16 Q17 C2 REF Q1 Q5 Q2 Q7 R1 R7 D1 C1 R2 Q3 R3 Q8 Q4 R4 R8 Q9 Q10 R9 R10 Q11 A PIN CONFIGURATION (Marking Side) 3-pin plastic SIP (TO-92) • µPC1093J 8-pin plastic SOP (225 mil) • µPC1093G K 1 2 3 4 8 7 6 5 REF NC A NC 1 2 3 NC NC NC 1 : REF 2:A 3:K Power mini mold (SOT-89) • µPC1093T A 5-pin plastic mini mold (SC-74A) • µPC1093TA NC 5 A 4 REF : Reference A : Anode K : Cathode NC : No Connection 1 K 2 3 A REF 1 2 REF A 3 K 2 µPC1093 ABSOLUTE MAXIMUM RATING (TA = 25 °C, unless otherwise specified.) Parameter Cathode Voltage Cathode Current Cathode-Anode Reverse Current Reference Voltage Reference Input Current Reference-Anode Reverse Current Power Dissipation Symbol VKA IK –IK VREF IREF –IREF PT Ratings 37 150 –100 7 50 –10 700 480 400/2 000Note 1 180/510Note 2 TA Tstg –20 ~ +85 –65 ~ +150 °C °C Unit V mA mA V µA mA mW µPC1093J µPC1093G µPC1093T µPC1093TA Operating Ambient Temperature Storage Temperature Notes 1. with 16 cm2 × 0.7 mm ceramic substrate 2. with 75 mm2 × 0.7 mm ceramic substrate Caution Exposure to Absolute Maximum Ratings for extended periods may affect device reliability; exceeding the ratings could cause permanent damage. The parameters apply independently. The device should be operated within the limits specified under DC and AC Characteristics. RECOMMENDED OPERATING CONDITIONS Parameter Cathode Voltage Cathode Current Power Dissipation Symbol VKA IK MIN. VREF 1 TYP. 5 10 50 50 50 50 TA –20 MAX. 36 100 220 150 125/640Note 1 58/160Note 2 +85 °C Unit V mA mW µPC1093J µPC1093G µPC1093T µPC1093TA PT Operating Ambient Temperature Notes 1. with 16 cm2 × 0.7 mm ceramic substrate 2. with 75 mm2 × 0.7 mm ceramic substrate 3 µPC1093 ELECTRICAL CHARACTERISTICS (TA = 25 °C, IK = 10 mA, unless otherwise specified.) Parameter Reference Voltage Reference Voltage Deviation Over Temperature Reference Voltage Deviation Over Cathode Voltage Reference Input Current Reference Input Current Deviation Over Temperature Minimum Cathode Current Off-state Cathode Current Dynamic Impedance IREF Symbol VREF VKA = VREF 0 °C ≤ TA ≤ 70 °C, VKA = VREF | VREF | ≤ VKA ≤ 10 V 10 V ≤ VKA ≤ 36 V VKA = VREF, R1 = 10 kΩ, R2 = ∞ 0 °C ≤ TA ≤ 70 °C, VKA = VREF, R1 = 10 kΩ, R2 = ∞ VKA = VREF, ∆VREF = 2 % VKA = 36 V, VREF = 0 VKA = VREF, f ≤ 1 kHz 1 mA ≤ IK ≤ 100 mA Conditions MIN. 2.440 TYP. 2.495 7 MAX. 2.550 17 Unit V mV ∆VREF ∆VREF/∆V 1.2 0.7 1 0.4 2.7 2 4 1.2 mV/V mV/V µA µA mA ∆IREF IK min. IK off | ZKA | 0.4 0.1 0.1 1 1 0.5 µA Ω TEST AND APPLICATION CIRCUIT VIN R0 VOUT R1 REF K VOUT A (1+ R1 . ) VREF R2 R2 GND 4 µPC1093 TYPICAL CHARACTERISTICS Pd vs TA ( I ) 0.8 Pd vs TA ( II ) (with 16 cm2×0.7 mm ceramic substrate) µPC1093J 180 °C/W Pd - Power Dissipation - W 2.0 Pd - Power Dissipation - W µ PC1093T 62.5 °C/W 0.6 µPC1093G 260 °C/W 0.4 1.6 1.2 µPC1093T 315 °C/W 0.8 0.2 µ PC1093TA 0.4 µPC1093TA 695 °C/W 0 100 20 40 60 80 TA - Operating Ambient Temperature - °C 245 °C/W (with 75 mm2×0.7 mm ceramic substrate) 0 20 40 60 80 100 TA - Operating Ambient Temperature - °C VREF vs TA 20 VREF - Reference Voltage Deviation - mV IK vs VKA ( I ) 1.2 IK = 10 mA VKA = VREF TA = 25 °C VKA = VREF 1.0 IK - Cathode Current - mA 10 0.8 0 0.6 –10 0.4 –20 0.2 –30 –25 0 50 75 100 25 TA - Operating Ambient Temperature - °C 0 1 2 VKA - Cathode Voltage - V 3 VREF vs VKA 20 VREF - Reference Voltage Deviation - mV IK vs VKA ( II ) 150 TA = 25 °C VKA = VREF 100 IK - Cathode Current - mA TA = 25 °C IK = 10 mA 10 0 50 –10 0 –20 –50 –30 0 10 20 30 VKA - Cathode Voltage - V 40 –100 –2 –1 0 1 2 VKA - Cathode Voltage - V 3 5 µPC1093 IREF vs TA 3 0.3 VKA = VREF, IK = 10 mA R1 = 10 kΩ , R2 = ∞ IK off vs TA VKA = 36 V VREF = 0 2 IK off - Off-state Cathode Current - µ A IREF - Reference Input Current - µA 0.2 1 0.1 0 –25 0 25 50 75 100 0 –25 0 25 50 75 100 TA -Operating Ambient Temperature - °C TA -Operating Ambient Temperature - °C ZKA vs f VIN - Input Voltage - V 100 TA = 25 °C VKA = VREF 1 mA≤IK≤100 mA 10 TA = 25 °C VKA = VREF RO = 220 Ω Pulse Response ZKAI - Dynamic Impedance - Ω 5 0 VREF - Reference Voltage - V 1 3 2 1 0 0 2 4 6 T - Time - µ s 8 10 0.1 0.01 100 1k 100 k 10 k f - Frequency - Hz 1M Av vs f 60 Av - Voltage Gain - dB 40 20 220 Ω IK νo νin ~ 10 kΩ 10 kΩ 0 –20 1k (IK = 10 mA) 10 k 100 k 1M f - Frequency - Hz 10 M 6 µPC1093 STABILITY AREA 100 a : VKA = VREF 90 b : VKA = 5 V 80 c : VKA = 10 V d : VKA = 15 V 70 60 50 40 30 20 10 0 0.001 0.01 0.1 CKA - Load Capacitance - µF 1 10 Unstable TEST CIRCUIT a 150 Ω IKA CKA a b Stable d a c c b IKA - Cathode Current - mA Stable b, c, d 150 Ω IKA R CKA 10 kΩ CKA : Monolithic Ceramic Capacitors Caution of Stability Area If the Aluminum electrolytic capacitor is used, it should be kept CKA ≥ 2.2 µF. When using plural different types of capacitors, each capacitor is needed to be stable independently. When designing a circuit, take the characteristic variation among devices into consideration, so that the designed circuit has an enough characteristic margin supporting the standard specifications described above. 7 µPC1093 PACKAGE DRAWINGS 3 PIN PLASTIC SIP (TO-92) A N M 1 3 Y H F J G M V U NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM A F G H J M N U V Y MILLIMETERS 5.0±0.2 0.5 +0.3 −0.1 0.12 1.27 1.33 MAX. 5.0±0.5 4.0±0.2 2.8 MAX. 0.5±0.1 15.0±0.7 P3J-127B-2 8 µPC1093 8 PIN PLASTIC SOP (225 mil) 8 5 detail of lead end P 1 A 4 H F G I J S B E D NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. L K N S C M M ITEM A B C D E F G H I J K L M N P MILLIMETERS 5.2 +0.17 −0.20 0.78 MAX. 1.27 (T.P.) 0.42 +0.08 −0.07 0.1±0.1 1.59±0.21 1.49 6.5±0.3 4.4±0.15 1.1±0.2 0.17 +0.08 −0.07 0.6±0.2 0.12 0.10 3° +7° −3° S8GM-50-225B-5 9 µPC1093 POWER MINI MOLD (SOT-89) (Unit: mm) 4.5±0.1 1.6±0.2 1.5±0.1 0.8 MIN. 0.42±0.06 1.5 3.0 0.47 ±0.06 0.42±0.06 4.0±0.25 2.5±0.1 0.41+0.03 −0.05 10 µPC1093 5 PIN PLASTIC MINI MOLD detail of lead end F G R E A H B I J L S C D M M N K S ITEM A B C D E F G H I J K L M N R MILLIMETERS 2.9±0.2 0.3 0.95 (T.P.) 0.32 +0.05 −0.02 0.05±0.05 1.4 MAX. 1.1+0.2 −0.1 2.8±0.2 1.5+0.2 −0.1 0.65 +0.1 −0.15 0.16 +0.1 −0.06 0.4±0.2 0.19 0.1 5°±5° S5TA-95-15A 11 µPC1093 RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Through-hole device µPC1093J: 3-pin plastic SIP (TO-92) Process Wave soldering (only to leads) Solder temperature: 260 °C or below, Flow time: 10 seconds or less. Conditions Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. Surface mount devices µPC1093G: 8-pin plastic SOP (225 mil) Process Infrared ray reflow Conditions Peak temperature: 230 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time. VPS Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time. Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). VP15-00-1 Symbol IR30-00-1 Wave soldering WS60-00-1 Caution Apply only one kind of soldering condition to a device, or the device will be damaged by heat stress. 12 µPC1093 µPC1093T: Power mini mold (SOT-89) Process Infrared ray reflow Conditions Peak temperature: 235 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 2 times. Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 2 times. Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). Symbol IR35-00-2 VPS VP15-00-2 Wave soldering WS60-00-1 Caution Apply only one kind of soldering condition to a device, or the device wil