UMA6NT1 (ON Semiconductor) - (UMA4NT1 / UMA6NT1) Dual Common Emitter Bias Resistor Transistors (UMA6NT1.pdf)

ON Semiconductor

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UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two BRT devices are housed in the SOT−353 package which is ideal for low power surface mount applications where board space is at a premium. Features 3 2 1 R1 R1 Q1 4 Q2 5 • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb−Free Packages are Available MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 www.DataSheet4U.com and Q2, − minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SC−88A/SOT−353 CASE 419A STYLE 7 Ux M G G THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Surface Mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25°C (Note 1) RqJA TJ, Tstg PD 833 −65 to +150 *150 °C/W °C mW Ux = Device Code x = 0 or 1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device UMA4NT1 UMA4NT1G UMA6NT1 Package SOT−353 SOT−353 (Pb−Free) SOT−353 SOT−353 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. DEVICE RESISTOR VALUES Device UMA4NT1 UMA6NT1 R1 (K) 10 47 R2 (K) ∞ ∞ UMA6NT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 May, 2006 − Rev. 4 Publication Order Number: UMA4NT1/D UMA4NT1, UMA6NT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor UMA4NT1 UMA6NT1 UMA4NT1 UMA6NT1 V(BR)CBO V(BR)CEO hFE VCE(SAT) VOL VOH R1 50 50 160 160 − − 4.9 7.0 33 − − 250 250 − − − 10 47 − − − − 0.25 0.2 − 13 61 Vdc Vdc Vdc kW Vdc Vdc UMA4NT1 UMA6NT1 ICBO ICEO IEBO − − − − − − − − 100 500 0.9 0.2 nAdc nAdc mAdc Symbol Min Typ Max Unit PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 RqJA = 833°C/W 0 −50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 2 UMA4NT1, UMA6NT1 TYPICAL ELECTRICAL CHARACTERISTICS − UMA4NT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 25°C 1000 TA = 75°C 100 25°C −25°C 1 TA = 75°C −25°C hFE, DC CURRENT GAIN 0.1 10 VCE = 10 V 1 0.01 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (mA) 70 80 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 2. VCE(sat) versus IC 12 10 8 6 4 2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25°C 100 Figure 3. DC Current Gain Cob, CAPACITANCE (pF) 10 75°C TA = −25°C 25°C 0.1 VO = 5 V 0 1 2 3 4 VIN, INPUT VOLTAGE (VOLTS) 5 6 1 0 5 10 15 20 25 30 40 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 0.01 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage http://onsemi.com 3 UMA4NT1, UMA6NT1 TYPICAL ELECTRICAL CHARACTERISTICS − UMA6NT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 25°C 1 −25°C TA = 75°C 0.1 1000 hFE, DC CURRENT GAIN TA = 75°C 25°C 100 −25°C VCE = 10 V 0.01 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) 60 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 6. VCE(sat) versus IC 12 10 8 6 4 2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25°C 100 Figure 7. DC Current Gain 75°C 10 TA = −25°C 25°C Cob, CAPACITANCE (pF) 1 0.1 0.01 VO = 5 V 0 1 2 3 4 VIN, INPUT VOLTAGE (VOLTS) 5 0 5 10 15 20 25 30 40 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 0.001 Figure 8. Output Capacitance Figure 9. Output Current versus Input Voltage http://onsemi.com 4 UMA4NT1, UMA6NT1 PACKAGE DIMENSIONS SC−88A / SOT−353 / SC−70 CASE 419A−02 ISSUE J A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5 4 S 1 2 3 −B− D 5 PL 0.2 (0.008) M B M N J C DIM A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 UMA4NT1/D

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