Description
www.DataSheet4U.com UCC27200, UCC27201 www.ti.com SLUS746 – DECEMBER 2006 120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver FEATURES • • • • • • • • • • • Specified from -40 °C to 140 °C Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration Maximum Boot Voltage 120 V Maximum VDD Voltage 20 V On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode Greater than 1 MHz of Operation 20-ns Propagation Delay Times 3-A Sink, 3-A Source Output Currents 8-ns Rise/7-ns Fall Time with 1000-pF Load 1-ns Delay Matching Under Voltage Lockout for High-Side and Low-Side Driver CONTENTS Device Ratings Electrical Characteristics Device Information Application Information Additional References 2 4 11 14 22 DESCRIPTION The UCC27200/1 family of high frequency N-Channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-Channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1-ns between the turn-on and turn-off of each other. APPLICATIONS • • • • • • • Power Supplies for Telecom, Datacom, and Merchant Markets Half-Bridge Applications and Full-Bridge Converters Isolated Bus Architecture Two-Switch Forward Converters Active-Clamp Forward Converters High Voltage Synchronous-Buck Converters Class-D Audio Amplifiers Simplified Application Diagram +12V +100V V DD HB SECONDARY SIDE CIRCUIT HI PWM CONTROLLER LI CONTROL DRIVE HI HO HS DRIVE LO UCC27200/1 VSS LO ISOLATION AND FEEDBACK Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPad is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2006, Texas Instruments Incorporated UCC27200, UCC27201 www.ti.com SLUS746 – DECEMBER 2006 DESCRIPTION (CONT.) An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold. Two versions of the UCC27200 are offered. The UCC27200 has high noise immune CMOS input thresholds while the UCC27201 has TTL compatible thresholds. Both devices are offered in 8-pin SOIC (D), PowerPad™ SOIC-8 (DDA) and SON-8 (DRM) packages. ORDERING INFORMATION PACKAGED DEVICES (1) TEMPERATURE RANGE TA = TJ -40°C to +140°C (1) (2) (3) INPUT COMPATIBILITY CMOS TTL SOIC-8 (D) (2) UCC27200D UCC27201D PowerPad™ SOIC-8 (DDA) (2) UCC27200DDA UCC27201DDA SON-8 (DRM) (3) UCC27200DRMT UCC27201DRMT These products are packaged in Lead (Pb)-Free and green lead finish of PdNiAu which is compatible with MSL level 1 at 255-260°C peak reflow temperature to be compatible with either lead free or Sn/Pb soldering operations. D (SOIC-8) and DDA (Power Pad™ SOIC-8) packages are available taped and reeled. Add R suffix to device type (e.g. UCC27200DR) to order quantities of 2,500 devices per reel. DRM (SON-8) package comes either in a small reel of 250 pieces as part number UCC27200DRMT, or larger reels of 3000 pieces as part number UCC27200 DRMR. DEVICE RATINGS ABSOLUTE MAXIMUM RATINGS Over operating free-air temperature, unless noted, all voltages are with respect to VSS (1) PARAMETER Supply voltage range, (2) VALUE -0.3 to 20 -0.3 to 20 UNIT VDD DC Repetitive pulse <100 ns DC Repetitive pulse <100 ns DC Repetitive pulse <100 ns Input voltages on LI and HI, VLI, VHI Output voltage on LO, VLO Output voltage on HO, VHO Voltage on HS, VHS Voltage on HB, VHB Voltage On HB-HS Operating virtual junction temperature range, TJ Storage temperature, TSTG Lead temperature (soldering, 10 sec.) Power dissipation at TA = 25°C (D package) (3) -0.3 to VDD + 0.3, -2 to VDD + 0.3 VHS – 0.3 to VHB + 0.3 VHS - 2 to VHB + 0.3, (VHB - VHS <20) -1 to 120 -5 to 120 -0.3 to 120 -0.3 to 20 -40 to +150 -65 to +150 +300 1.3 2.7 3.3 W (3) V °C Power dissipation at TA = 25°C (DDA package) (3) Power dissipation at TA = 25°C (DRM package) (1) (2) (3) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to Vss. Currents are positive into, negative out of the specified terminal. This data was taken using the JEDEC proposed high-K test PCB. See THERMAL CHARACTERISTICS section for details. 2 Submit Documentation Feedback UCC27200, UCC27201 www.ti.com SLUS746 – DECEMBER 2006 RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) PARAMETER VDD VHS VHB Supply voltage range Voltage on HS Voltage on HS, (repetitive pulse <100 ns) Voltage on HB Voltage slew rate on HS TJ Operating junction temperature range -40 MIN 8 -1 -5 VHS + 8, VDD –1 NOM 12 MAX 17 105 110 VHS + 17, 115 50 +140 V / ns °C V UNIT ELECTROSTATIC DISCHARGE (ESD) PROTECTION METHOD Human body model CDM MIN 2000 1000 UNIT V THERMAL CHARACTERISTICS over operating free-air temperature range, maximum power dissipation at ambient temperature: PDISS = (150-TA) / θJA, (unless otherwise noted) PACKAGE D DDA (1) DRM (2) (1) θJA (°C/W)(Junction to Ambient) 95 46 38 θJC (°C/W)( Junction to Case) 71 71 56 θJP (°C/W) ( Junction to PowerPad™) NA 4.8 4.1 (2) Test board conditions: • 3in x 3in, four4 layers, thickness: 0.062 in. • 2-oz copper traces located on the top and bottom of the PCB. • 2-oz copper ground planes on the internal 2 layers. • Six thermal vias in the PowerPad™ area under the device package. Test board conditions: • 3in x 3in, 4 layers, thickness: 0.062 in. • 2-oz copper traces located on the top and bottom of the PCB. • 2-oz copper ground planes on the internal 2 layers. • Four thermal vias in the PowerPad™ area under the device package. Submit Documentation Feedback 3 UCC27200, UCC27201 www.ti.com SLUS746 – DECEMBER 2006 ELECTRICAL CHARACTERISTICS over operating free-air temperature range, VDD = VHB = 12 V, VHS = VSS = 0 V, No load on LO or HO, TA = TJ = -40°C to +140°C, (unless otherwise noted) PARAMETER Supply Currents IDD IDDO IHB IHBO IHBS IHBSO Input VHIT VLIT VIHYS VHIT VLIT VIHYS RIN Input rising threshold Input falling threshold Input voltage hysteresis Input voltage threshold Input voltage threshold Input voltage Hysteresis Input pulldown resistance VDD rising threshold VDD threshold hysteresis VHB rising threshold VHB threshold hysteresis Bootstrap Diode VF VFI RD Low-current forward voltage High-current forward voltage Dynamic resistance, ∆VF/∆I I VDD - HB = 100 µA I VDD - HB = 100 mA I VDD - HB = 100 mA and 80 mA ILO = 100 mA TJ = -40 to 125°C VLOH High level output voltage TJ = -40 to 140°C Peak pull-up current Peak pull-down current HO Gate Driver VHOL Low level output voltage TJ = -40 to 125°C VHOH High level output voltage TJ = -40 to 140°C Peak pull-up current Peak pull-down current IHO = 100 mA IHO = -100 mA, VHOH = VHBVHO IHO = -100 mA, VHOH = VHBVHO VHO = 0 V VHO = 12 V 0.18 0.25 0.25 3 3 0.4 0.4 0.42 A V ILO = -100 mA, VLOH = VDD VLO ILO = -100 mA, VLOH = VDD VLO VLO = 0 V VLO = 12 V 0.65 0.85 0.6 0.85 1.1 1.0 V Ω 5.8 100 6.2 UCC27201 0.8 UCC27200 3 5.8 5.4 0.4 1.7 1.6 100 200 7.1 0.5 6.7 0.4 7.2 350 7.8 V mV kΩ 2.5 V 8 VDD quiescent current VDD operating current Boot voltage quiescent current Boot voltage operating current HB to VSS quiescent current HB to VSS operating current UCC27200 UCC27201 VLI = VHI = 0 f = 500 kHz, CLOAD = 0 f = 500 kHz, CLOAD = 0 VLI = VHI = 0 V f = 500 kHz, CLOAD = 0 VHS = VHB = 110 V f = 500 kHz, CLOAD = 0 0.4 2.5 3.8 0.4 2.5 0.0005 0.1 0.8 4 5.5 0.8 4 1 uA mA mA TEST CONDITIONS MIN TYP MAX UNIT Undervoltage Protection (UVLO) LO Gate Driver VLOL Low level output voltage 0.18 0.25 0.25 3 3 0.4 0.4 0.42 A V 4 Submit Documentation Feedback UCC27200, UCC27201 www.ti.com SLUS746 – DECEMBER 2006 ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range, VDD = VHB = 12 V, VHS = VSS = 0 V, No load on LO or HO, TA = TJ = -40°C to +140°C, (unless otherwise noted) PARAMETER Propagation Delays TDLFF TDHFF TDLRR TDHRR VLI falling to VLO falling VHI falling to VHO falling VLI rising to VLO rising VHI rising to VHO rising TJ = -40 to 125°C TJ = -40 to 140°C TJ = -40 to 125°C TJ = -40 to 140°C TJ = -40 to 125°C TJ = -40 to 140°C TJ = -40 to 125°C TJ = -40 to 140°C CLOAD = 0 CLOAD = 0 CLOAD = 0 CLOAD = 0 CLOAD = 0 CLOAD = 0 CLOAD = 0 CLOAD = 0 20 20 20 20 20 20 20 20 1 1 CLOAD = 1000 pF CLOAD = 1000 pF CLOAD = 0.1 µF CLOAD = 0.1 µF 8 7 0.35 0.3 0.6 0.6 50 IF = 20 mA, IREV = 0.5 A (1) (2) 20 45 50 45 50 45 50 45 50 7 7 ns TEST CONDITIONS MIN TYP MAX UNIT Delay Matching TMON TMOFF tR tF tR tF LI ON, HI OFF LI OFF, HI ON LO, HO LO, HO LO, HO (3 V to 9 V) LO, HO (3 V to 9 V) Minimum input pulse width that changes the output Bootstrap diode turn-off time (1) (2) ns Output Rise and Fall Time ns us Miscellaneous ns Typical values for TA = 25°C IF: Forward current applied to bootstrap diode, IREV: Reverse current applied to bootstrap diode. Submit Documentation Feedback 5 UCC27200, UCC27201 www.ti.com SLUS746 – DECEMBER 2006 TYPICAL CHARACTERISTICS UCC27200 IDD OPERATING CURRENT vs FREQUENCY 10.0 VDD = 12 V No Load on Outputs ID

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