Controlled Avalanche Diode



Part  Number U17
Manufacturer Hitachi
Semiconductor DataSheet

DataSheet View

www.DataSheet4U.com CONTROLLED AVALANCHE DIODE U17 FEATURES • Transient surge voltage protection. • Diffused-junction. Glass passivated and encapsulated. OUTLINE DRAWING φ 5 MAX (0.2) Unit in mm(inch) Direction of polarity Cathode band 28MIN. (1.10) 62MIN. (2.44) Type U17B(100V) U17C(200V) U17D(300V) U17E(400V) Color of cathode band φ 1.2 (0.05) 7MAX (0.28) Weight: 1.0 (g) ABSOLUTE MAXIMUM RATINGS Items Repetitive Peak Reverse Voltage Peak Reverse Power Average Forward Current Surge(Non-Repetitive) Forward Current I t Limit Value Operating Junction Temperature Storage Temperature 2 Type VRRM PRM IF(AV) IFSM It Tj Tstg 2 U17B V kW A A As °C °C 2 U17C 200 U17D 300 28MIN. (1.10) Yellow Black Purple Blue Symbol(Black) U17E 400 100 3( Tj = 25°C,Impulse duration 10µs Non-repetitive ) Single-phase half sine wave 180° conduction 2.5 T =90°C, Lead length = 10mm L ( ) 100( Without PIV, 10ms conduction, Tj = 175°C start ) 40( Time = 2 ~ 10ms, I = RMS value ) -40 ~ +175 -40 ~ +175 Notes (1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max.. (2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 3kg, Twist 90°×1 cycle. CHARACTERISTICS(TL=25°C) Items Peak Reverse Current Symbols IRRM Units µA Min. - Typ. 4 1.5 0.6 Max. 50 20 10 1.1 B class Test Conditions C,D class E class IFM=2.5Ap, Single-phase half sine wave 1 cycle IF=2mA, VR=-15V IRM=1.0mA, Single-phase half sine wave 1 pps, Time ≤ 5s Rated VRRM Peak Forward Voltage Reverse Recovery Time Avalanche Voltage Avalanche Voltage Temperature Coefficient Steady State Thermal Impedance VFM trr VAVL α Rth(j-a) Rth(j-l) V µs V %/°C °C/W - 3.0 Table.1 - 0.080 - 60 30 ∆VAVL 1 × ×100 VAVL 175-25 Lead length = 10 mm PDE-U17-0 www.DataSheet4U.com U17 VRRM Class VAVL Symbols TYP. VAVL MIN A ±15% MAX MIN B ±7.5% MAX TABLE.1 U17 B 27 270 230 310 250 290 30 300 255 345 280 320 33 330 280 380 305 355 36 360 305 415 330 390 33 330 280 380 305 355 36 360 305 415 330 390 C 39 390 330 450 360 420 44 440 375 505 405 475 44 440 375 505 405 475 50 500 425 575 460 535 D 55 550 465 635 505 590 63 630 535 725 580 680 55 550 465 635 505 590 E 63 630 535 725 580 680 70 700 595 805 645 750 V Units V VAVL Band As required, the avalanche voltage can be selected as follows : 200V “example” U17C36A VRRM 2.5A IF(AV) 305~415V VAVL Forward characteristics 100 Single-phase half sine wave Conduction : 10ms 1 Cycle Max. average forward power dissipation (Resistive or inductive load) MAX. AVERAGE FORWARD POWER DISSIPATION (W) 4.5 DC 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Single-phase ( 50Hz ) PEAK FORWARD CURRENT (A) 10 TL=175˚C TL=25˚C 1 0.1 1 2 3 PEAK FORWARD VOLTAGE DROP (V) AVERAGE FORWARD CURRENT (A) Max. allowable ambient temperature (Resistive or inductive load) MAX. ALLOWABLE AMBIENT TEMPERATURE (˚C) 180 160 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 Lead length L=10mm 20mm 25mm Single-phase half sine wave 180˚ conduction (50Hz) L Max. allowable lead temperature (Resistive or inductive load) 180 MAX. ALLOWABLE LEAD TEMPERATURE (˚C) Single-phase half sine wave 180˚ conduction (50Hz) 160 140 120 100 80 60 40 Lead temp L L Lead length L=10mm 20mm 25mm L PC board (100x180x1.6t) Copper foil ( 5.5) 20 0 0 0.5 PC board (100x180x1.6t) Copper foil ( 5.5) 2.5 3.0 1.0 1.5 2.0 2.5 3.0 AVERAGE FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) PDE-U17-0 www.DataSheet4U.com U17 120 Surge forward current characteristic (Non-repetitive) Surge current peak value Typ. Reverse current vs. junction temperature 500 Note : at VRRM 100 SURGE FORWARD CURRENT (A) 100 10ms 1 cycle REVERSE CURRENT (µA) 80 Without PIV Class : B 10 Class : C,D 60 With PIV 40 1 Class : E 20 0 1 10 CYCLES 100 0.1 0 50 100 150 200 JUNCTION TEMPERATURE (˚C) Steady-state thermal impedance 120 Ambient temp. measured point Lead temp. Lead measured poin length (φ0.5 thermocouple) 2 Copper foil ( 5.5) 15 Lead length Transient thermal impedance 100 Rth(j - a) Lead length = 10 mm STEADY STATE THERMAL IMPEDANCE (˚C/W) 100 TRANSIENT THERMAL IMPEDANCE (˚C/W) 20 Rth(j - l) 10 80 PC board (100×180×1.6t) Rth(j - a) 60 Rth(j - l) 40 1 20 Note : PC. board mounted PC. board( 100 × 180 × 1.6t) Copper foil ( 5.5 ) 0.1 0.001 0.01 0.1 TIME (s) 1 10 100 0 0 5 10 15 20 25 30 LEAD LENGTH (mm) Typical reverse power characteristic (Non-repetitive) 2000 Reverse recovery time ( trr ) test circuit 50µF - 15V 22µs D.U.T 2mA 15V 600Ω 0 Irp trr t 0.1Irp 1000 PEAK REVERSE POWER (W) Tj=25˚C 100 10 0.01 0.1 1 10 RECTANGULAR PULSE DURATION (ms) PDE-U17-0 www.DataSheet4U.com HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located “Inquiry” portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse




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