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TY30N50E Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Data Sheet
TMOS E-FET .
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls,
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive
www.DataSheet4loUa.cdosmare switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
®
D
Order this document
by MTY30N50E/D
MTY30N50E
Motorola Preferred Device
TMOS POWER FET
30 AMPERES
500 VOLTS
RDS(on) = 0.15 OHM
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1 M)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp 10 ms)
Drain Current — Continuous @ TC = 25°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 30 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
CASE 340G–02, STYLE 1
TO–264
S
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
EAS
Value
500
500
± 20
± 40
30
80
300
2.38
– 55 to 150
3000
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
RθJC
RθJA
TL
0.42 °C/W
40
260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoottoororolal,aInTc.M19O9S5 Power MOSFET Transistor Device Data
1
Page 1

MTY30N50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
Temperature Coefficient (Positive)
V(BR)DSS
500
566
— Vdc
— mV/°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
µAdc
— — 10
— — 200
— — 100 nAdc
VGS(th)
2 — 4 Vdc
— 7 — mV/°C
www.DataSheet4US.ctoamtic Drain–Source On–Resistance (VGS = 10 Vdc, ID = 15 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 30 Adc)
(ID = 15 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 250 Vdc, ID = 30 Adc,
VGS = 10 Vdc,
RG = 4.7 )
(VDS = 400 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
— — 0.15 Ohm
— 4.1
——
Vdc
5
7
17 — — mhos
7200 10080
pF
— 775 1200
— 120 250
— 32 60 ns
— 105 175
— 160 275
— 115 200
— 235 350 nC
— 35 —
— 110 —
— 65 —
Vdc
— 0.95 1.2
— 0.88 —
Reverse Recovery Time
(See Figure 14)
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
trr
ta
tb
QRR
LD
— 485 —
ns
— 312 —
— 173 —
— 8.2 — µC
— 4.5 — nH
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
LS
— 13 — nH
2 Motorola TMOS Power MOSFET Transistor Device Data
Page 2

60
TJ = 25°C
50
40
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V
6V
8V
60
VDS 10 V
50
40
MTY30N50E
30
20
10
0
0
www.DataSheet4U.com
5V
4V
2 4 6 8 10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
12
30
20 100°C
TJ = – 55°C
10
25°C
0
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.35
0.3 VGS = 10 V
0.25
TJ = 100°C
0.2
0.15 25°C
0.1
– 55°C
0.05
0
0 10 20 30 40 50 60
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.17
TJ = 25°C
0.16
0.15
VGS = 10 V
0.14 15 V
0.13
0.12
0
10 20 30 40 50
ID, DRAIN CURRENT (AMPS)
60
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
2 ID = 15 A
1.5
1
0.5
0
– 50 – 25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125
Figure 5. On–Resistance Variation with
Temperature
150
10000
1000
TJ = 125°C
100°C
100 VGS = 0 V
10
25°C
1
0 100 200 300 400 500
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
Page 3
Part Number TY30N50E
Manufactur Motorola
Description Search -----> MTY30N50E
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