Description
TMS28F1600T, TMS28F1600B 16M-BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 – JANUARY 1997 D D D D D D D www.DataSheet4U.com D D Auto-Select VCC and VPP Voltages – 2.7 V, 3.3 V, or 5 V Read Operation (VCC) – 2.7 V, 3.3 V, 5 V, or 12 V Program Erase (VPP) Fast Read Access Time – 5 V: 80/90 ns MAX – 2.7 V, 3.3 V: 90/100 ns MAX Low Power Consumption (VCC = 5.5V) – Active Write 220 mW (Byte Mode)† – Active Read 248 mW (Byte Mode)† – Active Write 220 mW (Word Mode)† – Active Read 248 mW (Word Mode)† – Block-Erase 220 mW† – Standby 0.55 mW – Deep Power-Down Mode 0.044 mW Automatic Power-Saving Mode Sector Architecture – One 16K-Byte Protected Boot Block – Two 8K-Byte Parameter Blocks – One 96K-Byte Main Block – Fifteen 128K-Byte Main Blocks – Top or Bottom Boot Locations User-Selectable x8 or x16 Operation Fully Automated On-Chip Erase and Byte/Word Program Operations All Inputs/Outputs TTL-Compatible Supports Concurrent Operations – Read During Program – Read During Erase – Program During Erase – Two-Byte / -Word Programming – Two Sector Combinations Erasure D D D D D D D Enhanced Suspend Options – Sector-Erase-Suspend to Read – Sector-Erase-Suspend to Program – Program-Suspend to Read Command Set Compatible With Previous Generation of Flash Transition Between Single-Operation and Concurrent-Operations Mode by way of Software Command 100 000 Program / Erase Cycles Per Sector Hardware Write-Protection for Boot Block Two Temperature Ranges – Commercial 0°C to 70° C – Extended – 40°C to 85° C Industry Standard Packaging (JEDEC) – 48-Pin TSOP (DCD Suffix) A0 – A19 BYTE DQ0 – DQ14 DQ15/A–1 CE OE NC RP VCC VPP VSS WE WP Address Inputs Byte Enable Data In / Data out Data In/Out (word-wide mode) Low Order Address (byte-wide mode) Chip Enable Output Enable No Internal Connection Reset / Deep Power Down Power Supply Power Supply for Program / Erase Ground Write Enable Write Protect description The TMS28F1600T / B is a 16777216-bit, boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F1600T/B is organized in a sectored architecture consisting of one 16K-byte protected boot sector, two 8K-byte parameter sectors, one 96K-byte main sector, and fifteen 128K-byte main sectors. Operation as a 2M-byte (8-bit) or a 1M-word (16-bit) organization is user-selectable. Embedded program and block-erase functions are fully automated by two on-chip write state machines (WSMs), simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM statuses can be monitored by two on-chip status registers, one for each WSM, to determine progress of program/erase tasks. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. † In single-operation mode PRODUCT PREVIEW information concerns products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice. Copyright © 1997, Texas Instruments Incorporated POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 1 PRODUCT PREVIEW PIN NOMENCLATURE TMS28F1600T, TMS28F1600B 16M-BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 – JANUARY 1997 TMS28F1600T/B 48-PIN TSOP (DCD) (TOP VIEW) PRODUCT PREVIEW A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE RP VPP WP NC A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE VSS DQ15 / A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE VSS CE A0 2 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 TMS28F1600T, TMS28F1600B 16M-BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 – JANUARY 1997 description (continued) The ’28F1600 has the auto-select feature that allows the user alternative read and program/erase voltages for maximum flexibility. Memory reads can be performed using VCC = 2.7 or 3.3 V for optimum power consumption or at VCC = 5 V for device performance. Erasing or programming the device can be accomplished with VPP = 2.7 V, 3.3 V, or 5 V which eliminates having to use a 12-V source and/or in-system voltage converters. Alternatively, 12-V VPP operation exists for systems that already have a 12-V power supply. device symbol nomenclature TMS28F1600 T 80 C DCD L Temperature Range Designator L = 0°C to 70°C E = – 40°C to 85°C Package Designator DCD = Plastic Dual Small-Outline Package (48-Pin) Speed Designator 80 = 80 ns 90 = 90 ns Boot-Block Location Indicator T = Top Location B = Bottom Location Table 1. VCC / VPP Voltage Configurations† DEVICE CONFIGURATION TMS28F1600T TMS28F1600B † 3-V range indicates 2.7 V to 3.6 V maximum. READ VOLTAGE (VCC) 2.7 V to 3.6 V, 5 V ± 10 % 2.7 V to 3.6 V, 5 V ± 10 % PROGRAM/ERASE VOLTAGE (VPP) " 5% 3 V/5 V ± 10% or 12 V " 5% 3 V/5 V ± 10% or 12 V architecture The TMS28F1600T / B uses a sectored architecture to allow independent erasure of selected memory blocks. The sector to be erased is selected by using any valid address within that sector. The TMS28F1600T/B has two (2) memory banks. Bank A consists of: D D D D D One 16K-byte protected boot sector Two 8K-byte parameter sectors One 96K-byte main sector and Seven 128K-byte main sectors and bank B consists of: Eight 128K-byte main sectors POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 3 PRODUCT PREVIEW Program/Erase Endurance C = 100 000 Cycles B = 10 000 Cycles TMS28F1600T, TMS28F1600B 16M-BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 – JANUARY 1997 architecture (continued) Embedded program and block-erase functions for each memory bank are fully automated by a separate and independent WSM. With two WSMs, each controlling one memory bank (8M bits of memory space), the overall system performance is greatly improved by allowing the device to be programmed/erased in one bank while simultaneously reading data from another sector of the other memory bank. The device also can be erased / programmed in one sector of one memory bank while simultaneously erased / programmed in another sector of the other memory bank. Within each bank, the suspend command can be used to suspend the erase operation to read from or program data to another sector not being erased. The suspend command can be used also to suspend the program operation so that data from any address location other than the one being programmed can be read. The TMS28F1600 is available with the sector architecture mapped with the boot block located at the top (TMS28F1600T) or at the bottom (TMS28F1600B) of the memory array, as required by different microprocessors. The bottom boot block is mapped with the 16K-byte boot block located at the low-order address range (00000h to 01FFFh, word mode). The top boot block is mapped with the 16K-byte boot block located at the high-order address range (FFFFFh to FE000h, word mode). Figure 1 and Figure 2 show the memory maps for the top and bottom boot block configuration, respectively. PRODUCT PREVIEW boot-sector data protection The 16K-byte boot block can be used to store key system data that is seldom changed in normal operation. Data in this block can be protected by using different combinations of the reset/power-down pin (RP), the write protect pin (WP) and VPP supply levels. See Table 2 for a listing of these combinations. Table 2. Data Protection Combinations DATA PROTECTION PROVIDED All sectors locked All sectors locked (reset) All sectors unlocked Only boot block locked  VPPLK  VPPLK  VPPLK  VPPLK X VPP RP X VIL VHH VIH VIH WP X X X VIH VIL 4 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 functional block diagram VPP WRITE STATE MACHINE A ADDRESS COUNTER A X DECODER Y DECODER Y Gating/Senting 16KByte Boot Block 8KByte Para 128KByte Main 128KByte Main 128KByte Main 128KByte Main 128KByte Main 8KByte Para 96KByte Main 128KByte Main 128KByte Main Program/ Erase Voltge Switch DATA COMPARATOR I/O LOGIC BYTE DQ8 – DQ15/A – 1 DQ0 – DQ7 CE WE OE RP OUTPUT BUFFER OUTPUT BUFFER INPUT BUFFER INPUT BUFFER COMMAND STATE MACHINE A A0 – A19 INPUT BUFFER ID REGISTER OUTPUT MULTIPLEXER STATUS REGISTER A STATUS REGISTER B ADDRESS LATCH ADDRESS DECODER Data Register A TMS28F1600T, TMS28F1600B 16M-BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 DATA COMPARATOR Y DECODER Y Gating/Sensing X DECODER 128KByte Main 128KByte Main 128KByte Main 128KByte Main 128KByte Main 128KByte Main 128KByte Main 128KByte Main Program/ Erase Voltage Switch Data Register B COMMAND STATE MACHINE B ADDRESS COUNTER B WRITE STATE MACHINE B VPP SMJS836 – JANUARY 1997 5 PRODUCT PREVIEW TMS28F1600T, TMS28F1600B 16M-BIT (1M BY 16, 2M BY 8) CONCURRENT OPERATIONS AUTO-SELECT BOOT-BLOCK FLASH MEMORY SMJS836 – JANUARY 1997 parameter sector Two parameter sectors of 8K bytes each can be used like a scratch pad to store frequently updated data. Alternatively, the parameter sectors can be used for additional boot or main-sector data. If a parameter sector is used to store additional boot-block data, caution should be exercised because the parameter sector does not have the boot-block data protection safety feature. main sector Primary memory on the TMS28F1600T/B is located in sixteen main sectors. Fifteen of the sectors have storage capacity for 128K-bytes and the remaining sector has storage capacity of 96K bytes. PRODUCT PREVIEW 6 POST OFFICE BOX 1443 • HOUSTO

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