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Part Number |
TLPYE62T |
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Manufacturer |
Toshiba Semiconductor |
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Semiconductor DataSheet |
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DataSheet View |
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TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TOSHIBA InGaAℓP LED
TLRE62T,TLRME62T,TLSE62T,TLOE62T,TLYE62T, TLPYE62T,TLGE62T,TLFGE62T,TLPGE62T
Panel Circuit Indicators
Unit: mm
· · · · · · · ·
φ3 mm package InGaAℓP technolgy All plastic mold type Transparent lens Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) High intensity light emission Excellent low current light output Applications: message boards, security devices and dashboard displays
Line-up
Product Name TLRE62T TLRME62T TLSE62T TLOE62T TLYE62T TLPYE62T TLGE62T TLFGE62T TLPGE62T Color Red Red Red Orange Yellow Pure Yellow Green Green Pure Green
InGaAlP
Material
JEDEC JEITA TOSHIBA Weight: 0.14 g
― ― 4-3H1
1
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
Maximum Ratings (Ta = 25°C)
Product Name TLRE62T TLRME62T TLSE62T TLOE62T TLYE62T TLPYE62T TLGE62T TLFGE62T TLPGE62T Forward Current IF (mA) 50 50 50 50 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 120 120 120 120 -40~100 -40~120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C)
Electrical and Optical Characteristics (Ta = 25°C)
Product Name TLRE62T TLRME62T TLSE62T TLOE62T TLYE62T TLPYE62T TLGE62T TLFGE62T TLPGE62T Unit Typ. Emission Wavelength ld 630 626 613 605 587 580 571 565 558 lP (644) (636) (623) (612) (590) (583) (574) (568) (562) nm Dl 20 23 20 20 17 14 17 15 14 IF 20 20 20 20 20 20 20 20 20 mA Luminous Intensity IV Min 47.6 47.6 85 153 85 47.6 47.6 27.2 15.3 mcd Typ. 120 180 200 350 250 150 110 70 45 IF 20 20 20 20 20 20 20 20 20 mA Forward Voltage VF Typ. 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.1 V Max 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 IF 20 20 20 20 20 20 20 20 20 mA Reverse Current IR Max 50 50 50 50 50 50 50 50 50 mA VR 4 4 4 4 4 4 4 4 4 V
Precautions
· · · Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TLRE62T
IF – VF
100 Ta = 25°C 50 30 1000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25°C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.4
0.3
0.2
0.1
20
40
0 580
600
620
640
660
680
700
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 90° 1.0 20 0 0
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90°
10°
0°
10°
20° 30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
3
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TLRME62T
IF – VF
100 Ta = 25°C 50 30 1000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
10 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
5
Ta = 25°C
Relative luminous intensity
-20 0 20 40 60 80
0.8
3
0.6
1 0.5 0.3
0.4
0.2
0.1
0 580
600
620
640
660
680
700
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 90° 1.0 20 0 0
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90°
10°
0°
10°
20° 30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
4
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TLSE62T
IF – VF
100 Ta = 25°C 50 30 1000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25°C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
20
40
0 560
580
600
620
640
660
680
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 90° 1.0 20 0 0
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90°
10°
0°
10°
20° 30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
5
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TLOE62T
IF – VF
100 Ta = 25°C 50 30 1000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25°C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
20
40
0 540
560
580
600
620
640
660
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 90° 1.0 20 0 0
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90°
10°
0°
10°
20° 30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
6
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TLYE62T
IF – VF
100 Ta = 25°C 50 30 1000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
3 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
Ta = 25°C
Relative luminous intensity
-20 0 60 80
0.8
1
0.6
0.5 0.3
0.4
0.2
0.1
20
40
0 540
560
580
600
620
640
660
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 90° 1.0 20 0 0
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90°
10°
0°
10°
20° 30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
7
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TLPYE62T
IF – VF
100 Ta = 25°C 50 30 1000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
10 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
Relative luminous intensity
5 3
Ta = 25°C 0.8
0.6
1
0.5 0.3
0.4
0.2
0.1
-20
0
20
40
60
80
0 540
560
580
600
620
640
660
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 90° 1.0 20 0 0
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90°
10°
0°
10°
20° 30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
8
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TLGE62T
IF – VF
100 Ta = 25°C 50 30 1000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
10 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
5
Ta = 25°C
Relative luminous intensity
-20 0 60 80
0.8
3
0.6
1 0.5 0.3
0.4
0.2
0.1
20
40
0 520
540
560
580
600
620
640
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 90° 1.0 20 0 0
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90°
10°
0°
10°
20° 30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
9
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TLFGE62T
IF – VF
100 Ta = 25°C 50 30 1000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V)
Forward current
IF (mA)
IV – Tc
10 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
Relative luminous intensity
5 3
Ta = 25°C 0.8
0.6
1
0.4
0.5 0.3
0.2
0.1
-20
0
20
40
60
80
0 520
540
560
580
600
620
640
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 90° 1.0 20 0 0
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90°
10°
0°
10°
20° 30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient temperature Ta (°C)
10
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T
TLPGE62T
IF – VF
100 Ta = 25°C 50 30 1000 Ta = 25°C
IV – IF
IF (mA)
(mcd) Luminous intensity IV
1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1
Forward current
10
5 3
1 1.6
10
100
Forward voltage
VF (V
Forward current
IF (mA)
IV – Tc
10 1.0
Relative luminous intensity – Wavelength
IF = 20 mA
Relative luminous intensity IV
5
Ta = 25°C
Relative luminous intensity
-20 0 20 40 60 80
0.8
3
0.6
1 0.5 0.3
0.4
0.2
0.1
0 520
540
560
580
600
620
640
Case temperature Tc
(°C)
Wavelength l
(nm)
Radiation pattern
80
IF – Ta (mA) Allowable forward current IF
60 40 60° 70° 80° 90° 1.0 20 0 0
Ta = 25°C
20° 30° 40° 50° 60° 70° 80° 90°
10°
0°
10°
20° 30° 40° 50°
0
0.2
0.4
0.6
0.8
20
40
60
80
100
120
Ambient tem |