InGaALP LED

Part  Number TLPYE62T
Manufacturer Toshiba Semiconductor
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TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TOSHIBA InGaAℓP LED TLRE62T,TLRME62T,TLSE62T,TLOE62T,TLYE62T, TLPYE62T,TLGE62T,TLFGE62T,TLPGE62T Panel Circuit Indicators Unit: mm · · · · · · · · φ3 mm package InGaAℓP technolgy All plastic mold type Transparent lens Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) High intensity light emission Excellent low current light output Applications: message boards, security devices and dashboard displays Line-up Product Name TLRE62T TLRME62T TLSE62T TLOE62T TLYE62T TLPYE62T TLGE62T TLFGE62T TLPGE62T Color Red Red Red Orange Yellow Pure Yellow Green Green Pure Green InGaAlP Material JEDEC JEITA TOSHIBA Weight: 0.14 g ― ― 4-3H1 1 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T Maximum Ratings (Ta = 25°C) Product Name TLRE62T TLRME62T TLSE62T TLOE62T TLYE62T TLPYE62T TLGE62T TLFGE62T TLPGE62T Forward Current IF (mA) 50 50 50 50 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 120 120 120 120 -40~100 -40~120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) Electrical and Optical Characteristics (Ta = 25°C) Product Name TLRE62T TLRME62T TLSE62T TLOE62T TLYE62T TLPYE62T TLGE62T TLFGE62T TLPGE62T Unit Typ. Emission Wavelength ld 630 626 613 605 587 580 571 565 558 lP (644) (636) (623) (612) (590) (583) (574) (568) (562) nm Dl 20 23 20 20 17 14 17 15 14 IF 20 20 20 20 20 20 20 20 20 mA Luminous Intensity IV Min 47.6 47.6 85 153 85 47.6 47.6 27.2 15.3 mcd Typ. 120 180 200 350 250 150 110 70 45 IF 20 20 20 20 20 20 20 20 20 mA Forward Voltage VF Typ. 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.1 V Max 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 IF 20 20 20 20 20 20 20 20 20 mA Reverse Current IR Max 50 50 50 50 50 50 50 50 50 mA VR 4 4 4 4 4 4 4 4 4 V Precautions · · · Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TLRE62T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.4 0.3 0.2 0.1 20 40 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 3 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TLRME62T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity -20 0 20 40 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 4 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TLSE62T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 560 580 600 620 640 660 680 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TLOE62T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TLYE62T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 7 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TLPYE62T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 -20 0 20 40 60 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 8 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TLGE62T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 20 40 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 9 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TLFGE62T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.4 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 10 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)62T TLPGE62T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity -20 0 20 40 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient tem




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