InGaALP LED

Part  Number TLPYE53T
Manufacturer Toshiba Semiconductor
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TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TOSHIBA InGaAℓP LED TLRE53T,TLRME53T,TLSE53T,TLOE53T,TLYE53T, TLPYE53T,TLGE53T,TLFGE53T,TLPGE53T Panel Circuit Indicators Unit: mm · · · · · · · · φ3 mm package InGaAℓP technology All plastic mold Transparent lens Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) High intensity light emission Excellent low current light output Applications: message boards, security devices and dashboard displays Line-up Product Name TLRE53T TLRME53T TLSE53T TLOE53T TLYE53T TLPYE53T TLGE53T TLFGE53T TLPGE53T Color Red Red Red Orange Yellow Pure Yellow Green Green Pure Green InGaAlP Material JEDEC JEITA TOSHIBA Weight: 0.14 g ― ― 4-4E1A 1 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T Maximum Ratings (Ta = 25°C) Product Name TLRE53T TLRME53T TLSE53T TLOE53T TLYE53T TLPYE53T TLGE53T TLFGE53T TLPGE53T Forward Current IF (mA) 50 50 50 50 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 120 120 120 120 -40~100 -40~120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) Electrical and Optical Characteristics (Ta = 25°C) Product Name TLRE53T TLRME53T TLSE53T TLOE53T TLYE53T TLPYE53T TLGE53T TLFGE53T TLPGE53T Unit Typ. Emission Wavelength ld 630 626 613 605 587 580 571 565 558 lP (644) (636) (623) (612) (590) (583) (574) (568) (562) nm Dl 20 23 20 20 17 14 17 15 14 IF 20 20 20 20 20 20 20 20 20 mA Luminous Intensity IV Min 153 272 272 272 272 153 153 85 47.6 mcd Typ. 400 600 800 1000 800 450 400 200 130 IF 20 20 20 20 20 20 20 20 20 mA Forward Voltage VF Typ. 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.1 V Max 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 IF 20 20 20 20 20 20 20 20 20 mA Reverse Current IR Max 50 50 50 50 50 50 50 50 50 mA VR 4 4 4 4 4 4 4 4 4 V Precautions · · · Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLRE53T IF – VF 100 Ta = 25°C 50 30 3000 Ta = 25°C 1000 IV – IF IF (mA) 10 Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 Forward current (mcd) 100 5 3 1 1.6 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 3 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLRME53T IF – VF 100 Ta = 25°C 50 30 3000 Ta = 25°C 1000 IV – IF IF (mA) 10 Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 Forward current (mcd) 100 5 3 1 1.6 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity -20 0 20 40 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 4 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLSE53T IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 560 580 600 620 640 660 680 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLOE53T IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLYE53T IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 7 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLPYE53T IF – VF 100 Ta = 25°C 50 30 3000 Ta = 25°C 1000 IV – IF IF (mA) 10 Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 Forward current (mcd) 100 5 3 10 5 1 10 100 1 1.6 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 -20 0 20 40 60 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 8 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLGE53T IF – VF 100 Ta = 25°C 50 30 5000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 Forward current 10 5 3 100 1 1.6 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 20 40 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 9 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLFGE53T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 (mcd) 100 10 3 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.4 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 10 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLPGE53T IF – VF 100 Ta = 25°C 50 30 1000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 10 1 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity -20 0 20 40 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8




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