InGaALP LED

TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TOSHIBA InGaAℓP LED TLRE50T,TLRME50T,TLSE50T,TLOE50T,TLYE50T, TLPYE50T,TLGE50T,TLFGE50T,TLPGE50T Panel Circuit Indicators Unit: mm · · · · · · · · φ3 mm package InGaAℓP technology All plastic mold type Transparent lens Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) High intensity light emission Excellent low current light output Applications: message boards, security devices and dashboard displays Line-up Product Name TLRE50T TLRME50T TLSE50T TLOE50T TLYE50T TLPYE50T TLGE50T TLFGE50T TLPGE50T Color Red Red Red Orange Yellow Pure Yellow Green Green Pure Green InGaAlP Material JEDEC JEITA TOSHIBA Weight: 0.14 g ― ― 4-3E1A 1 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T Maximum Ratings (Ta = 25°C) Product Name TLRE50T TLRME50T TLSE50T TLOE50T TLYE50T TLPYE50T TLGE50T TLFGE50T TLPGE50T Forward Current IF (mA) 50 50 50 50 50 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 4 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 120 120 120 120 120 -40~100 -40~120 Operating Temperature Topr (°C) Storage Temperature Tstg (°C) Electrical and Optical Characteristics (Ta = 25°C) Product Name TLRE50T TLRME50T TLSE50T TLOE50T TLYE50T TLPYE50T TLGE50T TLFGE50T TLPGE50T Unit Typ. Emission Wavelength ld 630 626 613 605 587 580 571 565 558 lP (644) (636) (623) (612) (590) (583) (574) (568) (562) nm Dl 20 23 20 20 17 14 17 15 14 IF 20 20 20 20 20 20 20 20 20 mA Luminous Intensity IV Min Typ. IF 850 850 1530 1530 1530 850 476 272 153 mcd 1800 2200 3500 4500 3500 2500 1500 1000 600 20 20 20 20 20 20 20 20 20 mA Forward Voltage VF Typ. Max IF 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.1 V 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 2.4 20 20 20 20 20 20 20 20 20 mA Reverse Current IR Max VR 50 50 50 50 50 50 50 50 50 mA 4 4 4 4 4 4 4 4 4 V Precautions · · · Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TLRE50T IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 3 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TLRME50T IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity -20 0 20 40 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 0 580 600 620 640 660 680 700 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 4 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TLSE50T IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 560 580 600 620 640 660 680 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TLOE50T IF – VF 100 Ta = 25°C 50 30 30000 Ta = 25°C 10000 IV – IF IF (mA) 10 Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 Forward current (mcd) 1000 5 3 1 1.6 100 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TLYE50T IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 3 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 1 0.6 0.5 0.3 0.4 0.2 0.1 20 40 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 7 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TLPYE50T IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 (mcd) 1000 100 20 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 -20 0 20 40 60 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 8 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TLGE50T IF – VF 100 Ta = 25°C 50 30 5000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 Forward current 10 5 3 100 1 1.6 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity -20 0 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 20 40 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 9 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TLFGE50T IF – VF 100 Ta = 25°C 50 30 5000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 Forward current 10 5 3 100 1 1.6 10 1 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.4 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 0 0.2 0.4 0.6 0.8 20 40 60 80 100 120 Ambient temperature Ta (°C) 10 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T TLPGE50T IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 2.3 1000 100 10 1 Forward current 10 5 3 1 1.6 10 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV 5 Ta = 25°C Relative luminous intensity -20 0 20 40 60 80 0.8 3 0.6 1 0.5 0.3 0.4 0.2 0.1 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern 80 IF – Ta (mA) Allowable forward current IF 60 40 60° 70° 80° 90° 1.0 20 0 0 Ta = 25°C 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50