InGaALP LED

TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TOSHIBA InGaAℓP LED TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP Panel Circuit Indicator Unit: mm · · · · · · · · · 5 mm package InGaAℓP technology All plastic mold type Transparent lens Line-up: 3 colors (pure green, green, pure yellow) High intensity light emission Excellent low current light output Stopper lead type is also available TLPGE23T, TLFGE23T, TLGE23T, TLPYE23T Applications: traffic signals, safety equipment, etc. Line-up Product Name TLPGE23TP TLFGE23TP TLGE23TP TLPYE23TP Color Pure Green Green Green Pure Yellow InGaAlP Material JEDEC JEITA TOSHIBA Weight: 0.31 g Operating Temperature Topr (°C) ― ― ― Maximum Ratings (Ta = 25°C) Product Name TLPGE23TP TLFGE23TP TLGE23TP TLPYE23TP Forward Current IF (mA) 50 50 50 50 Reverse Voltage VR (V) 4 4 4 4 Power Dissipation PD (mW) 120 120 120 120 Storage Temperature Tstg (°C) -40~100 -40~120 1 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP Electrical and Optical Characteristics (Ta = 25°C) Product Name Typ. Emission Wavelength ld TLPGE23TP TLFGE23TP TLGE23TP TLPYE23TP Unit 558 565 571 580 lP (562) (568) (574) (583) nm Dl 14 15 17 14 IF 20 20 20 20 mA Luminous Intensity IV Min 850 1530 2720 2720 Typ. 3000 5000 7000 8000 IF 20 20 20 20 mA Forward Voltage VF Typ. 2.1 2.0 2.0 2.0 V Max 2.4 2.4 2.4 2.4 IF 20 20 20 20 mA Reverse Current IR Max 50 50 50 50 mA VR 4 4 4 4 V mcd Precautions · · · Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TLPGE23TP IF – VF 100 Ta = 25°C 50 30 10000 Ta = 25°C IV – IF IF (mA) (mcd) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 3000 1000 Forward current 10 5 3 300 100 1 1.6 2.3 30 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 -20 0 20 40 60 80 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern (mA) Ta = 25°C 80 IF – Ta Allowable forward current IF 60 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 3 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TLFGE23TP IF – VF 100 Ta = 25°C 50 30 30000 Ta = 25°C 10000 IV – IF IF (mA) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 (mcd) 3000 Forward current 10 1000 5 3 300 1 1.6 2.3 100 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.4 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern (mA) Ta = 25°C 80 IF – Ta Allowable forward current IF 60 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 4 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TLGE23TP IF – VF 100 Ta = 25°C 50 30 30000 Ta = 25°C 10000 IV – IF IF (mA) Luminous intensity IV (mcd) 3000 Forward current 10 1000 5 3 300 1 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 100 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.4 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 0 520 540 560 580 600 620 640 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern (mA) Ta = 25°C 80 IF – Ta 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 Allowable forward current IF 60 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 5 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP TLPYE23TP IF – VF 100 Ta = 25°C 50 30 30000 Ta = 25°C 10000 IV – IF IF (mA) Luminous intensity IV 1.7 1.8 1.9 2.0 2.1 2.2 (mcd) 3000 Forward current 10 1000 5 3 300 1 1.6 2.3 100 1 3 5 10 30 50 100 Forward voltage VF (V) Forward current IF (mA) IV – Tc 10 1.0 Relative luminous intensity – Wavelength IF = 20 mA Relative luminous intensity IV Relative luminous intensity 5 3 Ta = 25°C 0.8 0.6 1 0.5 0.3 0.4 0.2 0.1 -20 0 20 40 60 80 0 540 560 580 600 620 640 660 Case temperature Tc (°C) Wavelength l (nm) Radiation pattern (mA) Ta = 25°C 80 IF – Ta Allowable forward current IF 60 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 40 20 0 0.2 0.4 0.6 0.8 0 0 20 40 60 80 100 120 Ambient temperature Ta (°C) 6 2002-01-18 TLPGE23TP,TLFGE23TP,TLGE23TP,TLPYE23TP RESTRICTIONS ON PRODUCT USE 000707EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-01-18