(TIP140 - TIP142) NPN SILICON POWER DARLINGTONS

TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with TIP145, TIP146 and TIP147 125 W at 25°C Case Temperature 10 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP140 Collector-base voltage (IE = 0) TIP141 TIP142 TIP140 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. TIP141 TIP142 VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IC = 30 mA (see Note 5) VCE = 30 V VCE = 40 V VCE = 50 V VCB = 60 V VCB = 80 V VCB = 100 V VEB = VCE = VCE = IB = IB = VCE = IE = 5V 4V 4V 10 mA 40 mA 4V 10 A IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 5A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 1000 500 2 3 3 3.5 V V V TEST CONDITIONS TIP140 IB = 0 TIP141 TIP142 TIP140 TIP141 TIP142 TIP140 TIP141 TIP142 MIN 60 80 100 2 2 2 1 1 1 2 mA mA mA V TYP MAX UNIT ICEO ICBO IEBO hFE V CE(sat) VBE VEC IC = 10 A IC = 5 A IC = 10 A IC = 10 A IB = 0 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25°C case temperature PARAMETER ton toff † TEST CONDITIONS IC = 10 A VBE(off) = -4.2 V IB(on) = 40 mA RL = 3 Ω † MIN IB(off) = -40 mA tp = 20 µs, dc ≤ 2% TYP 0.9 11 MAX UNIT µs µs Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 70000 TCS140AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 TCS140AB hFE - Typical DC Current Gain TC = -40°C TC = 25°C TC = 100°C 10000 1·0 1000 0·5 TC = -40°C TC = 25°C TC = 100°C 0 0·5 1·0 IC - Collector Current - A 10 20 VCE = 4 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 IC - Collector Current - A 10 20 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C 2·5 TC = 100°C TCS140AC 2·0 1·5 1·0 0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 1·0 IC - Collector Current - A 10 20 0 0·5 Figure 3. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS140AA IC - Collector Current - A 10 1·0 TIP140 TIP141 TIP142 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 140 Ptot - Maximum Power Dissipation - W TIS140AA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP