MICROWAVE POWER GaAs FET

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM6472-8UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two-Tone Test Po= 28.5dBm (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) SYMBOL P1dB CONDITIONS UNIT dBm MIN. 38.5 8.5    -44   TYP. MAX. 39.5 9.5 2.2  36 -47 2.2    2.6 ±0.6   2.6 80 f = 6.4 to 7.2GHz ηadd IM3 dBc A °C Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO CONDITIONS VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100µA UNIT mS V A V °C/W MIN.  -1.0  -5  TYP. MAX. 1800  -2.5 5.2  2.5 -4.0   3.5 Rth(c-c) Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM6472-8UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 °C) Channel Temperature Storage SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W °C °C RATING 15 -5 7.0 42.9 175 -65 to +175 PACKAGE OUTLINE (2-11D1B) 0.6±0.15 4-C1.2 4.0 MIN. Unit in mm (1) (1) Gate (2) Source 12.9±0.2 3.2±0.3 (2) (2) (3) Drain (3) 17±0.3 21±0.2 11.0 MAX. +0.1 0.1 -0.05 0.2 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 1.6±0.3 2.6±0.3 12 5.0 MAX. 4.0 MIN. TIM6472-8UL RF PERFORMANCE Output Power vs. Frequency 42 41 Po (dBm) 40 39 38 37 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 VDS= 10V IDS≅ 2.2A Pin= 30.0dBm Frequency (GHz) Output Power vs. Input Power 42 41 40 39 P o (dB m) 38 37 ƒÅadd 36 35 34 33 23 25 27 29 31 33 30 20 10 0 f= 6.8GHz VDS= 10V IDS≅ 2.2A 90 80 Po 70 60 50 40 ƒÅadd (%) P in ( dB m ) 3 TIM6472-8UL Power Dissipation vs. Case Temperature 50 40 30 PT (W) 20 10 0 0 40 80 Tc (•Ž ) 120 160 200 IM3 vs. Output Power Characteristics - 20 VDS= 10V IDS≅ 2.2A f= 6.8GHz ∆f= 5MHz - 30 IM3 (dBc) - 40 - 50 - 60 24 26 28 30 32 34 Po(dBm), Single Carrier Level 4