MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM3742-25UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion www.DataSheet4U.com SYMBOL P1dB G1dB IDS1 ∆G CONDITIONS UNIT dBm dB A dB % MIN. 43.5 9.5    -44   TYP. MAX. 44.5 10.5 6.8  38 -47 6.8    7.6 ±0.6   7.6 80 VDS= 10V f = 3.7 to 4.2GHz ηadd IM3 IDS2 ∆Tch Two-Tone Test Po=33.5dBm (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) dBc A °C Drain Current Channel Temperature Rise Recommended gate resistance(Rg) : Rg= 28 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 8.0A VDS= 3V IDS= 80mA VDS= 3V VGS= 0V IGS= -280µA Channel to Case UNIT mS V A V °C/W MIN.  -1.0  -5  TYP. 5000 -2.5 14.4  1.2 MAX.  -4.0   1.5 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM3742-25UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 °C) Channel Temperature Storage SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W °C °C RATING 15 -5 20.0 100 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.7±0.15 4 – C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) (3) 20.4±0.3 0.1 -0.05 24.5 MAX. 16.4 MAX. +0.1 2.5 MIN. 2.6±0.3 17.4±0.4 8.0±0.2 0.2 MAX. 1.4±0.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 2.4±0.3 5.5 MAX. TIM3742-25UL RF PERFORMANCE Output Power vs. Frequency 47 46 Po (dBm) 45 44 43 42 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 Frequency (GHz) VDS= 10V IDS≅ 6.8A Pin= 34.0dBm Output Power vs. Input Power 46 45 44 43 Po (dBm) 42 ƒÅ add 40 39 38 37 27 29 31 33 Pin (dBm) 35 37 30 20 10 0 ƒÅadd (% ) 41 40 f=3.95GHz VDS= 10V IDS≅ 6.8A 90 80 Po 70 60 50 3 TIM3742-25UL Power Dissipation vs. Case Temperature 120 100 80 PT (W ) 60 40 20 0 0 40 80 120 160 200 Tc (•Ž ) IM3 vs. Output Power Characteristics - 20 VDS= 10V IDS≅ 6.8A f= 3.95GHz ∆f= 5MHz - 30 IM3 (dBc) - 40 - 50 - 60 28 30 32 34 36 38 Po(dBm), Single Carrier Level 4