2 x 6 W stereo power amplifier

INTEGRATED CIRCUITS DATA SHEET TDA1517; TDA1517P 2 × 6 W stereo power amplifier Product specification Supersedes data of 1995 Dec 15 File under Integrated Circuits, IC01 1998 Apr 28 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier FEATURES • Requires very few external components • High output power • Fixed gain • Good ripple rejection • Mute/standby switch • AC and DC short-circuit safe to ground and VP • Thermally protected • Reverse polarity safe • Capability to handle high energy on outputs (VP = 0 V) • No switch-on/switch-off plop • Electrostatic discharge protection. QUICK REFERENCE DATA SYMBOL VP IORM Iq(tot) Isb Isw |ZI| Po SVRR αcs Gv Vno(rms) Tc PARAMETER supply voltage repetitive peak output current total quiescent current standby current switch-on current input impedance output power supply voltage ripple rejection channel separation closed loop voltage gain noise output voltage (RMS value) crystal temperature RL = 4 Ω; THD = 0.5% RL = 4 Ω; THD = 10% fi = 100 Hz to 10 kHz CONDITIONS − − − − 50 − − 48 40 19 − − TDA1517; TDA1517P GENERAL DESCRIPTION The TDA1517 is an integrated class-B dual output amplifier in a plastic single in-line medium power package with fin (SIL9MPF) and a plastic heat-dissipating dual in-line package (HDIP18). The device is primarily developed for multi-media applications. MIN. 6.0 − TYP. 14.4 40 0.1 − − 5 6 − − 20 50 − MAX. 18.0 2.5 80 100 40 − − − − − 21 − 150 UNIT V A mA µA µA kΩ W W dB dB dB µV °C ORDERING INFORMATION TYPE NUMBER TDA1517 TDA1517P PACKAGE NAME SIL9MPF HDIP18 DESCRIPTION plastic single in-line medium power package with fin; 9 leads plastic heat-dissipating dual in-line package; 18 leads VERSION SOT110-1 SOT398-1 1998 Apr 28 2 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier BLOCK DIAGRAM TDA1517; TDA1517P handbook, full pagewidth non-inverting input 1 1 60 kΩ mute switch Cm 4 VA 2 kΩ 18 kΩ power stage output 1 VP 8 stand-by switch VA 15 kΩ x1 supply voltage ripple rejection output 3 15 kΩ mute reference voltage 18 kΩ mute switch stand-by reference voltage mute/stand-by switch input TDA1517 2 kΩ non-inverting input 2 VA 9 60 kΩ input reference voltage mute switch signal ground 2 SGND 7 VP Cm power stage power ground 5 (substrate) MLC351 6 output 2 PGND Fig.1 Block diagram. 1998 Apr 28 3 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier PINNING SYMBOL −INV1 SGND SVRR OUT1 PGND OUT2 VP M/SS −INV2 PIN 1 2 3 4 5 6 7 8 9 non-inverting input 1 signal ground TDA1517; TDA1517P DESCRIPTION supply voltage ripple rejection output output 1 power ground output 2 supply voltage mute/standby switch input non-inverting input 2 ndbook, halfpage INV1 SGND SVRR OUT1 PGND OUT2 VP M/SS INV2 1 2 3 4 5 6 7 8 9 MLC352 ndbook, halfpage INV1 SGND SVRR OUT1 1 2 3 4 5 6 7 8 9 MLC353 18 17 16 15 TDA1517P 14 13 12 11 10 TDA1517 PGND OUT2 VP M/SS INV2 Pins 10 to 18 should be connected to GND or floating. Fig.2 Pin configuration for SOT110-1. Fig.3 Pin configuration for SOT398-1. FUNCTIONAL DESCRIPTION The TDA1517 contains two identical amplifiers with differential input stages. The gain of each amplifier is fixed at 20 dB. A special feature of the device is the mute/standby switch which has the following features: • Low standby current (<100 µA) • Low mute/standby switching current (low cost supply switch) • Mute condition. 1998 Apr 28 4 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP VP(sc) VP(r) ERGO IOSM IORM Ptot Tstg Tamb Tc PARAMETER supply voltage AC and DC short-circuit safe voltage reverse polarity energy handling capability at outputs non-repetitive peak output current repetitive peak output current total power dissipation storage temperature operating ambient temperature crystal temperature see Fig.4 VP = 0 V CONDITIONS TDA1517; TDA1517P MIN. − − − − − − − −55 −40 − MAX. 18 18 6 200 4 2.5 15 +150 +85 150 V V V UNIT mJ A A W °C °C °C THERMAL RESISTANCE SYMBOL Rth j-c Rth j-p Rth j-a TYPE NUMBER TDA1517 TDA1517P PARAMETER thermal resistance from junction to case thermal resistance from junction to pins 8 15 VALUE UNIT K/W K/W K/W TDA1517; TDA1517P thermal resistance from junction to ambient 50 handbook, halfpage 18 MLC354 P (W) 12 (1) (2) 6 0 25 0 50 100 150 o T amb ( C) (1) Rth j-c = 8 K/W. (2) Rth j-p = 15 K/W. Fig.4 Power derating curve. 1998 Apr 28 5 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measured in Fig.6; unless otherwise specified. SYMBOL Supply VP Iq(tot) VO V8 VO Isb Vsw Note supply voltage total quiescent current DC output voltage note 1 PARAMETER CONDITIONS TDA1517; TDA1517P MIN. TYP. MAX. UNIT 6.0 − − 14.4 40 6.95 − − − 12 18.0 80 − − V mA V Mute/standby switch switch-on voltage level see Fig.5 8.5 − − − V Mute condition output signal in mute position VI(max) = 1 V; fi = 20 Hz to 15 kHz 2 mV µA µA Standby condition DC current in standby condition switch-on current 100 40 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 1998 Apr 28 6 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier TDA1517; TDA1517P AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified. SYMBOL Po THD flr fhr Gv SVRR PARAMETER output power total harmonic distortion low frequency roll-off high frequency roll-off closed loop voltage gain supply voltage ripple rejection on mute standby |Zi| Vno input impedance noise output voltage on on mute αcs |∆Gv| Notes 1. Output power is measured directly at the output pins of the IC. 2. Frequency response externally fixed. 3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and a frequency between 100 Hz and 10 kHz. 4. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage independent of Rs (VI = 0 V). channel separation channel unbalance Rs = 0 Ω; note 4 Rs = 10 Ω; note 4 note 5 Rs = 10 Ω − − − 40 − 50 70 50 − 0.1 − 100 − − 1 µV µV µV dB dB note 3 48 48 80 50 − − − 60 − − − 75 dB dB dB kΩ CONDITIONS THD = 0.5%; note 1 THD = 10%; note 1 Po = 1 W at −3 dB; note 2 at −1 dB 4 5.5 − − 20 19 MIN. 5 6.0 0.1 45 − 20 TYP. − − − − − 21 MAX. UNIT W W % Hz kHz dB 1998 Apr 28 7 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier TDA1517; TDA1517P handbook, halfpage 18 V11 (V) 8.5 6.4 3.3 2 0 ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, MLC355 ON (IP = 40 mA) mute (IP = 40 mA) standby (I P 100 µA) Fig.5 Standby, mute and on conditions. APPLICATION INFORMATION handbook, full pagewidth standby switch 100 µF 3 input reference voltage internal 1/2 V P 8 7 VP 100 nF 2200 µF TDA1517 220 nF input 1 60 kΩ 1 20 dB 20 dB 60 kΩ 9 220 nF input 2 2 5 1000 µF 4 6 MLC356 signal ground power ground 1000 µF Fig.6 Application circuit diagram. 1998 Apr 28 8 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier PACKAGE OUTLINES SIL9MPF: plastic single in-line medium power package with fin; 9 leads TDA1517; TDA1517P SOT110-1 D D1 q P P1 A2 A3 q1 q2 A A4 seating plane E pin 1 index L 1 Z b2 e b b1 w M 9 Q c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT110-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A 18.5 17.8 A2 max. 3.7 A3 8.7 8.0 A4 15.8 15.4 b 1.40 1.14 b1 0.67 0.50 b2 1.40 1.14 c 0.48 0.38 D (1) 21.8 21.4 D1 21.4 20.7 E (1) 6.48 6.20 e 2.54 L 3.9 3.4 P 2.75 2.50 P1 3.4 3.2 Q 1.75 1.55 q 15.1 14.9 q1 4.4 4.2 q2 5.9 5.7 w 0.25 Z (1) max. 1.0 ISSUE DATE 92-11-17 95-02-25 1998 Apr 28 9 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier TDA1517; TDA1517P HDIP18: plastic heat-dissipating dual in-line package; 18 leads SOT398-1 D seating plane ME A2 A A1 L Z e b1 b b2 10 w M c (e 1) MH 18 pin 1 index E 1 9 0 5 scale 10 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.7 0.19 A1 min. 0.51 0.02 A2 max. 3.7 0.15 b 1.40 1.14 0.06 0.04 b1 0.67 0.50 0.03 0.02 b2 1.05 0.75 0.04 0.03 c 0.47 0.38 0.02 0.01 D (1) 21.85 21.35 0.87 0.84 E (1) 6.5 6.2 0.26 0.24 e 2.54 0.10 e1 7.62 0.30 L 3.9 3.1 0.15 0.12 ME 8.32 8.02 0.33 0.32 MH 8.7 7.7 0.34 0.30 w 0.25 0.01 Z (1) max. 1.0 0.04 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT398-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 94-04-13 95-01-25 1998 Apr 28 10 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact DEFINITIONS Data sheet status Objective specification Preliminary speci