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INTEGRATED CIRCUITS DATA SHEET TDA1515BQ 24 W BTL or 2 x 12 W stereo car radio power amplifier Product specification File under Integrated Circuits, IC01 July 1994 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio power amplifier TDA1515BQ The TDA1515BQ is a monolithic integrated class-B output amplifier in a 13-lead single in-line (SIL) plastic power package. The device is primarily developed for car radio applications, and also to drive low-impedance loads (down to 1,6 Ω). At a supply voltage VP = 14,4 V, an output power of 24 W can be delivered into a 4 Ω BTL (Bridge Tied Load), or, when used as stereo amplifier, it delivers 2 × 12 W into 2 Ω or 2 × 7 W into 4 Ω. Special features are: • flexibility in use − mono BTL as well as stereo • high output power • low offset voltage at the output (important for BTL) • large usable gain variation • very good ripple rejection • internal limited bandwidth for high frequencies • low stand-by current possibility (typ. 1 µA), to simplify required switches; TTL drive possible • low number and small sized external components • high reliability. The following currently required protections are incorporated in the circuit. These protections also have positive influence on reliability in the applications. • load dump protection • a.c. and d.c. short-circuit safe to ground up to VP = 18 V • thermal protection • speaker protection in bridge configuration • SOAR protection • outputs short-circuit safe to ground in BTL • reverse polarity safe. July 1994 2 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio power amplifier QUICK REFERENCE DATA Supply voltage range (operating) Supply voltage (non-operating) Supply voltage (non-operating; load dump protection) Repetitive peak output current Total quiescent current Stand-by current Switch-on current Input impedance Bridge tied load application (BTL) Output power at RL = 4 Ω (with bootstrap) dtot = 0,5% dtot = 10% Supply voltage ripple rejection; RS = 0 Ω; f = 100 Hz D.C. output offset voltage between the outputs Stereo application Output power at dtot = 10% (with bootstrap) RL = 4 Ω RL = 2 Ω Output power at dtot = 0,5% (with bootstrap) RL = 4 Ω RL = 2 Ω Channel separation Noise output voltage; RS = 10 kΩ; according to IEC curve-A PACKAGE OUTLINE 13-lead SIL-bent-to-DIL; plastic power (SOT141C); SOT141-6; 1996 July 19. Po Po α Vn typ. typ. > typ. 5,5 9 40 0,2 Po Po typ. typ. 7 12 Po Po RR |∆V5-9| typ. typ. typ. < 18 24 50 50 VP VP VP IORM Itot Isb Iso |Zi| VP max. max. max. typ. typ. < > = 14,4 TDA1515BQ 6 to 18 V 28 V 45 V 4 A 75 mA 1 µA 100 µA 1 MΩ 13,2 V 15 W 20 W 50 dB 50 mV 6 W 10 W 4,5 W 7,5 W 40 dB 0,2 mV July 1994 3 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio power amplifier TDA1515BQ Fig.1 Internal block diagram; the heavy lines indicate the signal paths. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Supply voltage; operating (pin 10) Supply voltage; non-operating Supply voltage; during 50 ms (load dump protection) Peak output current Total power dissipation Storage temperature range Crystal temperature A.C. and d.c. short-circuit safe voltage Reverse polarity VP VP VP IOM Tstg Tc max. max. max. max. 18 V 28 V 45 V 6A see derating curve Fig.2 −55 to + 150 °C max. max. max. 150 °C 18 V 10 V July 1994 4 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio power amplifier TDA1515BQ Fig.2 Power derating curves. HEATSINK DESIGN EXAMPLE The derating of 3 K/W of the encapsulation requires the following external heatsink (for sine-wave drive): 24 W BTL (4 Ω) or 2 × 12 W stereo (2 Ω) maximum sine-wave dissipation: 12 W Tamb = 65 °C maximum 150 – 65 R th h-a = --------------------- = – 3 = 4 K/W 12 2 × 7 W stereo (4 Ω) maximum sine-wave dissipation: 6 W Tamb = 65 °C maximum 150 – 65 R th h-a = --------------------- = – 3 = 11 K/W 6 July 1994 5 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio power amplifier D.C. CHARACTERISTICS Supply voltage range (pin 10) Repetitive peak output current Total quiescent current Switching level 11: OFF ON Impedance between pins 10 and 6; 10 and 8 (stand-by position V11 < 1,8 V) Stand-by current at V11 = 0 to 0,8 V Switch-on current (pin 11) at V11 ≤ V10 (note 1) VP IORM Itot V11 V11 |ZOFF| Isb Iso < typ. < > > typ. < typ. < TDA1515BQ 6 to 18 V 4A 75 mA 1,8 V 3V 100 kΩ 1 µA 100 µA 10 µA 100 µA A.C. CHARACTERISTICS Tamb = 25 °C; VP = 14,4 V; f = 1 kHz; unless otherwise specified Bridge tied load application (BTL); see Fig.3 Output power at RL = 4 Ω (with bootstrap) VP = 14,4 V; dtot = 0,5% VP = 14,4 V; dtot = 10% VP = 13,2 V; dtot = 0,5% VP = 13,2 V; dtot = 10% Open loop voltage gain Closed loop voltage gain (note 2) Output power without bootstrap (note 9) VP = 14,4 V; dtot = 10% VP = 14,4 V; dtot = 0,5% VP = 13,2 V; dtot = 10% VP = 13,2 V; dtot = 0,5% Frequency response at −3 dB (note 3) Input impedance (note 4) Noise input voltage (r.m.s. value) at f = 20 Hz to 20 kHz RS = 0 Ω RS = 10 kΩ RS = 10 kΩ; according to IEC 179 curve A Supply voltage ripple rejection (note 5) f = 100 Hz RR > typ. 42 dB 50 dB Vn(rms) Vn(rms) Vn typ. typ. < typ. 0,2 mV 0,35 mV 0,8 mV 0,25 mV Po Po Po Po B |Zi| > typ. typ. typ. typ. 15 W 12 W 12 W 9 W 20 Hz to min. 20 kHz 1 MΩ Po Po Po Po Go Gc > typ. > typ. typ. typ. typ. typ. 15,5 W 18 W 20 W 24 W 15 W 20 W 75 dB 40 (± 0,5) dB July 1994 6 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio power amplifier D.C. output offset voltage between the outputs Loudspeaker protection (all conditions) maximum d.c. voltage (across the load) Power bandwidth; −1 dB; dtot = 0,5% Stereo application; see Fig.4 Output power at dtot = 10%; with bootstrap (note 6) VP = 14,4 V; RL = 4 Ω VP = 14,4 V; RL = 2 Ω VP = 13,2 V; RL = 4 Ω VP = 13,2 V; RL = 2 Ω Output power at dtot = 0,5%; with bootstrap (note 6) VP = 14,4 V; RL = 4 Ω VP = 14,4 V; RL = 2 Ω VP = 13,2 V; RL = 4 Ω VP = 13,2 V; RL = 2 Ω Output power at dtot = 10%; without bootstrap VP = 14,4 V; RL = 4 Ω (notes 6, 8 and 9) Frequency response at −3 dB (note 3) Supply voltage ripple rejection (note 5) Channel separation; RS = 10 kΩ; f = 1 kHz Closed loop voltage gain (note 7) Noise output voltage (r.m.s. value) at f = 20 Hz to 20 kHz RS = 0 Ω RS = 10 kΩ RS = 10 kΩ; according to IEC 179 curve A Notes 1. The internal circuit impedance at pin 11 is > 5 kΩ if V11 > V10. Vn(rms) Vn(rms) Vn typ. typ. typ. Po B RR α Gc typ. > typ. typ. typ. Po Po Po Po typ. typ. typ. typ. Po Po Po Po > typ. > typ. typ. typ. |∆V5-9| B < |∆V5-9| < typ. TDA1515BQ 50 mV 2 mV 1 V 30 Hz to 40 kHz 6 W 7 W 10 W 12 W 6 W 10 W 5,5 W 9 W 4,5 W 7,5 W 6 W 40 Hz to min. 20 kHz 50 dB 40 dB 50 dB 40 dB 0,15 mV 0,25 mV 0,2 mV 2. Closed loop voltage gain can be chosen between 32 and 56 dB (BTL), and is determined by external components. For further gain reduction see Application Report. 3. Frequency response externally fixed. 4. The input impedance in the test circuit (Fig.3) is typ. 100 kΩ. 5. Supply voltage ripple rejection measured with a source impedance of 0 Ω (maximum ripple amplitude: 2 V). 6. Output power is measured directly at the output pins of the IC. 7. Closed loop voltage gain can be chosen between 26 and 50 dB (stereo), and is determined by external components. 8. A resistor of 56 kΩ between pins 3 and 7 to reach symmetrical clipping. 9. Without bootstrap the 100 µF capacitor between pins 5 and 6 (8 and 9) can be omitted. Pins 6, 8 and 10 have to be interconnected. July 1994 7 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio power amplifier TDA1515BQ (1) Belongs to power supply. Fig.3 Test/application circuit bridge tied load (BTL). handbook, full pagewidth 100 kΩ 100 kΩ 47 µF stand-by switch VP 0.1 µF 4 3 11 10 12 (1) 2 0.1 µF 1 TDA1515BQ 6 5 9 8 7 13 0.1 µF 100 kΩ 100 µF 100 µF 100 kΩ 1 kΩ 10 µF 0.1 µF 4.7 Ω 1 mF RL 1 mF RL 0.1 µF 4.7 Ω 1 kΩ 10 µF MLA320 - 1 (1) Belongs to power supply. Fig.4 Test/application circuit stereo. July 1994 8 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio power amplifier PACKAGE OUTLINE DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) TDA1515BQ SOT141-6 non-concave x D Dh Eh view B: mounting base side d A2 B j E A L3 L Q c v M 1 Z e e1 bp w M 13 m e2 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 17.0 15.5 A2 4.6 4.2 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 3.4 e1 1.7 e2 5.08 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.25 x 0.03 Z (1) 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT141-6 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 95-03-11 97-12-16 July 1994 9 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio power amplifier SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint fo

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